SSM3K03TE
Abstract: No abstract text available
Text: SSM3K03TE 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K03TE ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 1.2±0.05 : Vth = 0.7~1.3 V スイッチング速度が速い。 • 小型パッケージで高密度実装に最適。
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SSM3K03TE
0022g
SSM3K03TE
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SSM3K03FE
Abstract: No abstract text available
Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm
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SSM3K03FE
2003-03-27transportation
SSM3K03FE
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2SA1955
Abstract: HN7G01FE SSM3K03FE
Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)
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HN7G01FE
2SA1955
SSM3K03FE
HN7G01FE
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Untitled
Abstract: No abstract text available
Text: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications • Low gate threshold voltage: Vth = 0.7~1.3 V • Optimum for high-density mounting in small packages Unit Drain-source voltage
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SSM3K03FV
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Untitled
Abstract: No abstract text available
Text: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics １ ２ ３ 0.59±0.05
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SSM3K03TE
0022g
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Untitled
Abstract: No abstract text available
Text: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications • Low gate threshold voltage: Vth = 0.7 to 1.3 V • Optimum for high-density mounting in small packages Unit Drain-source voltage
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SSM3K03FV
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HN7G02FE
Abstract: RN2110 SSM3K03FE
Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent
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HN7G02FE
RN2110
SSM3K03FE
HN7G02FE
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2SA1955
Abstract: HN7G01FE SSM3K03FE
Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)
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HN7G01FE
2SA1955
SSM3K03FE
HN7G01FE
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SSM3K03FV
Abstract: VESM
Text: SSM3K03FV 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K03FV ○ 高速スイッチング用 ○ アナログスイッチ用 : Vth = 0.7~1.3 V • スイッチング速度が速い。 • 小型パッケージで高密度実装に最適。
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SSM3K03FV
0015g
SSM3K03FV
VESM
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SSM3K03TE
Abstract: No abstract text available
Text: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics Symbol Rating Unit
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SSM3K03TE
SSM3K03TE
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SSM3K03FE
Abstract: No abstract text available
Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive · High input impedance · Low gate threshold voltage: Vth = 0.7~1.3 V · Small package Unit: mm
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SSM3K03FE
2003-03-27transportation
SSM3K03FE
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Untitled
Abstract: No abstract text available
Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm
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SSM3K03FE
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Untitled
Abstract: No abstract text available
Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)
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HN7G10FE
2SC5376F
SSM3K03FE
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2SC5376F
Abstract: HN7G10FE SSM3K03FE 2sC537
Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)
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HN7G10FE
2SC5376F
SSM3K03FE
HN7G10FE
2sC537
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Untitled
Abstract: No abstract text available
Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent
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HN7G02FE
RN2110
SSM3K03FE
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Untitled
Abstract: No abstract text available
Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)
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HN7G10FE
2SC5376F
SSM3K03FE
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SSM3K03TE
Abstract: No abstract text available
Text: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics Symbol Rating Unit
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SSM3K03TE
SSM3K03TE
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SSM3K03FE
Abstract: No abstract text available
Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm
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SSM3K03FE
SSM3K03FE
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Untitled
Abstract: No abstract text available
Text: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications Low gate threshold voltage: Vth = 0.7~1.3 V • Optimum for high-density mounting in small packages 3 Unit Drain-source voltage
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SSM3K03FV
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Untitled
Abstract: No abstract text available
Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm
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SSM3K03FE
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SSM3K03FV
Abstract: No abstract text available
Text: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications • Low gate threshold voltage: Vth = 0.7 to 1.3 V • Optimum for high-density mounting in small packages Unit Drain-source voltage
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SSM3K03FV
SSM3K03FV
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Untitled
Abstract: No abstract text available
Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)
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HN7G01FE
2SA1955
SSM3K03FE
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fet to92
Abstract: Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM 2SK1830 2SK2035 2SK2825 SSM3J15TE
Text: Part Number SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 Nch 2SK2825 Nch 2SK2035 Nch SSM3K04FS SSM3K16FS SSM3K15FS 2SJ347 Pch SSM3J16FS SSM3J15FS 2SK1829 Nch 2SK2824 Nch 2SK2034 Nch 2SK2037 Nch SSM3K04FU SSM3K16FU SSM3K05FU
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SSM3K03TE
SSM3K16TE
SSM3K15TE
SSM3J16TE
SSM3J15TE
SSM3K03FE
SSM3K04FE
2SK1830
2SK2825
2SK2035
fet to92
Pch MOS FET
SSM3J13T
SSM3J16FU
ssm3k14t
transistor ESM
SSM3J15TE
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SSM3K03FE
Abstract: No abstract text available
Text: TOSHIBA SSM3K03FE TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE SSM3K03FE Unit in mm HIGH SPEED SWITCH APPLICATIONS AN ALO G SWITCH APPLICATIONS • • • • 1.6 ± 0.1 2.5 V Gate Drive High Input Impedance Low Gate Threshold Voltage Small Package
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SSM3K03FE
SSM3K03FE
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