SPS-442 SERIES Search Results

SPS-442-1-E

Abstract: SPS-442-1 SPS-442 Series SPS-442-6-E sanyo infrared led lamp
Contextual Info: Ordering number : ENN6048 SPS-442 Series SPS-442 Series Receiver Pre-amp Module for Infrared Remote Control Features • This is an unified module consisting of a PIN photodiode and receiver pre-amp IC. It is a compact type, not necessary to mount outer part, and provides low voltage and low power consumption.

Contextual Info: Advance Information MPC8245ARZUPNS Rev. 0.1, 9/2003 MPC8245 Part Number Specification for the MPC8245ARZUnnnX Series Motorola Part Numbers Affected: MPC8245ARZU400D MPC8245ARZU466D This document describes part-number-specific changes to recommended operating conditions

MPC8245

Contextual Info: Advance Information MPC8245ARZUPNS Rev. 1.0, 11/2003 MPC8245 Part Number Specification for the MPC8245ARZUnnnX Series Motorola Part Numbers Affected: MPC8245RZU400D MPC8245ARZU400D MPC8245ARZU466D This document describes part-number-specific changes to recommended operating conditions

MPC8240

Abstract: MPC8245
Contextual Info: Freescale Semiconductor, Inc. Advance Information MPC8245RZUPNS/D Rev. 0, 3/2002 Freescale Semiconductor, Inc. MPC8245 Part Number Specification for the XPC8245RZUnnnx Series Motorola Part Numbers Affected: XPC8245RZU400B This document describes part-number-specific changes to recommended operating conditions

Contextual Info: Freescale Semiconductor, Inc. Advance Information MPC8245RZUPNS/D Rev. 0, 3/2002 MPC8245 Part Number Specification for the XPC8245RZUnnnx Series Freescale Semiconductor, Inc. G:\NCSG\CPD\Apps Docs\PowerPC Documents\MPC8xxx_107\Hardware Specs\8241_45 HW Specs\Part Number Spec\8245\MP8245RZUPNS.fm

MPC8240

Abstract: MPC8245
Contextual Info: Advance Information MPC8245RZUPNS/D Rev. 0, 3/2002 MPC8245 Part Number Specification for the XPC8245RZUnnnx Series G:\NCSG\CPD\Apps Docs\PowerPC Documents\MPC8xxx_107\Hardware Specs\8241_45 HW Specs\Part Number Spec\8245\MP8245RZUPNS.fm Motorola Part Numbers Affected:

MPC8240

Abstract: MPC8245
Contextual Info: Advance Information MPC8245RZUPNS/D Rev. 0, 3/2002 MPC8245 Part Number Specification for the XPC8245RZUnnnx Series Motorola Part Numbers Affected: XPC8245RZU400B This document describes part-number-specific changes to recommended operating conditions and revised electrical specifications, as applicable, from those described in the general

TRW POWER

Abstract: 1112n7c ee series ferrite transformer TDC1112 TDC1112R3CX 21341A HP8568
Contextual Info: IV 0 5 »91 TDC1112 Monolithic D/A Converter Features 12-Bit, 50MSPS 12ns Settling Time to 0.1%, 70dB SFDR • 12-Bit Resolution • 50MSPS Data Rate • ECL Inputs The TDC1112 is an ECL compatible, 12-bit monolithic D/A converter capable of converting digital data into an

942-M96-S0052

Abstract: 942-M3A-2D-1G1-65E
Contextual Info: PK 104091-11 942-M0/3A-2D-1G1-65E/130E/180E/220S/300E/M96 Ultrasonic Distance Sensor Ultraschall Abstandssensor Capteurs Ultrasoniques ! WARNING ! PERSONAL INJURY DO NOT USE these products as safety or emergency stop devices, or in any other application where failure

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

93F2975

Abstract: transistor WB1
Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

Contextual Info: MOTOROLA O rder this docum ent by M MDF3N06HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 60 VOLTS RDS on = 100 m il Dual HDTMOS are an advanced series of pow er MOSFETs

A113

Abstract: MRF9060MBR1 MRF9060MR1 95F786
Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

TRANSISTOR BC 157

Abstract: transistors BC 458 pdf on BC 187 TRANSISTOR Z80 CPU DIMENSIONS TRANSISTOR BC 158 BC 458 transistor BC 458 Z80 instruction set BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 141
Contextual Info: eZ80 CPU User Manual UM007712-0503 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com PRELIMINARY eZ80® CPU User Manual This publication is subject to replacement by a later edition. To determine whether a later

bc 408 equivalent

Abstract: Z80S A79b eZ80 CPU User Manual EWS300-24 instruction manual
Contextual Info: eZ80 CPU User Manual UM007711-0103 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com PRELIMINARY eZ80® CPU User Manual This publication is subject to replacement by a later edition. To determine whether a later

CS50116

Contextual Info: NUCLEAR ULTROL CLASS 1E & NON-SAFETY CABLES F E B R U A R Y 2 0 11 Nuclear power plants require higher-quality cables that meet stringent Nuclear Regulatory Commission Standards. For more than three decades, General Cable has answered the needs of the nuclear power market with cables for power generation, transmission and distribution worldwide. All

crystal s783

Abstract: GK266 GK266 V3
Contextual Info: Product specification Philips Semiconductors FLEX Pager Decoder PCD5008 8.7.7 8.7.8 8.7.9 8.8 8.8.1 8.8.2 8.8.3 8.8.4 8.8.5 8.8.6 8.8.7 Configuration of assigned frames and pager collapse ID = 20H to 27H Configuration of assigned phase Call data packets

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

A113

Abstract: MRF9060MBR1 MRF9060MR1
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9030MBR1

Abstract: MRF9030MR1 100B7R5JP
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

RF-35-0300

Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360
Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices