SR010TR
Abstract: SR010 204D BCD8
Text: SWITCHES ROTARY, Encoded, Surface Mount EXCEL type ERD A range of miniature, surface mount, rotary switches with BCD or hexadecimal encoding. Screwdriver adjustment with gold plated contacts housed in black moulded bodies, flame retardant to UL94V-0. Fully sealed construction. Choice of stick or tape and reel packaging.
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UL94V-0.
SR008
SR010
SR016
SR008TR
SR010TR
SR016TR
SR010TR
SR010
204D
BCD8
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DIODE marking CK 6CA
Abstract: DIODE marking 7BA SG 6CA 6ca DIODE code 20c 7ba Diode HP5 637 409 SG 5BA MARKING CO5 sg 7ba ai cm1 100 1e8
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M306H1SFP
DIODE marking CK 6CA
DIODE marking 7BA
SG 6CA
6ca DIODE
code 20c 7ba
Diode HP5 637 409
SG 5BA
MARKING CO5
sg 7ba
ai cm1 100 1e8
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tcxo 13MHz
Abstract: SA7016 SA7016DH SR00602 TSSOP16
Text: INTEGRATED CIRCUITS SA7016 1.3GHz low voltage fractional-N synthesizer Product specification Supersedes data of 1999 Apr 20 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 GENERAL DESCRIPTION
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SA7016
SA7016
tcxo 13MHz
SA7016DH
SR00602
TSSOP16
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SR01800
Abstract: SA7026 SA7026DH SR00602
Text: INTEGRATED CIRCUITS SA7026 1.3GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1999 Apr 16 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 1.3GHz low voltage fractional-N dual synthesizer
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SA7026
SA7026
SR01800
SA7026DH
SR00602
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Untitled
Abstract: No abstract text available
Text: ISSI IS61LV3224 32K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 9, 10, 12, 15 ns • CMOS low power operation ❑ 594 mW max. operating @ 9 ns ❑ 36 mW (max.) CMOS standby • TTL compatible interface levels • Single 3.3V power supply
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IS61LV3224
100-pin
IS61LV3224
IS61LV3224-9TQ
IS61LV3224-9TQI
IS61LV3224-10TQ
IS61LV3224-10TQI
IS61LV3224-12TQ
IS61LV3224-12TQI
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY advance ,NFo r m a t , o n J U L Y ,997 FEATURES DESCRIPTION • High-speed access time: 10, 12, 15 ns The IS S IIS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process
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IIS61LV12824
SR016-0F
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datesheet grade 8
Abstract: 10th datesheet automobile datesheet b.a datesheet ba 1st year datesheet M306H5FGFP MA 2nd year IT datesheet up board datesheet 12 272bi TRANSISTOR BJ 131-6
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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REJ03B0095-0100Z
M306H5MG-XXXFP/MC-XXXFP/FGFP
M306H5
M306H3"
datesheet grade 8
10th datesheet
automobile datesheet
b.a datesheet
ba 1st year datesheet
M306H5FGFP
MA 2nd year IT datesheet
up board datesheet 12
272bi
TRANSISTOR BJ 131-6
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Untitled
Abstract: No abstract text available
Text: SR01632 512K x 32 Low Power Static RAM 1.5V Core VDD Features • ■ ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read Cycle Times Typical ≤20ns Worst case ≤ 25ns Write Cycle Times Typical ≤ 9ns Worst case ≤ 12ns
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HLXSR01632
1x10-12
5x10-12
150nm
N40-1497-000-000
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SA8026
Abstract: SA8026DH SR00602
Text: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1999 Mar 08 Philips Semiconductors 1999 Apr 16 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N dual frequency
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SA8026
SA8026
SA8026DH
SR00602
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REJ03B0152-0210
Abstract: 006F16 100P6S-A M306H7FGFP SMI-50 SR04F NXP P60 CRC43 Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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ir remote control transmitter ABC T2
Abstract: SRF 7016 TRANSISTOR BJ 131-6 03F9 Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SA8026
Abstract: SA8026DH SR00602
Text: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional–N dual frequency synthesizer Preliminary specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 13 Philips Semiconductors Preliminary specification 2.5GHz low voltage fractional–N dual synthesizer
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SA8026
SA8026
SA8026DH
SR00602
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Untitled
Abstract: No abstract text available
Text: SR01608 SR01608 2M x 8 STATIC RAM The monolithic, radiation hardened 16M bit Static proprietary design, layout and process hardening Random Access Memory SRAM in a 2M x 8 techniques. There is no internal EDAC implemented. configuration is a high performance 2,097,152 word x
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HXSR01608
HXSR01608
150nm
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HLXSR01632
Abstract: No abstract text available
Text: SR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low
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HLXSR01632
32-bit
150nm
ADS-14217
HLXSR01632
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nec p181
Abstract: SRF 7016 transistor f422 equivalent DVD read writer circuit diagram led clock circuit diagram Nippon capacitors
Text: M306H3MC-XXXFP/FCFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with DATA ACQUISITION CONTROLLER REJ03B0086-0100Z Rev.1.00 2004.03.23 1. DESCRIPTION The M306H3MC-XXXFP/FCFP is single-chip microcomputer using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and is packaged in a 116-pin plastic molded QFP. This
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M306H3MC-XXXFP/FCFP
16-BIT
REJ03B0086-0100Z
M306H3MC-XXXFP/FCFP
M16C/60
116-pin
nec p181
SRF 7016
transistor f422 equivalent
DVD read writer circuit diagram
led clock circuit diagram
Nippon capacitors
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tcxo philips
Abstract: philips pocket radio 19.44MHz TCXO philips tcxo SA8016 SA8016DH SA8016WC SR00602 TSSOP16
Text: INTEGRATED CIRCUITS SA8016 2.5GHz low voltage fractional-N synthesizer Product specification Supersedes data of 1999 Apr 16 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N synthesizer SA8016 GENERAL DESCRIPTION
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SA8016
SA8016
tcxo philips
philips pocket radio
19.44MHz TCXO
philips tcxo
SA8016DH
SA8016WC
SR00602
TSSOP16
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TSF-7070
Abstract: AWG MARKING CODE SOT23-5 EE19 type bobbin 29AWG circuit diagram of battery charger smps CTX22 EE19 cooper MUR160 SA58605 SA58605D
Text: INTEGRATED CIRCUITS SA58605 Dual operational amplifier and 2.5 V shunt regulator Product data Philips Semiconductors 2002 Mar 25 Philips Semiconductors Product data Dual operational amplifier and 2.5 V shunt regulator SA58605 DESCRIPTION The SA58605 incorporates two op amps and 2.5 V shunt regulator
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SA58605
SA58605
TSF-7070
AWG MARKING CODE SOT23-5
EE19 type bobbin
29AWG
circuit diagram of battery charger smps
CTX22
EE19 cooper
MUR160
SA58605D
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M306H5MG-XXXFP
Abstract: No abstract text available
Text: M306H5MG-XXXFP/MC-XXXFP/FGFP SNGLE-CHIP 16-BIT CMOS MICROCOMPUTER with DATA ACQUISITION CONTROLLER REJ03B0095-0100Z Rev.1.00 Jan 19, 2005 1. DESCRIPTION The M306H5MG/MC-XXXFP and M306H5FGFP are single-chip microcomputers using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and is packaged in a 116-pin plastic
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M306H5MG-XXXFP/MC-XXXFP/FGFP
16-BIT
REJ03B0095-0100Z
M306H5MG/MC-XXXFP
M306H5FGFP
M16C/60
116-pin
Unit2607
M306H5MG-XXXFP
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1998 Feb 08 Philips Semiconductors 1999 Mar 08 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N dual frequency
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SA8026
SA8026
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5BW45
Abstract: SA1630 SA1530
Text: m m M n I SA1630 IF quadrature transceiver 1998 Feb 17 Product specification IC17 Data Handbook Philips Semiconductors PHtUPS PHILIPS Philips Semiconductors Product specification IF quadrature transceiver SA1630 DESCRIPTION • Internal IF PLL for synthesizing the local IF oscillator signal.
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SA1630
SA1630
5BW45
SA1530
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification 2.5GHz low voltage fractional-N dual synthesizer FEATURES SA8026 The synthesizer operates at VCO input frequencies up to 2.5 GHz. The synthesizer has fully programmable main, auxiliary and reference dividers. All divider ratios are supplied via a 3-wire serial
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SA8026
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116-Pin
Abstract: pal 005a DL000D mitsubishi split ac M306H2FCFP M306H2MC-XXXFP
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M306H2MC-XXXFP
M306H2FCFP.
M306H2FCFP
116-Pin
pal 005a
DL000D
mitsubishi split ac
M306H2FCFP
M306H2MC-XXXFP
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DL000D
Abstract: M306H2FCFP M306H2MC-XXXFP SR0040
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M306H2
M306H2FCFP
M306H2MC-XXXFP
DL000D
SR0040
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