SRAM 2K X 8 Search Results

MT5C1608

Contextual Info: M IC R O N 2K SRAM MT5C1608 X 8 SRAM 2K X 8 SRAM • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible

52002HR

Abstract: 52002I IN3064 2k x 8 nvram
Contextual Info: 52002 2K BIT 256 x 8 NVRAM 2K Bit Static RAM backed by 2K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit EEPROM Changes SRAM Cycle Time less than 300 ns Power-Faiiure Protection Unlimited Recall Cycles Memory Margining Capability

SOP24

Abstract: PDIP28 U631H16 a9235
Contextual Info: Obsolete - Not Recommended for New Designs U631H16 SimtekSoftStore 2K x 8 nvSRAM Features Description • The U631H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile

M48Z02

Abstract: M48Z12 MK48Z02
Contextual Info: M48Z02 M48Z12 CMOS 2K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATICPOWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT

PCDIP24

Abstract: DS1220 M48Z02 M48Z12 M48Z02 Zeropower
Contextual Info: M48Z02 M48Z12 16Kb 2K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES

PDIP24

Abstract: U635H16 A-9215
Contextual Info: Obsolete - Not Recommended for New Designs U635H16 PowerStore 2K x 8 nvSRAM Features Description • The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile

PDIP24

Abstract: U635H16 ZMD AG
Contextual Info: U635H16 PowerStore 2K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in

PCDIP24

Abstract: M48Z02 Zeropower DS1220 M48Z02 M48Z12
Contextual Info: M48Z02 M48Z12 16Kb 2K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;

B8432

Abstract: sram 2k x 8 MB8432
Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;

PDIP28

Abstract: U630H16 ZMD AG
Contextual Info: U630H16 HardStore 2K x 8 nvSRAM Features Description ! High-performance CMOS nonvo- The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In

pv41

Contextual Info: PRELIMINARY IDT7MPV4160 IDT7MPV4161 IDT7MPV4162 IDT7MPV4162A IDT7MPV4163 64K/1 28K/256K/51 2K x 36 SYNCHRONOUS SRAM MODULE FAMILY FEATURES: DESCRIPTION: • Pin compatible flow-through synchronous SRAM module family • 144 position SO-DIMM Connector, - Berg part number: 61178

PDIP24

Abstract: U63716 ZMD AG
Contextual Info: Preliminary U63716 CapStore 2K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U63716 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in

PLCC32

Abstract: U630H16 U630H16PA35 GR47 all stk ic diagram
Contextual Info: U630H16PA35 HardStore 2K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In

6264 SRAM

Abstract: SRAM 6264
Contextual Info: UALON MICROELECTRONICS 2ME D HM6116 2K X 8 SRAM m M S T a o m DQJOOSB a T~ ‘•Rp ~3.3-l3~. H M 6264/L 8K 8 SRAM X M Features Features * High speed - 70/100/120 ns MAX. * Low Power dissipation: 250mW ( Ty p .) Operating. 5 /tW ( Ty p .) Standby. * Single 5V power supply.

PDIP28

Abstract: U630H16 GR47 NECO STK 480
Contextual Info: Obsolete - Not Recommended for New Designs U630H16 HardStore 2K x 8 nvSRAM Features Description • The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In

Contextual Info: /T T SGS-THOMSON M48T02 A 7 # . [M»[g[LI gmMD(gS_ M48T12 16Kb (2K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE,

all stk ic diagram

Abstract: IC NE 555 stk all ic data stk 2048 PLCC32 U630H16 U630H16P U630H16PA35 U631H16 Stk Ic Data Software
Contextual Info: Obsolete - Not Recommended for New Designs U630H16P HardStore 2K x 8 nvSRAM Features Description • The U630H16P has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In

U630H16

Abstract: U630H16XS W2565 2ETA
Contextual Info: Obsolete - Not Recommended for New Designs U630H16XS HardStore 2K x 8 nvSRAM Die Features Description • The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In

Contextual Info: M IC R O N 2K SRAM 2K X M T 5C 1608 X 8 SRAM 8 SRAM • H ig h sp eed : 9 , 1 0 ,1 2 , 1 5 , 2 0 a n d 25ns • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m etal p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly • E asy m em o ry ex p a n sio n w ith C E an d O E optio n s

Contextual Info: /T T SGS-THOMSON M48Z02 A 7 # . [M»[g[LI gmMD(gS_ M48Z12 16Kb (2K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

CQFP68

Abstract: 95051 5962-8861011UA QP7133 QP7133SA
Contextual Info: QP7133SA QP7133LA DS QP7133.doc QP7133SA & QP7133LA High-Speed 2K x 16 Dual-Port Static RAM General Description The QP7133SA/LA are CMOS Fast 2K x 16 Dual-Port Static RAMs SRAM . QP Semiconductor designed the QP7133SA/LA to be direct replacements for the IDT7133SA/LA. They are designed to be used as stand-alone DualPort RAMs in 16 bit applications.

2816 eeprom

Abstract: CI EEPROM 2816 eeprom 2816 CI EPROM 2816 2816 eprom EEPROM 2816 DATASHEET 2716 eprom datasheet DS1220Y DS1220Y-100 DS1220Y-120
Contextual Info: DS1220Y 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles

BA5L

Abstract: 70V7599 IDT70V7599 IDT70V7599S R4B15
Contextual Info: HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7599S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 36 banks