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Vishay Siliconix SQ3460EV-T1_GE3 MOSFET N-CH 20V 8A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SQ3460EV-T1_GE3	Cut Tape	1,053		1	1 $1.55 10 $0.977 100 $1.55 1000 $0.46613 10000 $0.46613	Buy Now
	SQ3460EV-T1_GE3	Digi-Reel	1,053		1	1 $1.55 10 $0.977 100 $1.55 1000 $0.46613 10000 $0.46613	Buy Now
	SQ3460EV-T1_GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.40897	Buy Now
Vishay Intertechnologies SQ3460EV-T1_GE3 Trans MOSFET N-CH 20V 8A 6-Pin TSOP T/R - Tape and Reel (Alt: SQ3460EV-T1_GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SQ3460EV-T1_GE3	Reel		15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.36162	Buy Now
	SQ3460EV-T1_GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	SQ3460EV-T1_GE3		3,044			1 $1.22 10 $0.823 100 $0.574 1000 $0.425 10000 $0.367	Buy Now
Newark	SQ3460EV-T1_GE3	Cut Tape	970		1	1 $1.04 10 $0.861 100 $0.682 1000 $0.682 10000 $0.682	Buy Now
	SQ3460EV-T1_GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.391	Buy Now
Vishay Intertechnologies SQ3460EV-T1-GE3 MOSFETs RECOMMENDED ALT SQ34
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SQ3460EV-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.386	Buy Now

SQ3460EV Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SQ3460EV-T1_GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 8A 6TSOP		Original	PDF
SQ3460EV-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 6TSOP		Original	PDF

SQ3460EV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: SQ3460EV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	SQ3460EV AN609, 5052u 3918u 0623m 6358m 7809m 7880m 4197m 03-Jan-11
Untitled Abstract: No abstract text available Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: SQ3460EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.026 RDS(on) () at VGS = 2.5 V 0.032 RDS(on) () at VGS = 1.8 V 0.036 ID (A) 8 Configuration Single TSOP-6 Top V iew	Original	PDF	SQ3460EV 2002/95/EC AEC-Q101 SQ3460EV-T1-GE3 18-Jul-08
TSOP 48 thermal resistance junction to case Abstract: No abstract text available Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP 48 thermal resistance junction to case
Untitled Abstract: No abstract text available Text: SPICE Device Model SQ3460EV www.vishay.com Vishay Siliconix SPICE Device Model SQ3460EV DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SQ3460EV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
67037 Abstract: No abstract text available Text: SQ3460EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration Single TSOP-6 Top V iew	Original	PDF	SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 18-Jul-08 67037
Untitled Abstract: No abstract text available Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
DPAK/TO-252 Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the	Original	PDF	Ups-2726 VMN-PL0469-1311 DPAK/TO-252
SQJ469ep Abstract: SQ4483BE Text: Vishay Intertechnology, Inc. AEC-Q101 QUALIFIED SQ RUGGED SERIES MOSFET s ThunderFET ≥ 100 V, Low On-Resistance and Low FOM OPTIMIZED PowerPAK® SO-8L Optimum High and Low Side Combination in a 5 mm x 6 mm Package for Synchronous Buck PowerPAK SO-8L 1/2 the Size of	Original	PDF	AEC-Q101 AEC-Q101 TS-16949 VMN-MS6925-1406 SQJ469ep SQ4483BE
sq4435 Abstract: SQP120N10-09 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.	Original	PDF	VMN-PL0469-1505 sq4435 SQP120N10-09
SQ2315ES Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10 Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects	Original	PDF	AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
VMN-SG2151-1406 Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param	Original	PDF	AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406

SQ3427 Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 Text: V i s h ay I n terte c h n olo g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ • Application notes: http://www.vishay.com/mosfets/automotive-mosfets/	Original	PDF	AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309