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    tsd 1196

    Abstract: IS61LV3216
    Text: ISSI IS61LV3216 ISSI IS61LV3216 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 12, 15, and 17 ns • CMOS low power operation — 150 mW typical operating — 150 µW (typical) standby • TTL compatible interface levels • Single 2.7V to 3.6V power supply


    Original     		PDF IS61LV3216 44-pin 400-mil IS61LV3216 SR1295LV3216 tsd 1196

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV3216 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 10, 12, 15, and 20 ns The • CMOS low power operation ISSl ADV^ . ^ F°R^ T'0N IS 6 1 L V 3 2 1 6 is a h ig h -s p e e d , 5 1 2 K s ta tic R A M o rg a n iz e d a s 3 2 ,7 6 8 w o rd s b y 16 bits. It is fa b ric a te d u s in g


    OCR Scan     		PDF IS61LV3216 44-pin 400-mil SR1295LV3216

    Untitled

    Abstract: No abstract text available
    Text: IS61LV3216 ISSI 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES ADVA^ ' ^ F° ÎTI0N DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 150 mW typical operating — 150 fiW (typical) standby • TTL compatible interface levels


    OCR Scan     		PDF IS61LV3216 IS61LV3216 SR1295LV3216