Dp 140c
Abstract: CY7C006 CY7C016 CY7C025 CY7C0251 JESD22 8361H
Text: Cypress Semiconductor Qualification Report QTP# 98302 VERSION 1.2 March, 1999 Dual Port SRAM - R28 Technology - Fab 2 CY7C025 8K x 16 Dual Port SRAM CY7C0251 8K x 18 Dual Port SRAM CY7C006 16K x 8 Dual Port SRAM CY7C016 16K x 9 Dual Port SRAM Cypress Semiconductor
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CY7C025
CY7C0251
CY7C006
CY7C016
7C0251D)
7C0251D
CY7C0251-AC
Dp 140c
CY7C006
CY7C016
CY7C025
CY7C0251
JESD22
8361H
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Static Random Access Memory SRAM
Abstract: MPC555
Text: SECTION 20 STATIC RANDOM ACCESS MEMORY SRAM The MPC555 contains two static random access memory (SRAM) modules: a 16Kbyte module and a 10-Kbyte module. The SRAM modules provide the microcontroller unit (MCU) with fast (one cycle access), general-purpose memory. The SRAM can
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MPC555
16Kbyte
10-Kbyte
MPC555
Static Random Access Memory SRAM
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Static Random Access Memory SRAM
Abstract: MPC555
Text: SECTION 20 STATIC RANDOM ACCESS MEMORY SRAM The MPC555 contains two static random access memory (SRAM) modules: a 16Kbyte module and a 10-Kbyte module. The SRAM modules provide the microcontroller unit (MCU) with fast (one cycle access), general-purpose memory. The SRAM can
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MPC555
16Kbyte
10-Kbyte
MPC555
Static Random Access Memory SRAM
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5962-8969001
Abstract: 71256L35L32B 5962-8855201XA 5962-8866201XA 7164S25L32B 5962-8552512XA 71256L70DB 600MIL IDT CERDIP 20 PACKAGE 5962-8670513RA
Text: SRAM MILITARY SELECTOR GUIDE SRAM Military Offerings Page SRAM Military Selector Guide . 3-6 SRAM Military Selector Guide by SMD Number . 7-9 Obsolete Part List and Replacement Guide . 10
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6116LA120DB
6116LA120TDB
6116LA150DB
6116LA150TDB
6116LA20TDB
6116LA25TDB
6116LA35TDB
6116LA45DB
6116LA45TDB
6116LA55DB
5962-8969001
71256L35L32B
5962-8855201XA
5962-8866201XA
7164S25L32B
5962-8552512XA
71256L70DB
600MIL
IDT CERDIP 20 PACKAGE
5962-8670513RA
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TCAM
Abstract: nP3400 PB3450 nP3450 amcc np3400
Text: nP3450 Advanced Product Brief 4.4Gbps Integrated Network Processor and Traffic Manager PB3450 / V0.3 / 04/24/2003 • Switched Ethernet Platforms • Ethernet Over SONET/SDH • CPE Equipments, MTU/MDU SRAM SRAM SRAM SRAM/ TCAM Applications Features 24 FE
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nP3450
PB3450
nP3450
nP3400
nP3400
nP3400.
OC-192
TCAM
amcc np3400
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5962-8866201XA
Abstract: SRAM 64k 5962-8855201XA 5962-8552512YA 5962-8866202XA 5962-8855204XA cerdip 300mil 5962-88740 5962-8552508XA 5962-8866203XA
Text: SRAM Military Offerings SRAM Military Selector Guide SRAM Military Selector Guide by SMD number Obsolete Part List and replacement Guide May 2005 Page 2-5 6-8 9 SRAM Military Selector Guide (by Part Number) IDT Part Number Package Description 6116LA120DB
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6116LA120DB
6116LA120TDB
6116LA150DB
6116LA150TDB
6116LA20TDB
6116LA25TDB
6116LA35TDB
6116LA45DB
6116LA45TDB
6116LA55DB
5962-8866201XA
SRAM 64k
5962-8855201XA
5962-8552512YA
5962-8866202XA
5962-8855204XA
cerdip 300mil
5962-88740
5962-8552508XA
5962-8866203XA
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CY7C144V
Abstract: CY7C017 CY7C109-VC
Text: Cypress Semiconductor Qualification Report QTP# 99395 VERSION 1.0 January, 2000 Synchronous/Asynchronous Dual Port SRAM 3.3V and 5V R42HD Technology, Fab 4 Qualification CY7C026(V)/CY7C036(V) 16K x 16/18 Asynchronous DP SRAM CY7C025(V)/CY7C0251(V) 8K x 16/18 Asynchronous DP SRAM
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R42HD
CY7C026
/CY7C036
CY7C025
/CY7C0251
CY7C024
/CY7C0241
CY7C09269
/CY7C09369
x16/18
CY7C144V
CY7C017
CY7C109-VC
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Untitled
Abstract: No abstract text available
Text: WSF128K32V-XG2TX 128KX32 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 25ns (SRAM) and 90ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each
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WSF128K32V-XG2TX
128KX32
120ns
128K32
120ns
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SD10
Abstract: SD12 SD13 SD14 SD15
Text: WSF128K16V-XH1X 128KX16 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 70ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each
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WSF128K16V-XH1X
128KX16
120ns
66-pin,
128K16
SD10
SD12
SD13
SD14
SD15
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MT5C6404
Abstract: 16kx4
Text: MT5C6404 883C 16K x 4 SRAM AUSTIN SEMICONDUCTOR, INC. 16K x 4 SRAM SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, 5962-89692 • MIL-STD-883 22-Pin DIP FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention
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MT5C6404
MIL-STD-883
22-Pin
MIL-STD-883
DS000004
16kx4
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MT5C6404
Abstract: SMD A6
Text: SRAM MT5C6404 Austin Semiconductor, Inc. 16K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • • • A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ Vss SMD 5962-86859 SMD 5962-89692 MIL-STD-883 FEATURES
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MT5C6404
22-Pin
MIL-STD-883
-40oC
-55oC
125oC)
MT5C6804C-35/883C
MT5C6804C-35L/883C
MT5C6804C-45/883C
MT5C6404
SMD A6
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Mil-Std-883 Wire Bond Pull Method 2011
Abstract: No abstract text available
Text: AUSTIN SEMICONDUCTOR INC büE D • TG02117 0000375 ifl? H A U S T 1 MT58C1616 DIE 16K X 16 SYNCHRONOUS SRAM | u iic = n o N - ■ ' P M W . ' ì - ' S MILITARY SRAM DIE 16Kx 16 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES •
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TG02117
MT58C1616
Mil-Std-883 Wire Bond Pull Method 2011
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY l^ iiczn o N 16K LATCHED SRAM X MT56C16K16B2 16 LATCHED SRAM 16K X 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES, BYTE ENABLES • • • • • • • OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 • Packages
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MT56C16K16B2
52-pin
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16Kx32
Abstract: No abstract text available
Text: MT8S1632 16K X 32 SRAM MODULE [M IC R O N SRAM MODULE 16Kx 32 SRAM FEATURES • High speed: 10*, 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions
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MT8S1632
64-Pin
16Kx32
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LT 5251
Abstract: synchronous sram wns marking
Text: MICRON 16K MT58C1616 16 SYNCHRONOUS SRAM X 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • Fast access times: 12,15,20 and 25ns Fast OE: 5, 6, 8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power
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MT58C1616
52-Pin
LT 5251
synchronous sram
wns marking
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Untitled
Abstract: No abstract text available
Text: yÄ . f im-. AUSTIN SEMICONDUCTOR, INC. MILITARY SRAM MT5C6404 883C 1 6Kx 4 SRAM 16K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-86859,-89692 • M IL-STD -883, Class B • Radiation tolerant (consult factory) 22-Pin DIP
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MT5C6404
22-Pin
IL-STD-883
T002117
0000S13
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Untitled
Abstract: No abstract text available
Text: MICRON 16K SYNCHRONOUS SRAM X MT58C1618 18 SYNCHRONOUS SRAM 16K X 18 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • Fast access times: 12,15, 20 and 25ns Fast OE: 5 , 6 , 8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power
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MT58C1618
52-Pin
MT58C1616
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT56LC16K16C3 16K X 16 LATCHED SRAM MICRON 16K X 16 SRAM LATCHED SRAM 3.3V OPERATION ADDRESS/ DATA INPUT LATCHES FEATURES • • • • • • Fast access times: 20 and 25ns Fast OE: 8 and 10ns Single +3.3V +0.3V pow er supply Separate, electrically isolated output buffer power
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MT56LC16K16C3
386SL
52-Pin
MTS6LC16K16C3
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Untitled
Abstract: No abstract text available
Text: MT5LC2818 16K X 18 LATCHED SRAM I^ IIC Z R O N LATCHED SRAM 16K X 18 SRAM 3.3V OPERATION ADDRESS/DATA INPUT LATCHES FEATURES • • • • • PIN ASSIGNMENT Top View Fast access times: 20 and 25ns Fast OE: 8 and 10ns Single +3.3V ±0.3V pow er supply
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MT5LC2818
52-Pin
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Untitled
Abstract: No abstract text available
Text: p iC R ü N 16K LATCHED SRAM X MT5C2818 18 LATCHED SRAM 16K X 18 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 Packages 52-pin PLCC 52-pin PQFP PIN ASSIGNMENT Top View
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MT5C2818
52-Pin
MT5C2816
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Untitled
Abstract: No abstract text available
Text: M IC R O N 16K X MT58C1618 18 SYNCHRONOUS SRAM 16K X 18 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • PIN ASSIGNMENT Top View Fast access times: 12,15, 20 and 25ns Fast OE: 5, 6, 8 and 10ns Single +5V ±10% power supply
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MT58C1618
52-Pin
MT5flC1618
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Untitled
Abstract: No abstract text available
Text: S t~ \ AUSTIN SEMICONDUCTOR, INC. SRAM MT5S6495 83C 16K X 4 SRAM 16K X 4 SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIG NM ENT Top View • SMD 5962-86859 • MIL-STD-883, Class B • R adiation tolerant (consult factory) 24-Pin DIP
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MT5S6495
MIL-STD-883,
24-Pin
IL-STD-883
GDQDS21
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Untitled
Abstract: No abstract text available
Text: I* as IMT5C2516 16K X 16 LATCHED SRAM LATCHED SRAM 16K x 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • • • • • Fast access times: 15,20 and 25ns Fast OE: 6 ,8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power
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IMT5C2516
52-Pin
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Untitled
Abstract: No abstract text available
Text: M IC R O N 16K LATCHED SRAM X MT5C2516 16 LATCHED SRAM 16K x 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • PIN ASSIGNMENT (Top View 52-Pin PLCC (SC-2) 52-Pin PQFP (SC-5) 2 - in illl? OPTIONS MARKING • Timing 12ns access 15ns access
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MT5C2516
52-Pin
MT5C2516EJ-20
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