SSR -60 DD Search Results

Application Note 60

Abstract: spice model TRIAC OUTPUT OPTOCOUPLER phototransistor spice model phototriac Spice sSR spice model spice model solid state relay IN5235 mosfet dc switch arcing spice model exercise "P-Channel JFET"
Contextual Info: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers Application Note 60 SSR Design Using VO1263 INTRODUCTION A solid state relay SSR is a semiconductor device that can be used in place of a mechanical relay in many applications to switch electricity to a load. SSRs are purely electronic and

Contextual Info: SSR/U3055A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.15 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

SSR -25 DD

Contextual Info: SSR/U3055A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.15 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

MOSFET SSR

Contextual Info: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

Contextual Info: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

SSR -100 DD

Contextual Info: SSR/U3055LA 60 V ^ D S o n = 0 .1 • Logic-Level Gate Drive ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10|iA (M ax.) @ VDS = 60V

DD404

Abstract: SSR SYMBOL
Contextual Info: SSR/U3055A A d van ced Power MOSFET FEATURES 60 V 0.15ß Avalanche Rugged Technology • Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA (Max.) @ V DS = 60V

Contextual Info: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

Contextual Info: SSR/U3055A FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 60 V ^ D S o n = 0 .1 5 ft o II ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (M ax.) @ V DS = 60V

Contextual Info: TO SH IB A TSS5G45S, TSS5J45S TOSHIBA SOLID STATE AC RELAY • v mm v ■ v mmr g m wmr mmr wmr v ■ v v OPTICALLY ISOLATED, ZERO VOLTAGE TURN-ON, ZERO CURRENT TURN-OFF, NORMALLY OPEN SSR U nit in mm fi?n 2-^35 COMPUTER PERIPHERALS MACHINE TOOL CONTROLS DDArCCC

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA-SI 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

7A SF

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA-SI 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

7A SF

Abstract: EDD2516KCTA
Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

SSR -25 DD

Abstract: SSR -100 DD 48 VDC voltage regulator 861HSSR SSR -40 DD mosfet current limiter E317746
Contextual Info: R e l a y s S t a t e 861H Class 1, Division 2 Certified Solid State Relay GENERAL SPECIFICATIONS File No. E317746 www.magnecraft.com Class 1, Division 2 certification for use in hazardous locations IEC 60947-1 Output Characteristics 861HSSR*-DD 861HSSR*-AC-1

Contextual Info: IL329 SIEMENS Optically Coupled Telecom Switch Preliminary Data Sheet FEATURES • Solid state relay and AC input • Optocoupler Package— Single 18 Pin • I/O Isolation, 2500 VRMS • Surface Mountable • Optocoupler - Bidirectional C urrent Detection

Solid State Relays

Abstract: 8501CT1002 A 3150 V schneider overload relay WIRING DIAGRAM SSR -60 DD Triac AC INRUSH CURRENT LIMITER 70S2-01-A-03-V SSR220DIN-AC22 semiconductors cross reference Triac INRUSH CURRENT LIMITER
Contextual Info: Magnecraft Solid State Relays Catalog 2010 Contents Magnecraft® Solid State Relays „„ Series

SSR -100 DD

Abstract: SSR -25 DD SSR -60 DD IGBT SSR ac ssr SSR -40 DD SSR G THYRISTOR H 1500 three phase motor h brige reversing ssr
Contextual Info: Type Designation Solid State Relay Thyristor/Diode SMTC1-1500F-16-LGD12 SM - Sempo trademark T - thyristor-thyristor module; D - diode-diode module; A - semiconductors A series; C - semiconductors C series; - group of repetitive peak off-state and reverse voltage:

Contextual Info: Ramp/Soak Temperature/ Process Controller with Fuzzy Logic Model CN3251-R $ 410 Shown ߜ Dual PID + Fuzzy Logic Control ߜ Up to Five Outputs– Control, Alarm or Event ߜ Universal Sensor Input ߜ Switching Power Supply 100 to240 Vac or Optional 12 to 24 Vac/Vdc

ASX 12 D transistor

Abstract: Grayhill 70s2-04-c-03-v transistor dtx 360 mosfet transistor dtx 360 mosfet dtx 360 S505-0SJ625-000 GORDOS SOLID STATE RELAY gordos relay all mosfet dtx 360 ssr grayhill
Contextual Info: Your Contact for Relays SECTION SOLID STATE RELAYS SSR 2.5 TO 125 AMPERES 2 SOLID STATE RELAYS 6 (ASX) SSRDIN 6 (DSX) RELAY SERIES L.E.D. STATUS LAMP FEATURES L W H 2.25 x 1.75 x 0.78 L W H 4.015 x 1.180 x 4.527 AC & DC INPUT AC INPUT L W H 2.25 x 1.75 x 0.78

LH1514

Abstract: DC solid state relay ssr diagram LH1514AAC LH1514AB led and photodiode pair
Contextual Info: A T & T M l '.EC I C b4E D m OOSOO^b ODOROSO b2b •AT T E ! Preliminary Data Sheet É ^ A T gT ■— —• Microelectronics LH1514 — 2 Form A, High-Frequency Solid-State Relay Features Parameter Load Voltage Load Current Typical R o n Description

Contextual Info: SSR/U3055LA Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance o ■ ^ D S o n = II Avalanche Rugged Technology ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■ Lower RDS(ON) : 00 ■ 0.1

LH1514

Abstract: solid-state DRIVE ACCESS CONTROL
Contextual Info: A T & T Mi''.EC I C L4E D • 005002b 000^050 b2b MA TT E! Preliminary Data Sheet = ' = ? Microelectronics LH1514 — 2 Form A, High-Frequency Solid-State Relay Features Parameter Load Voltage Load Current Typical R on Description LH1514 15 150 5 Units

Contextual Info: SSR/Ü3055A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 6 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ Lower RDS{0N) : 0.097 £2 (Typ.)