SS8050 Y1 TRANSISTOR Search Results

SS8050 Y1 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SS8050 Y1 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ss8050 sot-23 Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 ss8050 sot-23 SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz	PDF
ss8050 sot-323 Abstract: SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol	Original	OT-323 SS8050 OT-323 SS8550 ss8050 sot-323 SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol	Original	OT-323 SS8050 OT-323 SS8550	PDF
ss8050 sot-23 Abstract: SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23 Text: SS8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	OT-23 SS8050 OT-23 SS8550 800mA 800mA, 30MHz 100mA ss8050 sot-23 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz	PDF
SS8050 sot-23 Y1 Abstract: Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8050 Pb z Collector Current. IC= 1.5A） z Complementary To SS8550. z Collector dissipation:PC=300mW(TC=25℃ Lead-free APPLICATIONS z High Collector Current. SOT-23	Original	SS8050 SS8550. 300mW OT-23 BL/SSSTC086 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1	PDF
SS8050 Abstract: 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1 Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES      A L Complimentary to SS8550 Power Dissipation PCM : 0.3W Collector Current	Original	SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz 26-Oct-2009 SS8050 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1	PDF
Untitled Abstract: No abstract text available Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Power dissipation PCM : 0.3 W Collector Current ICM : 1.5 A Collector-base voltage V BR CBO : 40 V	Original	SS8050 OT-23 500mA 30MHz 01-June-2005	PDF
TPT5609 Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)	Original	2N3904 2N3906 2N4124 2N4400 2N4401 2N4402 2N4403 2N5401 2N5551 2N6517 TPT5609 SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A	PDF
bq 8050 Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ Text: 目录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管	Original	OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6	PDF
SS8050 Abstract: ss8050 sot-23 ss8050y1 MARKING JM Text: SS8050 NPN General Purpose Transistors SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base voltage Emitter-Base VOItage Collector Current-Continuous S ym bol V a lu e V CEO VCBO 25 40 6 .0 1500 vebo ic Characteristics Total Device Dissipation FR-5 Board 1	OCR Scan	SS8050 OT-23 TA-25 SS8050 ss8050 sot-23 ss8050y1 MARKING JM	PDF