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    SQD40 Price and Stock

    Vishay Siliconix SQD40081EL_GE3

    MOSFET P-CH 40V 50A TO252AA
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    DigiKey SQD40081EL_GE3 Cut Tape 8,267 1
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    SQD40081EL_GE3 Digi-Reel 8,267 1
    • 1 $1.91
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    SQD40081EL_GE3 Reel 6,000 2,000
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    New Advantage Corporation SQD40081EL_GE3 100,000 1
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    Vishay Siliconix SQD40052EL_GE3

    AUTOMOTIVE N-CHANNEL 40 V (D-S)
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    DigiKey SQD40052EL_GE3 Digi-Reel 5,916 1
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    SQD40052EL_GE3 Cut Tape 5,916 1
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    SQD40052EL_GE3 Reel 2,000 2,000
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    Vishay Siliconix SQD40N06-14L_GE3

    MOSFET N-CH 60V 40A TO252AA
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    DigiKey SQD40N06-14L_GE3 Digi-Reel 5,822 1
    • 1 $2.43
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    SQD40N06-14L_GE3 Cut Tape 5,822 1
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    SQD40N06-14L_GE3 Reel 4,000 2,000
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    New Advantage Corporation SQD40N06-14L_GE3 2,000 1
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    Vishay Siliconix SQD40N10-25_GE3

    MOSFET N-CH 100V 40A TO252
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    DigiKey SQD40N10-25_GE3 Digi-Reel 2,823 1
    • 1 $6.98
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    SQD40N10-25_GE3 Cut Tape 2,823 1
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    Vishay Siliconix SQD40P10-40L_GE3

    MOSFET P-CH 100V 38A TO252AA
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    DigiKey SQD40P10-40L_GE3 Digi-Reel 2,698 1
    • 1 $3.46
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    SQD40P10-40L_GE3 Cut Tape 2,698 1
    • 1 $3.46
    • 10 $2.26
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    SQD40P10-40L_GE3 Reel 2,000 2,000
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    SQD40 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQD40020E_GE3 Vishay Siliconix MOSFET N-CH 40V 100A TO252AA Original PDF
    SQD40020EL_GE3 Vishay Siliconix MOSFET N-CH 40V 100A TO252AA Original PDF
    SQD40030E_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 40V TO252AA Original PDF
    SQD40031EL_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 30V Original PDF
    SQD40052EL_GE3 Vishay Siliconix AUTOMOTIVE N-CHANNEL 40 V (D-S) Original PDF
    SQD40061EL_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 40V Original PDF
    SQD40061EL-T4_GE3 Vishay Siliconix P-CHANNEL 40-V (D-S) 175C MOSFET Original PDF
    SQD40081EL_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 40V TO252 Original PDF
    SQD400AA100 SanRex TRANSISTOR MODULE Original PDF
    SQD400AA120 SanRex TRANSISTOR MODULE Original PDF
    SQD400BA60 SanRex TRANSISTOR MODULE Original PDF
    SQD40131EL_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 40V D-S TO-252 Original PDF
    SQD40N04-10A-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 42A TO252 Original PDF
    SQD40N06-14L_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 40A Original PDF
    SQD40N06-14L-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 40A TO-252 Original PDF
    SQD40N06-14L_T4GE3 Vishay Siliconix MOSFET N-CH 60V 40A TO252AA Original PDF
    SQD40N10-25_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 40A TO252 Original PDF
    SQD40N10-25-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A TO252 Original PDF
    SQD40N10-25-T4_GE3 Vishay Siliconix MOSFET N-CH 100V 40A TO252AA Original PDF
    SQD40P10-40L_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 100V TO252 Original PDF

    SQD40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC A 3120

    Abstract: Transistor AC 51 bx transistor a 3120 ic VCEX1000V SQD400AA100 derating factor
    Text: TRANSISTOR MODULE SQD400AA100 UL;E76102 (M) SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    Original
    PDF SQD400AA100 E76102 SQD400AA100 113max. 100msec10sec 1msec100msec VCC600V IC A 3120 Transistor AC 51 bx transistor a 3120 ic VCEX1000V derating factor

    Untitled

    Abstract: No abstract text available
    Text: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A)


    Original
    PDF SQD40N04-10A AEC-Q101 2002/95/EC O-252 SQD40N04-10A-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    69064

    Abstract: No abstract text available
    Text: SQD40N10-25 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A) • TrenchFET Power MOSFET


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    PDF SQD40N10-25 AEC-Q101 2002/95/EC O-252 O-252 SQD40N10-25-GE3 18-Jul-08 69064

    Untitled

    Abstract: No abstract text available
    Text: SQD40N10-25_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF SQD40N10-25 AN609, 2157m 8491m 1949m 0253m 5519m 6099m 1395m 24-May-11

    Untitled

    Abstract: No abstract text available
    Text: SQD40P10-40L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    PDF SQD40P10-40L AN609, 6507m 9445m 7808m 3114m 5951m 0415m 9189m 4277m

    Untitled

    Abstract: No abstract text available
    Text: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A)


    Original
    PDF SQD40N04-10A AEC-Q101 2002/95/EC O-252 SQD40N04-10A-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A) • Package with Low Thermal Resistance


    Original
    PDF SQD40N10-25 AEC-Q101 O-252 SQD40N10-25-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A)


    Original
    PDF SQD40N04-10A AEC-Q101 2002/95/EC O-252 O-252 SQD40N04-10A-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A)


    Original
    PDF SQD40N10-25 AEC-Q101 2002/95/EC O-252 O-252 SQD40N10-25-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A)


    Original
    PDF SQD40N04-10A AEC-Q101 2002/95/EC O-252 O-252 SQD40N04-10A-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SQD40N04-10A Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original
    PDF SQD40N04-10A AEC-Q101 2002/95/EC O-252 O-252 SQD40N04-10A-GE3 11-Mar-11

    SQD40N06-14L

    Abstract: No abstract text available
    Text: SQD40N06-14L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original
    PDF SQD40N06-14L AEC-Q101 2002/95/EC O-252 O-252 SQD40N06-14L-GE3 18-Jul-08 SQD40N06-14L

    SQD40P10-40L

    Abstract: mosfet 4433
    Text: SQD40P10-40L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) - 100 RDS(on) () at VGS = - 10 V 0.040 • TrenchFET Power MOSFET RDS(on) () at VGS = - 4.5 V


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    PDF SQD40P10-40L AEC-Q101 2002/95/EC O-252 O-252 SQD40P10-40L-GE3 11-Mar-11 SQD40P10-40L mosfet 4433

    Untitled

    Abstract: No abstract text available
    Text: SQD40N04-10A Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 40 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.010 ID (A) Configuration COMPLIANT Single AEC-Q101 RELIABILITY • Passed all AEC-Q101 Reliability Testing


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    PDF SQD40N04-10A AEC-Q101 O-252 SQD40N04-10A-GE3 18-Jul-08

    SQD40P10

    Abstract: SQD40P10-40L-GE3 4433 mosfet mosfet 4433 SQD40P10-40L SQD40P10-40
    Text: SQD40P10-40L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) - 100 RDS(on) () at VGS = - 10 V 0.040 • TrenchFET Power MOSFET RDS(on) () at VGS = - 4.5 V


    Original
    PDF SQD40P10-40L AEC-Q101 2002/95/EC O-252 O-252 SQD40P10-40L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SQD40P10 SQD40P10-40L-GE3 4433 mosfet mosfet 4433 SQD40P10-40L SQD40P10-40

    Untitled

    Abstract: No abstract text available
    Text: SQD40N10-25 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A) • TrenchFET Power MOSFET


    Original
    PDF SQD40N10-25 AEC-Q101 2002/95/EC O-252 O-252 SQD40N10-25-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQD40P10-40L www.vishay.com Vishay Siliconix P-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SQD40P10-40L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SQD40N10-25-GE3

    Abstract: No abstract text available
    Text: SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A) • Package with Low Thermal Resistance


    Original
    PDF SQD40N10-25 AEC-Q101 O-252 O-252 SQD40N10-25-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQD40N10-25-GE3

    Untitled

    Abstract: No abstract text available
    Text: SQD40N06-14L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd 60 RDS(on) () at VGS = 10 V 0.014 RDS(on) () at VGS = 4.5 V


    Original
    PDF SQD40N06-14L AEC-Q101 O-252 O-252 SQD40N06-14L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQD40N06-14L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF SQD40N06-14L AN609, 8177m 9346m 9512m 8745m 9678u 4101m 4181m 9231u

    SQD400AA120

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQD400AA120 UL;E76102 (M) SQD400AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    Original
    PDF SQD400AA120 E76102 SQD400AA120 113max.

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQD40N10-25 www.vishay.com Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SQD40N10-25 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    702 TRANSISTOR

    Abstract: SQD400AA100
    Text: TRANSISTOR MODULE SQD400AA100 UL;E76102 (M) SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    Original
    PDF SQD400AA100 E76102 SQD400AA100 113max. 100msec10sec 1msec100msec VCC600V 702 TRANSISTOR

    S11092

    Abstract: No abstract text available
    Text: SQD40P10-40L Vishay Siliconix Automotive P-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () at VGS = - 10 V 0.040 RDS(on) () at VGS = - 4.5 V 0.048 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF SQD40P10-40L 2002/95/EC AEC-Q101 O-252 O-252 SQD40P10-40L-GE3 11-Mar-11 S11092