SR81995C024 Search Results

0QQ011

Contextual Info: IS61C1024H ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM Ja n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns The ISS1 IS61C1024H is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. They are fabricated using ISSI's high-performance CMOS technology. This highly

IS61C1024

Contextual Info: IS61C1024 IS61C1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM august 1995 FEATURES DESCRIPTION • H igh-speed access tim e: 12, 15, 20, 25 ns • Low active pow er: 600 m W typical • Low stan dby pow er: 500 |aW (typical) C M O S sta n d b y The I S S I IS61C1024 and IS61C1024L are very high-speed,

IS62C1024L-55TI

Abstract: IS62C1024L IS62C1024L-35Q IS62C1024L-35T IS62C1024L-35W IS62C1024L-45Q IS62C1024L-45T IS62C1024L-45W
Contextual Info: IS62C1024L IS62C1024L ISSI 128K x 8 LOW POWER CMOS STATIC RAM JULY 1996 ISSI FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 150 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM J a n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns The ISS1 IS61C1024H is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. They are fabricated using ISSI's high-performance CMOS technology. This highly

62C1024

Abstract: IS62C1024 IS62C1024-35Q IS62C1024-35T IS62C1024-35W IS62C1024-45Q IS62C1024-45W
Contextual Info: ISSI ISSI IS62C1024 IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: ISSI IS61C1024H 128K x 8 HIGH-SPEED CMOS STATIC RAM J a n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns The IS61C1024H is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. They are fabricated using/SS/'s high-performance CMOS technology. This highly

Contextual Info: ISSI IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process

IS62C1024

Abstract: IS62C1024-35Q IS62C1024-35T IS62C1024-35W IS62C1024-45Q IS62C1024-45T IS62C1024-45W 525mil
Contextual Info: IS62C1024 IS62C1024 ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1996 ISSI FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

IS61C1024H-15J

Abstract: IS61C1024H-15K IS61C1024H-20J IS61C1024H-20K IS61C1024H-25J IS61C1024H-25K
Contextual Info: ISSI ISSI IS61C1024H IS61C1024H 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 15, 20, 25 ns • Low active power: 750 mW typical • Low standby power: 2 mW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications

IS61C1024

Abstract: 102420M IS61C1024-15
Contextual Info: ISSI IS61C1024 IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM august 1995 FEATURES DESCRIPTION • H ig h -s p e e d a c c e s s tim e : 12, 15, 2 0 , 2 5 ns • L o w a c tiv e p o w e r: 6 0 0 m W ty p ic a l The I S S I IS61C 1024 and IS61C 1024L are very high-speed,

IS61C1024

Abstract: IS61C1024-15M IS61C1024-20N IS61C1024-12JR IS61C1024-12KR IS61C1024-12MR IS61C1024-12NR IS61C1024-12TR IS61C1024L IS61C1024-15N
Contextual Info: IS61C1024 IS61C1024 IS61C1024L IS61C1024L ISSI ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600 mW typical • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: 128K x 8 LOW POWER CMOS STATIC RAM JULY 1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns T h e ¡SSI IS 62C 1024L is a low p o w e r,131,0 7 2-w ord by 8-bit C M O S s ta tic R A M . It is fa b ric a te d u sin g ISSI's h ig h perform ance C M O S technology. T h is highly reliable process

Contextual Info: IS62C1024 m 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1996 FEATURES t DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 500 fiW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

IS62C1024L-35T

Abstract: IS62C1024L-35W IS62C1024L-45Q IS62C1024L-45T IS62C1024L-45W IS62C1024L IS62C1024L-35Q
Contextual Info: IS62C1024L IS62C1024L ISSI 128K x 8 LOW POWER CMOS STATIC RAM JULY 1996 ISSI FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 150 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

UEI 20 SP

Contextual Info: ISSI IS62C1024L 128K x 8 LOW POWER CMOS STATIC RAM july 1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns T h e I S S I IS 6 2 C 1 0 2 4 L is a lo w p o w e r,1 3 1 ,0 7 2 -w o rd b y 8 -b it • Low active power: 45 0 m W typical •