SRAM 16K Search Results

Dp 140c

Abstract: CY7C006 CY7C016 CY7C025 CY7C0251 JESD22 8361H
Contextual Info: Cypress Semiconductor Qualification Report QTP# 98302 VERSION 1.2 March, 1999 Dual Port SRAM - R28 Technology - Fab 2 CY7C025 8K x 16 Dual Port SRAM CY7C0251 8K x 18 Dual Port SRAM CY7C006 16K x 8 Dual Port SRAM CY7C016 16K x 9 Dual Port SRAM Cypress Semiconductor

Static Random Access Memory SRAM

Abstract: MPC555
Contextual Info: SECTION 20 STATIC RANDOM ACCESS MEMORY SRAM The MPC555 contains two static random access memory (SRAM) modules: a 16Kbyte module and a 10-Kbyte module. The SRAM modules provide the microcontroller unit (MCU) with fast (one cycle access), general-purpose memory. The SRAM can

Static Random Access Memory SRAM

Abstract: MPC555
Contextual Info: SECTION 20 STATIC RANDOM ACCESS MEMORY SRAM The MPC555 contains two static random access memory (SRAM) modules: a 16Kbyte module and a 10-Kbyte module. The SRAM modules provide the microcontroller unit (MCU) with fast (one cycle access), general-purpose memory. The SRAM can

5962-8969001

Abstract: 71256L35L32B 5962-8855201XA 5962-8866201XA 7164S25L32B 5962-8552512XA 71256L70DB 600MIL IDT CERDIP 20 PACKAGE 5962-8670513RA
Contextual Info: SRAM MILITARY SELECTOR GUIDE SRAM Military Offerings Page SRAM Military Selector Guide . 3-6 SRAM Military Selector Guide by SMD Number . 7-9 Obsolete Part List and Replacement Guide . 10

TCAM

Abstract: nP3400 PB3450 nP3450 amcc np3400
Contextual Info: nP3450 Advanced Product Brief 4.4Gbps Integrated Network Processor and Traffic Manager PB3450 / V0.3 / 04/24/2003 • Switched Ethernet Platforms • Ethernet Over SONET/SDH • CPE Equipments, MTU/MDU SRAM SRAM SRAM SRAM/ TCAM Applications Features 24 FE

5962-8866201XA

Abstract: SRAM 64k 5962-8855201XA 5962-8552512YA 5962-8866202XA 5962-8855204XA cerdip 300mil 5962-88740 5962-8552508XA 5962-8866203XA
Contextual Info: SRAM Military Offerings SRAM Military Selector Guide SRAM Military Selector Guide by SMD number Obsolete Part List and replacement Guide May 2005 Page 2-5 6-8 9 SRAM Military Selector Guide (by Part Number) IDT Part Number Package Description 6116LA120DB

CY7C144V

Abstract: CY7C017 CY7C109-VC
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99395 VERSION 1.0 January, 2000 Synchronous/Asynchronous Dual Port SRAM 3.3V and 5V R42HD Technology, Fab 4 Qualification CY7C026(V)/CY7C036(V) 16K x 16/18 Asynchronous DP SRAM CY7C025(V)/CY7C0251(V) 8K x 16/18 Asynchronous DP SRAM

Mil-Std-883 Wire Bond Pull Method 2011

Contextual Info: AUSTIN SEMICONDUCTOR INC büE D • TG02117 0000375 ifl? H A U S T 1 MT58C1616 DIE 16K X 16 SYNCHRONOUS SRAM | u iic = n o N - ■ ' P M W . ' ì - ' S MILITARY SRAM DIE 16Kx 16 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES •

Contextual Info: WSF128K32V-XG2TX 128KX32 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 25ns (SRAM) and 90ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each

Contextual Info: PRELIMINARY l^ iiczn o N 16K LATCHED SRAM X MT56C16K16B2 16 LATCHED SRAM 16K X 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES, BYTE ENABLES • • • • • • • OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 • Packages

16Kx32

Contextual Info: MT8S1632 16K X 32 SRAM MODULE [M IC R O N SRAM MODULE 16Kx 32 SRAM FEATURES • High speed: 10*, 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions

Contextual Info: a WPSF256K32-27PJX M/HITE /MICROELECTRONICS 1MByte of SRAM & 1MByte of FLASH 256Kx32 SRAM/256Kx32 FLASH MODULE ADVANCED* FEATURES • 100,000 Erase/Program Cycles ■ Access Tim es of 25ns SRAM ■ Flexible Sector Architecture • One 8K word, tw o 4K word, one 16K word, and seven 32K

SD10

Abstract: SD12 SD13 SD14 SD15
Contextual Info: WSF128K16V-XH1X 128KX16 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 70ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each

LT 5251

Abstract: synchronous sram wns marking
Contextual Info: MICRON 16K MT58C1616 16 SYNCHRONOUS SRAM X 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • Fast access times: 12,15,20 and 25ns Fast OE: 5, 6, 8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power

Contextual Info: MICRON 16K SYNCHRONOUS SRAM X MT58C1618 18 SYNCHRONOUS SRAM 16K X 18 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • Fast access times: 12,15, 20 and 25ns Fast OE: 5 , 6 , 8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power

Contextual Info: PRELIMINARY MT56LC16K16C3 16K X 16 LATCHED SRAM MICRON 16K X 16 SRAM LATCHED SRAM 3.3V OPERATION ADDRESS/ DATA INPUT LATCHES FEATURES • • • • • • Fast access times: 20 and 25ns Fast OE: 8 and 10ns Single +3.3V +0.3V pow er supply Separate, electrically isolated output buffer power

Contextual Info: MT5LC2818 16K X 18 LATCHED SRAM I^ IIC Z R O N LATCHED SRAM 16K X 18 SRAM 3.3V OPERATION ADDRESS/DATA INPUT LATCHES FEATURES • • • • • PIN ASSIGNMENT Top View Fast access times: 20 and 25ns Fast OE: 8 and 10ns Single +3.3V ±0.3V pow er supply

MT5C6404

Abstract: 16kx4
Contextual Info: MT5C6404 883C 16K x 4 SRAM AUSTIN SEMICONDUCTOR, INC. 16K x 4 SRAM SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, 5962-89692 • MIL-STD-883 22-Pin DIP FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention

Contextual Info: p iC R ü N 16K LATCHED SRAM X MT5C2818 18 LATCHED SRAM 16K X 18 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 Packages 52-pin PLCC 52-pin PQFP PIN ASSIGNMENT Top View

MT5C6404

Abstract: SMD A6
Contextual Info: SRAM MT5C6404 Austin Semiconductor, Inc. 16K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • • • A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ Vss SMD 5962-86859 SMD 5962-89692 MIL-STD-883 FEATURES

Contextual Info: M IC R O N 16K X MT58C1618 18 SYNCHRONOUS SRAM 16K X 18 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • PIN ASSIGNMENT Top View Fast access times: 12,15, 20 and 25ns Fast OE: 5, 6, 8 and 10ns Single +5V ±10% power supply

Contextual Info: S t~ \ AUSTIN SEMICONDUCTOR, INC. SRAM MT5S6495 83C 16K X 4 SRAM 16K X 4 SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIG NM ENT Top View • SMD 5962-86859 • MIL-STD-883, Class B • R adiation tolerant (consult factory) 24-Pin DIP

Contextual Info: I* as IMT5C2516 16K X 16 LATCHED SRAM LATCHED SRAM 16K x 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • • • • • Fast access times: 15,20 and 25ns Fast OE: 6 ,8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power

Contextual Info: M IC R O N 16K LATCHED SRAM X MT5C2516 16 LATCHED SRAM 16K x 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • PIN ASSIGNMENT (Top View 52-Pin PLCC (SC-2) 52-Pin PQFP (SC-5) 2 - in illl? OPTIONS MARKING • Timing 12ns access 15ns access