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    SSM3J16 Search Results

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    SSM3J16 Price and Stock

    Toshiba America Electronic Components SSM3J16CT(TPL3)

    MOSFET P-CH 20V 100MA CST3
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    DigiKey SSM3J16CT(TPL3) Cut Tape 1
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    SSM3J16CT(TPL3) Digi-Reel 1
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    Quest Components SSM3J16CT(TPL3) 145
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    SSM3J16CT(TPL3) 145
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    Toshiba America Electronic Components SSM3J16FU(TE85L

    Transistor MOSFET P-Channel 20V 100mA 3-Pin SC70 - Tape and Reel (Alt: SSM3J16FU(TE85L,F))
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    Avnet Americas SSM3J16FU(TE85L Reel 3,000
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    Toshiba America Electronic Components SSM3J16CT

    CST3 S-MOS(LF),ACTIVE, - Tape and Reel (Alt: SSM3J16CT,L3F)
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    Avnet Americas SSM3J16CT Reel 10,000
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    Toshiba America Electronic Components SSM3J168F

    Transistor MOSFET P-Channel 60V 400mA 3-Pin SOT-346 - Tape and Reel (Alt: SSM3J168F,LXHF)
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    Avnet Americas SSM3J168F Reel 36 Weeks 3,000
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    Toshiba America Electronic Components SSM3J168FLF

    Small Low ON Resistance MOSFET P-Channel 60V 0.4A 3-Pin SOT-346 T/R - Tape and Reel (Alt: SSM3J168F,LF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SSM3J168FLF Reel 16 Weeks 3,000
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    Find more SSM3J16 price and stock on Findchips.com

    SSM3J16 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM3J168F,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 400MA S-MINI Original PDF
    SSM3J168F,LXHF Toshiba America Electronic Components SMOS LOW RON VDS:-60V VGSS:+10/- Original PDF
    SSM3J16CT Toshiba Small-signal MOS FET Original PDF
    SSM3J16CT(TPL3) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 100MA CST3 Original PDF
    SSM3J16FS Toshiba Small-signal MOS FET Original PDF
    SSM3J16FS(TE85L,F) Toshiba SSM3J16FS - Trans MOSFET P-CH 20V 0.1A 3-Pin SSM T/R Original PDF
    SSM3J16FU Toshiba Small-signal MOS FET Original PDF
    SSM3J16FUTE85LF Toshiba SSM3J16FUTE85LF - Trans MOSFET P-CH 20V 0.1A 3-Pin USM T/R Original PDF
    SSM3J16FU(TE85L,F) Toshiba Semiconductor and Storage SMALL LOW RON PCH MOSFETS VDSS:- Original PDF
    SSM3J16FV Toshiba FET Transistor, Field Effect Transistor Silicon P Channel MOS Type for High Speed Switching Applications and Analog Switch Applications Original PDF
    SSM3J16TE Toshiba FET Transistor, Field Effect Transistor Silicon P Channel MOS Type for High Speed Switching Applications and Analog Switch Applications Original PDF

    SSM3J16 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SSM3J16FU

    Abstract: No abstract text available
    Text: SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FU High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16FU SSM3J16FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3J16FU 東芝電界効果トランジスタ シリコンPチャネルMOS形（π-MOSVI） SSM3J16FU 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : RDS ON = 8Ω (最大) (@VGS = −4 V)


    Original     		SSM3J16FU PDF

    SSM3J16FS

    Abstract: No abstract text available
    Text: SSM3J16FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FS High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16FS SSM3J16FS PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type -MOSVI SSM3J16FU High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type -MOSVI SSM3J16CT High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16CT PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16TE PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16CT High Speed Switching Applications Analog Switch Applications Unit: mm 0.5±0.03 : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V)


    Original     		SSM3J16CT PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FU High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16FU PDF

    SSM3J16TE

    Abstract: No abstract text available
    Text: SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16TE SSM3J16TE PDF

    SSM3J16CT

    Abstract: No abstract text available
    Text: SSM3J16CT 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16CT 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 8Ω 最大 (@VGS = −4 V)


    Original     		SSM3J16CT SSM3J16CT PDF

    SSM3J16TE

    Abstract: No abstract text available
    Text: SSM3J16TE 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16TE 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 8 Ω 最大 (@VGS = −4 V)


    Original     		SSM3J16TE 4mmX25 SSM3J16TE PDF

    SSM3J16FV

    Abstract: No abstract text available
    Text: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSVI SSM3J16FV High Speed Switching Applications Analog Switch Applications Unit: mm : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)


    Original     		SSM3J16FV SSM3J16FV PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Unit: mm Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V)


    Original     		SSM3J16FV PDF

    SSM3J16FU

    Abstract: No abstract text available
    Text: SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FU High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16FU SC-70 SSM3J16FU PDF

    SSM3J16FV

    Abstract: No abstract text available
    Text: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Unit: mm Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V)


    Original     		SSM3J16FV SSM3J16FV PDF

    SSM3J16FS

    Abstract: No abstract text available
    Text: SSM3J16FS 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16FS 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 8Ω 最大 (@VGS = −4 V)


    Original     		SSM3J16FS 4mmX25 SSM3J16FS PDF

    SSM3J16FV

    Abstract: No abstract text available
    Text: SSM3J16FV 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16FV 高速スイッチング用 アナログスイッチ用 絶対最大定格 Ta = 25°C 記 号 定 格 VDS −20 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ±10 V


    Original     		SSM3J16FV 4mmX25 SSM3J16FV PDF

    SSM3J16TE

    Abstract: No abstract text available
    Text: SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16TE SSM3J16TE PDF

    SSM3J16FS

    Abstract: No abstract text available
    Text: SSM3J16FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FS High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16FS SSM3J16FS PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16CT High Speed Switching Applications Analog Switch Applications Unit: mm 0.5±0.03 : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V)


    Original     		SSM3J16CT PDF

    SSM3J16FV

    Abstract: No abstract text available
    Text: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V ID −100 IDP −200 PD Note 150


    Original     		SSM3J16FV 4mmX25 SSM3J16FV PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSVI SSM3J16CT High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V)


    Original     		SSM3J16CT PDF

    SSM3J16FV

    Abstract: No abstract text available
    Text: SSM3J16FV Preliminary TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V ID −100 IDP −200


    Original     		SSM3J16FV SSM3J16FV PDF

    SSM3J16FU

    Abstract: No abstract text available
    Text: SSM3J16FU 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16FU 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 8Ω 最大 (@VGS = −4 V)


    Original     		SSM3J16FU SC-70 4mmX25 SSM3J16FU PDF