G60N
Abstract: Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 TC1410N 100n00
Text: AN1256 Microchip’s Power MOSFET Driver Simulation Models Author: Cliff Ellison Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The simulation models for Microchip’s power MOSFET drivers aid in the design and analysis of various circuits
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AN1256
TC1410N
DS01256A-page
G60N
Thermistor pspice
mosfet mark code G4
ic 8870
ORCAD PSPICE BOOK
AN1256
IRFZ34
MBR340
100n00
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G60N
Abstract: SS31 DIODE DS22062 pspice model TC4423A Tc4421 spice model TC1412 Latch-Up Protection for MOSFET Drivers 439M AN1327 TC1411
Text: AN1327 Avoiding MOSFET Driver Overstress Author: Ray DiSilvestro Microchip Technology Inc. INTRODUCTION This application note describes how to avoid MOSFET driver overstress. MOSFET drivers are used in many applications to drive the high input capacitance of a
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AN1327
dri18
DS01327A-page
G60N
SS31 DIODE
DS22062
pspice model TC4423A
Tc4421 spice model
TC1412
Latch-Up Protection for MOSFET Drivers
439M
AN1327
TC1411
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th201
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE MAX20091 General Description The MAX20091 is a 35-channel automotive contact monitor for automotive applications. Ten contact monitor inputs can be used with either ground- or battery-connected switches; the other 25 inputs are for use with groundconnected switches.
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MAX20091
MAX20091
35-channel
th201
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 2, 01/2009 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files
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MPC8610EC
MPC8610
32-bit
32-Kbyte
256-Kbyte,
36-bit
72-bit
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Untitled
Abstract: No abstract text available
Text: PC8610 Integrated Host Processor Hardware Specifications Datasheet - Preliminary Specification Features • • • • • • • • • • • • • e600 Power Architecture Processor Core PD Maximum 16W at 1.33 GHz VDD = 1.025V ; 13W at 1.066 GHz (VDD = 1.00V)
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PC8610
0926D
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SS31
Abstract: No abstract text available
Text: T O S H IB A 1SS311 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 1 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp = 0.94V : VR = 400V
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1SS311
SC-59
961001EAA2'
SS31
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1SS31
Abstract: 1SS313
Text: 1SS313 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 3 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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1SS313
1SS31
SC-70
1SS313
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1SS315
Abstract: No abstract text available
Text: 1SS315 TO SH IBA TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS31 5 U nit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
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1SS315
1SS315
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marking AOO
Abstract: 1SS31 1SS311
Text: TOSHIBA 1SS311 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 1 Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package + 0.5 2.5 -0 .3 : Vp = 0.94V Typ.
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1SS31
1SS311
SC-59
961001EAA2'
marking AOO
1SS311
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Untitled
Abstract: No abstract text available
Text: 1SS314 TO SHIBA 1 SS31 4 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5H (Typ.) +0.2 1.2 5 - 0. IL SYMBOL Vr
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1SS314
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1SS314
Abstract: No abstract text available
Text: 1SS314 TOSHIBA 1 SS31 4 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.50 (Typ.) U nit in mm + 0.2 1.2 5 - 0 . il 0*tH ÖÖ
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1SS314
1SS314
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1SS31
Abstract: 1SS312
Text: 1SS312 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 2 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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1SS312
1SS31
SC-70
1SS312
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS311 1 SS31 1 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp = 0.94V : VR = 400V : trr = 1.5/ j s
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1SS311
SC-59
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1SS314
Abstract: No abstract text available
Text: 1SS314 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 4 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.50 (Typ.) 0 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)
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1SS314
1SS314
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1SS312
Abstract: No abstract text available
Text: TOSHIBA 1SS312 1 SS31 2 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. 2.1 ± 0.1 • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) 1.25±0.1 OO +I 3-
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1SS312
SC-70
100MHz
1SS312
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Untitled
Abstract: No abstract text available
Text: 1SS319 T O SH IB A TO SHIBA DIODE 1 SS31 9 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.2 2.9 - 0 .3 • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package
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1SS319
SC-61
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Untitled
Abstract: No abstract text available
Text: 1SS313 TOSHIBA 1 SS31 3 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • 2.1 ± 0.1 Small Package. Small Total Capacitance : Ct = 1.2pF Max. Low Series Resistance : rs = 0.6fl (Typ.) 1. 2 5 ± 0.1 3 OO
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1SS313
SC-70
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 4 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5fl (Typ.) M A X IM U M RATINGS (Ta = 25°C)
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1SS314
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature
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1SS315
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SS31 DIODE
Abstract: SS31
Text: 1SS319 T O SH IB A TOSHIBA DIODE 1 SS31 9 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. + 0.2 • • • 2.9 - 0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package : SC-61
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1SS319
SC-61
961001EAA2'
SS31 DIODE
SS31
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1SS315
Abstract: No abstract text available
Text: TOSHIBA 1SS315 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS31 5 UHF BAND MIXER APPLICATIONS. U n i t in m m + 0.2 1.2 5 - 0 . il 0*tH ÖÖ i +I 0 ± 0.05 M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current
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1SS315
1SS315
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm .1 . 2 +0.2 5 - 0. IL iM O -H in CM Nr— Nh i M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current
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1SS315
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES, GLASS PACKAGE, GENERAL PURPOSE 400mW N o m in a l Zener V o tu g e M a x im u m Zener im p e d a n t * Test a t I, C u rre n t M a x im u m R e v e r s e N o g «A V. JAaxirtturrt Zener C u r re n t lili 1. Max <mA| BC 0 Sum * B ,C ,D S u ffix
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400mW
-IN6084
DO-35
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74s532
Abstract: 6D70 74LS series logic gate symbols 74S531
Text: 8 -B it Latch, 8 -B it Register w ith 3 2 mA Outputs SN 74S531 S N 74S 532 Ordering Information Features/ Benefits • High drive capability Iq l - 32 mA • Three-state outputs drive bus lines • 20-pln SKINNYDIP saves space • 8-bit data path matches byte boundaries
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74S531
20-pln
SN74S373/4
is54/74S,
50fiand:
54/74S,
54/74LS
74s532
6D70
74LS series logic gate symbols
74S531
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