ST DARLINGTON TRANSISTOR Search Results

BDW42

Contextual Info: ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose and Low Speed Switching Application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage

BDW47

Contextual Info: ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage

BDW47

Contextual Info: ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage

BDW42

Contextual Info: ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose and Low Speed Switching Application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage

BDW47

Contextual Info: ST BDW47 PNP Silicon Planar Darlington Power Transistor General Purpose Application and Low Speed Switching TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V

BDW42

Contextual Info: ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose and Low Speed Switching Application TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage VCBO 100 V

BDW42

Contextual Info: ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose Application and Low Speed Switching TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage VCBO 100 V

BDW47

Contextual Info: ST BDW47 PNP Silicon Planar Darlington Power Transistor General Purpose Application and Low Speed Switching TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V

BDW47

Contextual Info: ST BDW47 PNP Silicon Planar Darlington Power Transistor General Purpose and Low Speed Switching Application TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V

BDW42

Contextual Info: ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose Application and Low Speed Switching TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage VCBO 100 V

4410b

Abstract: 2n6043 2N6044 2N6045
Contextual Info: 3875081 G E SOLID ST ATE 01 d F Ï 3Û7SDÔ1 DQlVEEb b T d Darlingion Power Transistors ;_ 5 _ T- J J 5 _ File Number 1151 2N6043, 2N6044, 2N6045 TERMINAL DESIGNATIONS 8-Ampere N-P-N Darlington Power Transistors

diode e106

Abstract: tipl 750 TIPL785A
Contextual Info: TEXAS INSTR -£OPTO> bE Ï F | flìblTEh GD37113 fi |~~ T -3 3 -2 9 Ö961726 TEXAS IN ST R 62C_37113 COPTO TIPL785, TIPL785A, TIPL790;TIPL790A N-P-N MONOLITHIC DARLINGTON CONNECTED SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 • Rugged Epitaxial Planar Construction

T1P112

Contextual Info: b2 TE XA S IN ST R -COPTO} DE? ûlfcilTEb DG3bflfl2 t. 89 61726 TEXAS INSTR <OPTO) 62C 36882 TIPT10, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed for Complementary Use With T IP 115, T IP 116, T IP 117

VQC10

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 IS SU E 2 - SEPTEM BER 1995 FEA TU RES * 2A CONTINUOUS CURRENT * FA ST SW ITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COM PLEM ENTARY TYPE - FZT604 PART MARKING D ETAIL FZT704 •= ABSOLUTE MAXIMUM RATINGS.

KD524503

Abstract: KD524S03
Contextual Info: BTE D POtilEREX INC • TSTMbEl GD0m3b □ H P R X ' - ' 3 3 - 3 ST mNEREX KD524503 Powerex, Inc., HIIUs Street, Voungwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual Darlington

PS2002B

Abstract: PS2002 transistor replacement 0z99
Contextual Info: NEC PHOTO COUPLER BfCTRON OEVICE PS2002B PHOTO CO U PLER IN D U ST R IA L U SE -N EP O C SERIES - DESCRIPTION The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon darlington- connect­ ed phototransistor.

TA8349

Abstract: 2N6383 RCA TA8348 2N6384 2N6385 RCA 2n6385 2N6384 RCA
Contextual Info: 3875081 G E SOLID ST AT E 01 1 > F | 3Ô7S0Û1 0G17243 fi File Number 609 ¿ y -*? 2N6383, 2N6384, 2N6385 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS c Features: • ■ {FLANGE I Operates from 1C w ithout predriver

D1499

Abstract: emitter phototransistor til 31 TIL119A TIL113 TL113
Contextual Info: TIL113, TIL119A OPTOCOUPLERS D 1 4 9 9 , AU G U ST 1 9 8 1 -R E V IS E D JUNE 1989 Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Darlington-Connected Phototransistor High Direct-Current Transfer Ratio . . . 300% Minimum at 10 mA

2SB1093

Abstract: 04 ow
Contextual Info: SEC l i T / '> 1J =1 > h Si l i con Tr ansi st or i i O 2SB1093 PNPx t a > '> * .? PNP Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching ftW m / P A C K A G E DIMENSIONS 2 S B 1 0 9 3 iin ij > h y Y ÿ y ì? x 9 -e,

TIP665

Abstract: 2N6128 TIP663 TIP664 tip66 TIP6 P66S
Contextual Info: TEXAS IN ST R hS -COPTO} 8961726 TEXAS I NSTR D lf| □ □ 3 b cl ci 0 COPTO 62C 3 6 9 9 0 D TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONIMECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1 9 8 4 • 15 0 W at 1 0 0 °C Case Temperature T-33-29 2 0 A Continuous Collector Current

Contextual Info: TOSHIBA MP4513 TOSHIBA PO W ER TRANSISTOR M ODULE as 1 3 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M P •v ■ ■ ■ v ■ mm HIGH PO W ER SWITCHING APPLICATIONS. IN D U ST R IA L A PPLIC A TIO N S U nit in mm HAM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD

Contextual Info: TEX A S IN S T R -COPTO} bE 8961726 TEXAS De | f l i b l T a t IN ST R OPTO □□37Dcic1 T 62C 3 7 0 9 9 TIPL775, TIPL775A N-P-f\l MONOLITHIC DARLINGTON-CONNECTED SILICON POWER TRANSISTORS OCTOBER 1982 - R EV ISED O CTOBER 1984 T ^ 3 3 — 29^ Specifically Designed For Low-Loss, High-Current, High-Speed

Contextual Info: h ~ 7 > y Z 5 t / Tr ansi st or s 2SD1647 2SD1647 NPN y 'J b> ' JI>j£ii:fritlliffl/Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • a S4 SI V 'A 'd l-r • ^ i-J f^ ^ H /D im e n s io n s U n it: mm : — x falic 60 V co " j x 1~

TT 2076

Abstract: UDN2841 UDN2845 PNP DARLINGTON SINK DRIVER 7626S
Contextual Info: TEXAS INSTR -CLIN/IN TFO il 8961724 TEXAS INSTR d ËT| LIN/INTFC 0^17214 0075130 9 1 D 75938 UD N 2 B 41, UDN2845 Q U AD R U PLE HIGH-CURRENT DARLINGTON DRIVERS D 2 5 0 7 , DECEM BER 1 9 8 0 - R E V IS E 0 A U G U ST 1986 • For Use with Negative Supplies