SSSMINI3-F1 TRANSISTOR Search Results

SSSMINI3-F1 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

SSSMINI3-F1 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40)	Original	2002/95/EC) 2SC5846	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40)	Original	2002/95/EC) 2SC5846	PDF
2SC5846 Contextual Info: Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 2 0.15 min. 1 0.23+0.05 –0.02 0.40 (0.40) 0.80±0.05 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C	Original	2SC5846 2SC5846	PDF
2SC5846G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type For general amplification • Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the	Original	2002/95/EC) 2SC5846G 2SC5846G	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package ■ Features • Code SSSMini3-F1	Original	2002/95/EC) 2SK3372	PDF
2SC5846 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02	Original	2002/95/EC) 2SC5846 2SC5846	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type For general amplification • Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the	Original	2002/95/EC) 2SC5846G	PDF
2SC5846G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package • High forward current transfer ratio hFE	Original	2002/95/EC) 2SC5846G 2SC5846G	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3426 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package ■ Features • Code SSSMini3-F1	Original	2002/95/EC) 2SK3426	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 di p Pl lan nclu ea e se pla m d m des	Original	2002/95/EC) 2SC5846	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type For general amplification • Features ■ Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the	Original	2002/95/EC) 2SC5846G	PDF
2x062h Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1	Original	ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062	PDF