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    SSF4606 MOSFET Search Results

    SSF4606 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    SSF4606 MOSFET Datasheets Context Search

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    ssf4606

    Abstract: SOP-8 4606 inverter 4606 mosfet SOP-8 4606 4606 MOSFET circuit diagram MOSFET 4606 A 4606 SSF4606 mosfet mosfet inverter 4606
    Text: SSF4606 DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS ON and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES


    Original     		PDF SSF4606 SSF4606 330mm SOP-8 4606 inverter 4606 mosfet SOP-8 4606 4606 MOSFET circuit diagram MOSFET 4606 A 4606 SSF4606 mosfet mosfet inverter 4606

    Mosfet

    Abstract: SSF4606 SOP-8 4606 4606 sop8
    Text: SSF4606 30V Complementary MOSFET DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS ON and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic Diagram


    Original     		PDF SSF4606 SSF4606 Mosfet SOP-8 4606 4606 sop8