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04n60s5 Abstract: No abstract text available Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.95 Ω • Optimized capacitances	Original	PDF	SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 04n60s5
04n60s5 Abstract: SPB04N60S5 SPP04N60S5 Text: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated	Original	PDF	SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 SPPx6N60S5/SPBx6N60S5 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5
SPB04N60S5 Abstract: 04N60S5 SPP04N60S5 04N60 Text: SPP04N60S5 SPB04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	PDF	SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 SPP04N60S5 P-TO220-3-1 P-TO263-3-2 04N60S5 Q67040-S4200 SPB04N60S5 04N60S5 04N60
04N60S5 Abstract: SPB04N60S5 SPP04N60S5 Text: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-TO220-3-1 04N60S5 Q67040-S4200 P-TO263-3-2 SPP04N60S5 04N60S5 SPB04N60S5
Untitled Abstract: No abstract text available Text: SIEM EN S SPPX6N60S5 SPBX6N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPTG5164 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPPX6N60S5 Vfas 600 V b 11.3 A f lDSion	OCR Scan	PDF	SPPX6N60S5 SPBX6N60S5 VPTG5164 SPBX6N60S5 X6N60S5 P-T0220-3-1 P-T0263-3-2
04n60s5 Abstract: transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dvfdt rated • Optimized capacitances □ C O L ^ M O S fc P o w e r S e m ic o n d u c to r s	OCR Scan	PDF	SPPx6N60S5/SPBx6N60S5 SPP04N60S5 SPB04N60S5 P-T0220-3-1 P-T0263-3-2 04N60S5 04N60S5 Q67040-S4200 transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF
FAG 32 diode Abstract: No abstract text available Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	PDF	SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-T0220-3-1 04N60S5 Q67040-S4200 P-T0263-3-2 FAG 32 diode