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    SSM6N7002 Price and Stock

    Toshiba America Electronic Components SSM6N7002BFU,LF

    MOSFET 2N-CH 60V 0.2A US6
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    SSM6N7002BFU,LF Digi-Reel 1
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    Toshiba America Electronic Components SSM6N7002BFU(T5L,F

    MOSFET 2N-CH 60V 0.2A US6
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    SSM6N7002BFU(T5L,F Digi-Reel 1
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    Toshiba America Electronic Components SSM6N7002BFU(LTFT

    Transistor MOSFET Array Dual N-CH 60V 200mA 6-Pin SOT-363 Emboss T/R - Tape and Reel (Alt: SSM6N7002BFU(LT,FT)
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    Avnet Americas SSM6N7002BFU(LTFT Reel 3,000
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    Toshiba America Electronic Components SSM6N7002KFU

    MOSFET Array, Dual N Channel, 60 V, 300 mA, 1.5 Ohm, SOT-363, 6 Pins - Tape and Reel (Alt: SSM6N7002KFU,LF)
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    Avnet Americas SSM6N7002KFU Reel 20 Weeks 3,000
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    SSM6N7002KFU Reel 36 Weeks 3,000
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    Vyrian SSM6N7002KFU 2,276
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    Toshiba America Electronic Components SSM6N7002FU(TE85LF

    Transistor MOSFET Array Dual N-CH 60V 200mA 6-Pin SOT-363 Emboss T/R - Tape and Reel (Alt: SSM6N7002FUTE85LF)
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    Avnet Americas SSM6N7002FU(TE85LF Reel 3,000
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    EBV Elektronik SSM6N7002FU(TE85LF 143 Weeks 3,000
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    Find more SSM6N7002 price and stock on Findchips.com

    SSM6N7002 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM6N7002BFE Toshiba Japanese - Transistors - Mosfets Original PDF
    SSM6N7002BFE Toshiba Transistors - Mosfets Original PDF
    SSM6N7002BFE,LM Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 60V 0.2A ES6 Original PDF
    SSM6N7002BFE(T5L,F Toshiba FETs - Arrays, Discrete Semiconductor Products, MOSFET DUAL N-CH 60V .2A ES6 Original PDF
    SSM6N7002BFU Toshiba Transistors - Mosfets Original PDF
    SSM6N7002BFU Toshiba Japanese - Transistors - Mosfets Original PDF
    SSM6N7002BFU,LF Toshiba SSM6N7002BFU - X34 PB-F US6 S-MOS (LF) TRANSISTOR PD: 0.3W F: 1MHZ Original PDF
    SSM6N7002BFU(T5L,F Toshiba FETs - Arrays, Discrete Semiconductor Products, MOSFET DUAL N-CH 60V .2A US6 Original PDF
    SSM6N7002CFU,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 60V 0.17A US6 Original PDF
    SSM6N7002FU Toshiba Dual Silicon N-Channel MOSFET Original PDF
    SSM6N7002FU(TE85LF Toshiba SSM6N7002FU - Trans MOSFET N-CH 60V 0.2A 6-Pin US T/R Original PDF
    SSM6N7002FU(TE85LF) Toshiba FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CHANNEL 60V US6 Original PDF
    SSM6N7002KFU,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 60V 0.3A Original PDF
    SSM6N7002KFU,LXH Toshiba America Electronic Components SMOS 2 IN 1 DUAL NCH HIGH ESD PR Original PDF

    SSM6N7002 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SSM6N7002AFU

    Abstract: No abstract text available
    Text: SSM6N7002AFU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM6N7002AFU 高速スイッチング用 アナログスイッチ用 単位: mm 2.1±0.1 1 6 2 5 3 4 記 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧 VDS 60


    Original     		SSM6N7002AFU SSM6N7002AFU PDF

    SSM6N7002BFU

    Abstract: No abstract text available
    Text: SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOSⅣ SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm 2.1±0.1 • Small package • Low ON-resistance 1.25±0.1 Rating Unit Drain-source voltage


    Original     		SSM6N7002BFU SSM6N7002BFU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)


    Original     		SSM6N7002FU PDF

    SSM6N7002FU

    Abstract: No abstract text available
    Text: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)


    Original     		SSM6N7002FU SSM6N7002FU PDF

    SSM6N7002FU

    Abstract: No abstract text available
    Text: SSM6N7002FU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM6N7002FU 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 3.3 Ω 最大 (@VGS = 4.5 V)


    Original     		SSM6N7002FU 32mm2 SSM6N7002FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)


    Original     		SSM6N7002FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOSⅣ SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm 2.1±0.1 • Small package • Low ON-resistance 1.25±0.1 Rating Unit Drain-source voltage


    Original     		SSM6N7002BFU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOS SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm 1.6±0.05 • Small package • Low ON-resistance 1.2±0.05 Symbol Rating Unit Drain-source voltage


    Original     		SSM6N7002BFE PDF

    SSM6N7002BFU

    Abstract: No abstract text available
    Text: SSM6N7002BFU 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ SSM6N7002BFU 高速スイッチング アナログスイッチ 単位: mm 2.1±0.1 • 小型パッケージで高密度実装に最適 • オン抵抗が低い 1.25±0.1


    Original     		SSM6N7002BFU 32mm2 SSM6N7002BFU PDF

    SSM6N7002BFU

    Abstract: No abstract text available
    Text: SSM6N7002BFU 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ SSM6N7002BFU 高速スイッチング アナログスイッチ 単位: mm 2.1±0.1 • 小型パッケージで高密度実装に最適 • オン抵抗が低い 1.25±0.1


    Original     		SSM6N7002BFU 32mm2 SSM6N7002BFU PDF

    SSM6N7002BFE

    Abstract: No abstract text available
    Text: SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOSⅣ SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm 1.6±0.05 1.2±0.05 Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) 1.6±0.05 : RDS(ON) = 2.6 Ω (max) (@VGS = 5 V)


    Original     		SSM6N7002BFE SSM6N7002BFE PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)


    Original     		SSM6N7002FU PDF

    SSM6N7002AFU

    Abstract: No abstract text available
    Text: SSM6N7002AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002AFU High-Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON-resistance: RDS ON = 3.3 Ω (max) (@VGS = 4.5 V) 2.1±0.1 1.25±0.1 Symbol


    Original     		SSM6N7002AFU SSM6N7002AFU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)


    Original     		SSM6N7002FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N7002AFU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM6N7002AFU 高速スイッチング用 アナログスイッチ用 単位: mm 2.1±0.1 1 6 2 5 3 4 記 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧 VDS 60


    Original     		SSM6N7002AFU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOSⅣ SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm 1.6±0.05 1.2±0.05 Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) 1.6±0.05 : RDS(ON) = 2.6 Ω (max) (@VGS = 5 V)


    Original     		SSM6N7002BFE PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOS SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm 2.1±0.1 • Small package • Low ON-resistance 1.25±0.1 Rating Unit Drain-source voltage


    Original     		SSM6N7002BFU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)


    Original     		SSM6N7002FU PDF

    SSM6N7002BFE

    Abstract: No abstract text available
    Text: SSM6N7002BFE 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ SSM6N7002BFE 高速スイッチング アナログスイッチ 単位: mm 1.6±0.05 • 小型パッケージで高密度実装に最適 • オン抵抗が低い 1.2±0.05


    Original     		SSM6N7002BFE SSM6N7002BFE PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    SN0608098

    Abstract: schematic lcd inverter dell BQ70a EMC4002 LA-4041P B30 C350 mec5035 ECE5028 5 pin vga camera pinout suyin sn060809
    Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : JAL20 PCB NO : LA-4041P DA800009Y1L BOM NO : 43153231L01(TPM) 43153231L02 (Non TPM) 1 M09 Maybach UMA uFCPGA Mobile Penryn Intel Cantiga GM + ICH9M 2 2 2008-06-16 REV : 1.0(A00) @ : Nopop Component 3@ : disable TPM


    Original     		JAL20 LA-4041P DA800009Y1L) 43153231L01 43153231L02 DA800009Y1L LA-4041P SD03415830L SD03415838L ADP3209 SN0608098 schematic lcd inverter dell BQ70a EMC4002 B30 C350 mec5035 ECE5028 5 pin vga camera pinout suyin sn060809 PDF

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


    Original     		3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T PDF