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    SRAM STM Search Results

    SRAM STM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy

    SRAM STM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M48Z512A

    Abstract: M48Z512AV M48Z512AY SOH28 CP2022
    Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z512A M48Z512AY, M48Z512AV 32-pin M48Z512A: M48Z512AY: M48Z512AV: M48Z512A M48Z512AV M48Z512AY SOH28 CP2022

    M40Z300

    Abstract: M48Z512A M48Z512AV M48Z512AY
    Text: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z512A M48Z512AY, M48Z512AV* 32-pin M48Z512A: M48Z512AY: M48Z512AV: M40Z300 M48Z512A M48Z512AV M48Z512AY

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z129Y* M48Z129V 32-pin PMDIP32 M48Z129Y: M48Z129V: M48Z129V M48Z129Y

    M48Z512A

    Abstract: M48Z512AV M48Z512AY SOH28
    Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512Kb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 32 1 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■


    Original     		PDF M48Z512A M48Z512AY, M48Z512AV 512Kb PMDIP32 M48Z512A: M48Z512AY: M48Z512AV: 28-PIN M48Z512A M48Z512AV M48Z512AY SOH28

    M40Z300

    Abstract: M48Z512A M48Z512AV M48Z512AY SOH28
    Text: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z512A M48Z512AY, M48Z512AV* 32-pin M48Z512A: M48Z512AY: M48Z512AV: M40Z300 M48Z512A M48Z512AV M48Z512AY SOH28

    M48Z512A

    Abstract: M48Z512AY
    Text: M48Z512A M48Z512AY 4 Mbit 512Kb x8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z512A M48Z512AY 512Kb M48Z512A: M48Z512AY: PMDIP32 M48Z512A/512AY M48Z512A M48Z512AY

    Untitled

    Abstract: No abstract text available
    Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z128 M48Z128Y, M48Z128V* M48Z128: M48Z128Y: M48Z128V: 28-PIN 32-LEADd

    Untitled

    Abstract: No abstract text available
    Text: M48Z512A M48Z512AY 4 Mbit 512Kb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z512A M48Z512AY 512Kb PMDIP32 M48Z512A: M48Z512AY: M48Z512A/512AY

    M48Z128

    Abstract: M48Z128V M48Z128Y M40Z300
    Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z128 M48Z128Y, M48Z128V* 32-pin M48Z128: M48Z128Y: M48Z128V: M48Z128 M48Z128V M48Z128Y M40Z300

    M48Z2M1

    Abstract: M48Z2M1Y a20 Schottky diode st
    Text: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z2M1 M48Z2M1Y PMLDIP36 M48Z2M1: M48Z2M1Y: M48Z2M1/2M1Y M48Z2M1 M48Z2M1Y a20 Schottky diode st

    M48Z2M1

    Abstract: M48Z2M1Y
    Text: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE ABSENCE OF POWER


    Original     		PDF M48Z2M1 M48Z2M1Y M48Z2M1: PLDIP36 M48Z2M1Y: M48Z2M1, M48Z2M1 M48Z2M1Y

    Schottky Diode 75V 7A

    Abstract: M48Z512A M48Z512AV M48Z512AY SOH28
    Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512Kb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 32 1 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■


    Original     		PDF M48Z512A M48Z512AY, M48Z512AV 512Kb PMDIP32 M48Z512A: M48Z512AY: M48Z512AV: 28-PIN Schottky Diode 75V 7A M48Z512A M48Z512AV M48Z512AY SOH28

    M48Z2M1V

    Abstract: M48Z2M1Y
    Text: M48Z2M1Y M48Z2M1V 5V or 3.3V, 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: 36-pin, PLDIP36 M48Z2M1Y, M48Z2M1V M48Z2M1Y

    M48Z512A

    Abstract: M48Z512AY SOH28
    Text: M48Z512A M48Z512AY 4 Mbit 512Kb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 32 1 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z512A M48Z512AY 512Kb PMDIP32 M48Z512A: M48Z512AY: 28-PIN 32-LEAD M48Z512A M48Z512AY SOH28

    Untitled

    Abstract: No abstract text available
    Text: M48Z128 M48Z128Y 5.0 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z128 M48Z128Y M48Z128: M48Z128Y:

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z129Y* M48Z129V M48Z129Y: M48Z129V: M48Z129V M48Z129Y

    Untitled

    Abstract: No abstract text available
    Text: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z512A M48Z512AY, M48Z512AV* M48Z512A: M48Z512AY: M48Z512AV:

    M48Z512A

    Abstract: M48Z512BV
    Text: M48Z512BV 3.3 V, 4 Mbit 512 K x 8 bit ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles 32 1 ■ 10 years of data retention in the absence of power


    Original     		PDF M48Z512BV PMDIP32 M48Z512A M48Z512BV 304-bit M48Z512A

    M48Z128

    Abstract: M48Z128V M48Z128Y AN1012
    Text: M48Z128 M48Z128Y, M48Z128V 5.0 V or 3.3 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z128 M48Z128Y, M48Z128V M48Z128: M48Z128Y: M48Z128V: PMDIP32 M48Z128 M48Z128V M48Z128Y AN1012

    5716

    Abstract: M48Z129V M48Z129Y
    Text: M48Z129Y M48Z129V 5.0 V or 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z129Y M48Z129V M48Z129Y: 5716 M48Z129V M48Z129Y

    MTSC1008

    Abstract: micron sram DDD347D MT5C1008 MT5C1008DJ-25 5A143 MT5C100B IA15I 81A12
    Text: MICRON TE C H N O L O G Y INC M I C R O t i l l 5 in Q 0 034b4 Oñb SSE » MT5C1008 128K X 8 SRAM N SRAM 128K x 8 SRAM 5 VOLT SRAM WITH OUTPUT ENABLE FEATURES • High speed: 12*, 15*, 17,20,25,35 and 45ns • High-performance, low-power, CMOS double-metal


    OCR Scan     		PDF MT5C1008 G003M71 MTSC1008 micron sram DDD347D MT5C1008DJ-25 5A143 MT5C100B IA15I 81A12

    Untitled

    Abstract: No abstract text available
    Text: JUL 14 '993 PRELIMINARY MT4LS12832 128K X 32 SRAM MODULE M IC R O N • SfcMcCONDOCIOR. MC SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process


    OCR Scan     		PDF MT4LS12832 512KB 64-Pin C1993.

    MT8C1008

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE D • L. 1 1 1 5 H I 000341=4 dfib « U R N V-'llCROfNJ 128K MT5C1008 X 8 SRAM 'T'-M w-'L's-m- SRAM 128K X 8 SRAM FEATURES • High speed: 12*, 15*, 17,20,25,35 and 45ns


    OCR Scan     		PDF MT5C1008 32-Pin GQD3M71 MT8C1008

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N I MT8LS25632 256K X 32 SRAM MODULE SeUiCONDuL'OK INC SRAM MODULE 256K x 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process • Single +3.3V ± 0.3V power supply


    OCR Scan     		PDF MT8LS25632 64-Pin