SRAM 32K X 8 Search Results

GVT7132D32

Abstract: 7132D32
Contextual Info: GALVANTECH, GVT7132D32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTIO N • • • • • The Galvantech Synchronous Burst SRAM family

GVT7132C32

Abstract: marking A00 GVT7132C32Q-4
Contextual Info: GALVANTECH, INC. GVT7132C32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family

GALVANTECH

Abstract: GVT7132B36 DQ25d
Contextual Info: GALVANTECH, INC. GVT7132B36 32K X 36 SYNCHRONOUS BURST SRAM 32K x 36 SRAM SYNCHRONOUS BURST SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family

A12L

Abstract: IDT70V7278
Contextual Info: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks

DRAM 256 X 1, 18 PDIP

Abstract: 64K X 4 SRAM mmui
Contextual Info: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8

O10L

Abstract: A12L IDT70V7278 "32K x 16" dual port SRAM O8L-15L
Contextual Info: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks

M48Z30

Abstract: M48Z30Y
Contextual Info: M48Z30 M48Z30Y CMOS 32K x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER PIN and FUNCTION COMPATIBLE with JEDEC STANDARD 32K x 8 SRAMs

A12L

Abstract: IDT70V7278 register with truth table
Contextual Info: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks

Contextual Info: I dt Integrated Device Technology, Inc. HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks

Contextual Info: Integrated D e v ile Technology, li e . HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks

Contextual Info: |U |I C R O N 32K X M T58LC 32K 32/36D 8 32/36 S Y N C B U R S T SRAM 32K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • Fast access times: 4.5, 5, 6 and 7ns

Contextual Info: MT5C2568 883C 32K x 8 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 32K x 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • • • • • Ultra high speed 12, 15ns High speed: 20, 25, 35 and 45ns Battery backup: 2V data retention Low power standby

Contextual Info: ADVANCE 32K SYNCHRONOUS SRAM X M T58LC 32K 36D 7 36 S Y N C B U R S T SRAM 32K x 36 SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES Fast access times: 4.5, 5, 6. 7 and 8ns Fast O E access tim es: 5 and 6ns Single +3.3V + 1 0 % /-5 % pow er supply

V727

Abstract: ce1111
Contextual Info: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS I dt Integrated Device Technology, Inc. PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks

Contextual Info: Integrated D e v ile Technology, li e . HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks

A12L

Abstract: IDT707278
Contextual Info: HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks - 512 Kilobit of memory on chip

D9000007

Contextual Info: AS& AUSTIN SEMICONDUCTOR, INC. SRAM MT5C2568 883C 32K x 8 SRAM 32K x 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-88662 • MIL-STD-883 28-PIN SOJ 28-Pin DIP (D15/D10) FEATURES • • • • • Ultra high speed 12,15ns

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks - 512 Kilobit of memory on chip

A12L

Abstract: IDT707278 IDT707288 512kbit
Contextual Info: HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks - 512 Kilobit of memory on chip

Contextual Info: □PM . Dense-Pac Microsystems Inc. DPS32M8A ^ HICH SPEED 32K X 8 CMOS SRAM MONOLITHIC ADVANCED INFORMATION DESCRIPTION: The DPS32M8A is a 32K X 8 CMOS Static Random Access Memory SRAM . The memory utilizes asynchronous circuitry and may be maintained in any

Contextual Info: PRELIMINARY saecoMucrm iHc. t MEG SYNCHRONOUS SRAM DIE SRAM DIE 1 MEG SYNCHRONOUS SRAM 64K x 18, 32K x 32 and 32K x 36 FEATURES Single 3.3V ±0.2V power supply 5V-tolerant I/O Common data inputs and data outputs Individual BYTE WRITE control and GLOBAL WRITE

Contextual Info: UG3D3264C7B8 256K Bytes 32K x 64 160 Pin SRAM DIMM based on 32K x 32 Features General Description The UG3D3264C7B8 is a 262,019 bits by 64 Sync Burst SRAM module. The UG3D3264C7B8 is assembled using 2 pcs of 32K x 32 Sync Burst SRAMs in 100-pin QFP packages and

Contextual Info: Integrated D e v ile Technology, li e . HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks

Contextual Info: MICRON I 32K TECHNOLOGY, INC. X MT58LC32K32/36B3 32/36 SYNCBURST SRAM 32K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9,10 and 11ns