Untitled
Abstract: No abstract text available
Text: SSIE1202 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current35 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.330 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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SSIE1202
Current35
Voltage30
StylePress-13
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Untitled
Abstract: No abstract text available
Text: SSIE1205 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current35 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage75 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.330 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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SSIE1205
Current35
Voltage75
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varo r634
Abstract: SSIE1440 varo diode ssie1240 Varo r624 siemens ssie1440 R622 VARO SSIE1140 R628 SSIE1230
Text: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer V VF IR IF Max RRM •FSM Max A 00 (A) 00 @ Test 25 °C @ (A) (A) IR VR Test M T2 @ Test (A) c r> Toper Package Style Max (°C) G n ral-Purp se, lo >= 25 A (Cont'd) . . . . 5 -10 .
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FB3504
RA354
35SP04
DD716
ST4-40
NCR35-400
1N4526
1N1188
D4055W
TRA1130
varo r634
SSIE1440
varo diode
ssie1240
Varo r624
siemens ssie1440
R622 VARO
SSIE1140
R628
SSIE1230
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SSIE1420
Abstract: SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J
Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM •FSM Max A 00 (A) 00 VF IF @ IR Test (A) IR VR 25 °C @ (A) Test (V) (A) @ T2 Test CO 'Opar Max (°C) Package Style General-Purpose, lo >= 25 A (Cont'd) . . . .5 . . . .10
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As-13
Press-13
Disc-10
203AB
DO-21
SSIE1420
SSiE1210
SSIE1120
aeg diode
SSiE1410
ssie1220
ssie1110
TRA1110
SSIE1205
D6050J
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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