Untitled
Abstract: No abstract text available
Text: SS22 thru SS26 Vishay Semiconductors formerly General Semiconductor Surface Mount Schottky Rectifiers DO-214AA SMB Reverse Voltage 20 to 60V Forward Current 2.0A Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.085 MAX
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Original
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DO-214AA
DO-214AA
MIL-STD750,
08-Apr-05
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PDF
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SS26 SMB
Abstract: No abstract text available
Text: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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Original
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0E-01
0E-02
0E-03
0E-04
0E-01
SS26 SMB
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PDF
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marking code ss24
Abstract: galaxy s2 SS22 SS23 SS24 SS25 SS26 SS22-SS26
Text: BL GALAXY ELECTRICAL SS22 - SS26 REVERSE VOLTAGE: 20 - 60 V CURRENT: 2.0 A SCHOTTKY BARRIER RECTIFIER FEATURES DO - 214AA SMB Plastic package has Underwriters Laboratory 111 Flammability Classification 94V-0 For surface mounted applications Low profile package
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Original
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214AA
oC/10
DO-214AA
11CURRENT
150OC
SS22-SS24
SS25-SS26
50mVp-p
marking code ss24
galaxy s2
SS22
SS23
SS24
SS25
SS26
SS22-SS26
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PDF
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SS26
Abstract: SS26T3 SS26 SMB marking ss26
Text: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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Original
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SS26/D
SS26
SS26T3
SS26 SMB
marking ss26
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PDF
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SS26T3G
Abstract: SS26 SS26T3
Text: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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Original
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SS26/D
SS26T3G
SS26
SS26T3
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PDF
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SS24
Abstract: No abstract text available
Text: SS22 thru SS26 Vishay Semiconductors formerly General Semiconductor Surface Mount Schottky Rectifiers DO-214AA SMB Reverse Voltage 20 to 60V Forward Current 2.0A Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.100 MAX
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Original
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DO-214AA
DO-214AA
MIL-STD750,
50mVp-p
09-Feb-04
SS24
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PDF
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s6 general semiconductor
Abstract: s4 vishay DO-214AA package power rating SS24 SS26 marking code ss24 MARKING S6 smB marking ss24 S4 DO-214AA DO-214AA diode
Text: SS22 thru SS26 Vishay Semiconductors formerly General Semiconductor Surface Mount Schottky Rectifiers DO-214AA SMB Reverse Voltage 20 to 60V Forward Current 2.0A Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.106 MAX
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Original
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DO-214AA
DO-214AA
MIL-STD750,
50mVp-p
25-Jun-02
s6 general semiconductor
s4 vishay
DO-214AA package power rating
SS24
SS26
marking code ss24
MARKING S6 smB
marking ss24
S4 DO-214AA
DO-214AA diode
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PDF
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SS24
Abstract: SS22 SS23 SS25 SS26 S4 DO-214AA marking ss24 SS24 VISHAY
Text: SS22 thru SS26 Vishay Semiconductors formerly General Semiconductor Surface Mount Schottky Rectifiers DO-214AA SMB Reverse Voltage 20 to 60V Forward Current 2.0A Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.085 MAX
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Original
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DO-214AA
DO-214AA
MIL-STD750,
50mVp-p
12-Mar-04
SS24
SS22
SS23
SS25
SS26
S4 DO-214AA
marking ss24
SS24 VISHAY
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PDF
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Untitled
Abstract: No abstract text available
Text: SS22, SS23, SS24, SS25, SS26 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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Original
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DO-214AA
J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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diode ss24
Abstract: No abstract text available
Text: SS22, SS23, SS24, SS25, SS26 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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Original
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J-STD-020,
DO-214AA
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
diode ss24
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PDF
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SS26
Abstract: SS26 SMB
Text: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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Original
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0E-01
0E-02
0E-03
0E-04
0E-03
SS26
SS26 SMB
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PDF
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Untitled
Abstract: No abstract text available
Text: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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Original
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SS26/D
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PDF
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SS26T3G
Abstract: SS26 SS26T3 SS26 SMB
Text: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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Original
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SS26/D
SS26T3G
SS26
SS26T3
SS26 SMB
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PDF
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SS26 SMB
Abstract: SS26
Text: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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Original
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r14525
SS26/D
SS26 SMB
SS26
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PDF
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Untitled
Abstract: No abstract text available
Text: SS22 thru SS26 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop
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Original
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DO-214AA
J-STD-020,
AEC-Q101
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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schottky diode SMB marking code 120
Abstract: Model 077 CASE 403A dv/dt diode protection SS26 SS26T3 SS26T3G
Text: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package .Ă.Ă.Ăemploying the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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Original
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SS26/D
schottky diode SMB marking code 120
Model 077
CASE 403A
dv/dt diode protection
SS26
SS26T3
SS26T3G
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PDF
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SS26
Abstract: SS34 DO-214AA
Text: SS22 thru SS26 Surface Mount Schottky Rectifiers Reverse Voltage 20 to 60V Forward Current 2.0A DO-214AA SMB Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.106 MAX (2.69 MAX) Dimensions in inches and (millimeters)
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Original
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DO-214AA
DO-214AA
MIL-STD750,
003oz.
50mVp-p
SS26
SS34 DO-214AA
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PDF
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marking SS24
Abstract: No abstract text available
Text: SS22 thru SS26 Surface Mount Schottky Rectifiers Reverse Voltage 20 to 60V Forward Current 2.0A DO-214AA SMB Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.106 MAX (2.69 MAX) Dimensions in inches and (millimeters)
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Original
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DO-214AA
DO-214AA
MIL-STD750,
003oz.
50mVp-p
marking SS24
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PDF
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SS26
Abstract: SS24 SMB SR202 SR205 SS22 SS23 SS24 SS25
Text: SS22 THRU SS26 FRONTIER ELECTRONICS CO., LTD. 2A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES ! FOR SURFACE MOUNTED APPLICATIONS ! LOW PROFILE PACKAGE ! BUILT-IN STRAIN RELIEF ! EASY PICK AND PLACE ! PLASTIC MATERIAL USED CARRIES UNDERWRITERS LABORATORY CLASSIFICATION 94 V-0
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Original
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SOLDERING250/10
DO-214AA
SR202
SR205
SS26
SS24 SMB
SS22
SS23
SS24
SS25
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PDF
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Schottky
Abstract: JESD22-B102 J-STD-002 SS22 SS26 S4 DO-214AA
Text: SS22 thru SS26 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
DO-214AA
11-Mar-11
Schottky
JESD22-B102
J-STD-002
SS22
SS26
S4 DO-214AA
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PDF
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Untitled
Abstract: No abstract text available
Text: SS22 THRU SS26 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 60 Volts Current 2.0 Amperes SMB/DO-214AA Features a a a a a a a a For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop
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Original
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SMB/DO-214AA
RS-481
093gram
SS22-SS24
50mVp-p
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PDF
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marking ss24
Abstract: SS24 SS24 SMB marking code ss24 S4 DO-214AA SS26 DO-214AA, S6 SS22 SS23 SS25
Text: SS22 thru SS26 Surface Mount Schottky Rectifier Reverse Voltage 20 to 60V Forward Current 2.0A DO-214AA SMB Mounting Pad Layout DO-214AA 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.106 MAX (2.69 MAX) Dimensions in inches and (millimeters) 0.180 (4.57)
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Original
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DO-214AA
50mVp-p
marking ss24
SS24
SS24 SMB
marking code ss24
S4 DO-214AA
SS26
DO-214AA, S6
SS22
SS23
SS25
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PDF
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SS34 SMB
Abstract: marking SS24 SS34 SS36 smb SS34 DO-214AA
Text: SS22 thru SS26 Surface Mount Schottky Rectifier Reverse Voltage 20 to 60V Forward Current 2.0A DO-214AA SMB Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) Dimensions in inches and (millimeters) 0.106 MAX (2.69 MAX) 0.083 MIN
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Original
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DO-214AA
50mVp-p
SS34 SMB
marking SS24
SS34
SS36 smb
SS34 DO-214AA
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PDF
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193ie7
Abstract: SS22 SS23 SS24 SS25 SS26
Text: SS22 THRU SS26 3X Voltage Range 20 to 60 Volts Current 2.0 Amperes 2.0 AMP. SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SMB/DO-214AA Features .082 2.08 .076(1.93) • For surface mounted application n • Metal to silicon rectifier,majority carrier conduction
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OCR Scan
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SMB/DO-214AA
RS-481
193ie7
SS22
SS23
SS24
SS25
SS26
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PDF
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