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    SPP8 Price and Stock

    Infineon Technologies AG SPP80P06PHXKSA1

    MOSFET P-CH 60V 80A TO220-3
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    DigiKey SPP80P06PHXKSA1 Tube 3,518 1
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    Quest Components SPP80P06PHXKSA1 15
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    3M Interconnect SPP8

    SCOTCH-BRITE SURFACE PREPARATION
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    DigiKey SPP8 Bulk 25
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    Altech Corporation 3PSPP820

    PUSH BUTTONECONOMY 22MMMAIN. FLU
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    DigiKey 3PSPP820 Bulk 1
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    TestEquity LLC 3PSPP820
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    Altech Corporation 3PSPP802

    PUSH BUTTONECONOMY 22MMMAIN. FLU
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    DigiKey 3PSPP802 Bulk 1
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    Mouser Electronics 3PSPP802
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    TestEquity LLC 3PSPP802
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    Rochester Electronics LLC SPP80N06S209

    N-CHANNEL POWER MOSFET
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    DigiKey SPP80N06S209 Bulk 400
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    Find more SPP8 price and stock on Findchips.com

    SPP8 Datasheets (89)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP80N03 Infineon Technologies SIPMOS Power Transistor Original PDF
    SPP80N03 Siemens Original PDF
    SPP80N03 Siemens SIPMOS Power Transistor Original PDF
    SPP80N03 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP80N03L Infineon Technologies SIPMOS Power Transistor Original PDF
    SPP80N03L Infineon Technologies SIPMOS Power Transistor Original PDF
    SPP80N03L Siemens Original PDF
    SPP80N03L Siemens Original PDF
    SPP80N03L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP80N03S203 Infineon Technologies SIPMOS Power Transistor Original PDF
    SPP80N03S2-03 Infineon Technologies OptiMOS Buck converter Original PDF
    SPP80N03S2-03 Infineon Technologies OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL Original PDF
    SPP80N03S2-03 Unknown OptiMOS Power Amplifier, 30V 80A 300W, MOS-FET N-Channel enhanced Original PDF
    SPP80N03S2L03 Infineon Technologies SIPMOS Power Transistor Original PDF
    SPP80N03S2L-03 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPP80N03S2L-03 Infineon Technologies OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A 30V LL 3,1 mOhm Original PDF
    SPP80N03S2L-04 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPP80N03S2L-04 Unknown OptiMOS Power Amplifier, 30V 80A 178W, MOS-FET N-Channel enhanced Original PDF
    SPP80N03S2L04AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 80A TO-220 Original PDF
    SPP80N03S2L-05 Infineon Technologies OptiMOS Power-Transistor Original PDF

    SPP8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPP80P06P H

    Abstract: SPP80P06PH spp80p06p PG-TO22
    Text: SPP80P06P H SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current • dv/dt rated


    Original     		PDF SPP80P06P IEC61249-2-21 PG-TO220-3 25the 726-SPP80P06PH SPP80P06P H SPP80P06PH PG-TO22

    2N03L05

    Abstract: 154W SPB80N03S2L-05 SPP80N03S2L-05
    Text: SPP80N03S2L-05 SPB80N03S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 5 mΩ ID 80 A P-TO263-3-2 • Low on-resistance RDS(on) P-TO220-3-1 • Excellent Gate Charge x RDS(on) product (FOM)


    Original     		PDF SPP80N03S2L-05 SPB80N03S2L-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4033 2N03L05 P-TO263-3-2 2N03L05 154W SPB80N03S2L-05 SPP80N03S2L-05

    SMD DIODE 615 200A

    Abstract: 2N0303 SPB80N03S2-03 SPP80N03S2-03
    Text: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3.1 m ID 80 A P-TO263-3-2 Type


    Original     		PDF SPP80N03S2-03 SPB80N03S2-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4247 2N0303 P-TO263-3-2 SMD DIODE 615 200A 2N0303 SPB80N03S2-03 SPP80N03S2-03

    2N03L06

    Abstract: s4089 SPB80N03S2L-06 SPI80N03S2L-06 SPP80N03S2L-06 OPTIMOS
    Text: Preliminary data SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) P-TO262-3-1 VDS 30 RDS(on) max. SMD version 5.9 m ID 80


    Original     		PDF SPI80N03S2L-06 SPP80N03S2L-06 SPB80N03S2L-06 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N03S2L-06 Q67042-S4088 2N03L06 2N03L06 s4089 SPB80N03S2L-06 SPI80N03S2L-06 OPTIMOS

    DIODE H5 SMD

    Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package


    Original     		PDF SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, DIODE H5 SMD 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5

    2N06L06

    Abstract: DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a
    Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 6.3 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated


    Original     		PDF SPP80N06S2L-06 SPB80N06S2L-06 Q67060-S6033 Q67060-S6034 2N06L06 BSPP80N06S2L-06 BSPB80N06S2L-06, 2N06L06 DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a

    SPB80N03S2-03

    Abstract: SPP80N03S2-03
    Text: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 30 V • Drain-source on-state resistance RDS on 3.4 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated


    Original     		PDF SPP80N03S2-03 SPB80N03S2-03 P-TO220-3-1 Q67040-S4247 P-TO263-3-2 Q67040-S4258 SPB80N03S2-03 SPP80N03S2-03

    2N0608

    Abstract: Q67040-S4284 AS3500 SPB80N06S2-08 SPP80N06S2-08 2N060
    Text: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 8 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated


    Original     		PDF SPP80N06S2-08 SPB80N06S2-08 P-TO220-3-1 Q67040-S4283 2N0608 P-TO263-3-2 Q67040-S4284 2N0608 Q67040-S4284 AS3500 SPB80N06S2-08 SPP80N06S2-08 2N060

    SPB80N04S2-04

    Abstract: SPP80N04S2-04
    Text: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 40 V • Drain-source on-state resistance RDS on 3.9 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated


    Original     		PDF SPP80N04S2-04 SPB80N04S2-04 P-TO220-3-1 Q67040-S4260 P-TO263-3-2 Q67040-S4257 SPB80N04S2-04 SPP80N04S2-04

    SPB80N04S2L-04

    Abstract: Q67040-S4261
    Text: Preliminary data SPP80N04S2L-04 SPB80N04S2L-04 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 40 V • Drain-source on-state resistance RDS on 3.6 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated


    Original     		PDF SPP80N04S2L-04 SPB80N04S2L-04 SPP80N04S2L-04 P-TO220-3-1 Q67040-S4261 SPB80N04S2L-04 P-TO263-3-2 Q67040-S4262 Q67040-S4261

    2n03l03

    Abstract: 2N03L SPB80N03S2L-03 ANPS071E SPI80N03S2L-03 SPP80N03S2L-03 INFINEON PART MARKING to263
    Text: SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 2.8 mΩ ID 80 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2


    Original     		PDF SPI80N03S2L-03 SPP80N03S2L-03 SPB80N03S2L-03 SPP80N03S2L-03 Q67040-S4248 Q67040-S4259 2N03L03 Q67042-S4078 2n03l03 2N03L SPB80N03S2L-03 ANPS071E SPI80N03S2L-03 INFINEON PART MARKING to263

    2N06L11

    Abstract: ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L
    Text: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 11 mΩ ID 80 A • Logic Level • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code


    Original     		PDF SPP80N06S2L-11 SPB80N06S2L-11 Q67060-S6035 2N06L11 Q67060-S6036 BSPP80N06S2L-11 BSPB80N06S2L-11, 2N06L11 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L

    2N06L05

    Abstract: INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS
    Text: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.5 mΩ • Logic Level ID 80 A •=175°C operating temperature P-TO263-3-2 • Enhancement mode P-TO220-3-1


    Original     		PDF SPP80N06S2L-05 SPB80N06S2L-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4246 2N06L05 P-TO263-3-2 2N06L05 INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS

    2n0605

    Abstract: BSPP80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 6020G 6840H
    Text: SPP80N06S2-05 SPB80N06S2-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.8 mΩ •=175°C operating temperature ID 80 A • Avalanche rated P-TO263-3-2 • Enhancement mode P-TO220-3-1


    Original     		PDF SPP80N06S2-05 SPB80N06S2-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4245 2N0605 P-TO263-3-2 2n0605 BSPP80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 6020G 6840H

    2N04L03

    Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03 28BE
    Text: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Logic Level ID 80 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated


    Original     		PDF SPP80N04S2L-03 SPB80N04S2L-03 Q67040-S4261 2N04L03 Q67040-S4262 BSPP80N04S2L-03 BSPB80N04S2L-03, 2N04L03 ANPS071E SPB80N04S2L-03 SPP80N04S2L-03 28BE

    Untitled

    Abstract: No abstract text available
    Text: SPP80P06P SPB80P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current


    Original     		PDF SPP80P06P SPB80P06P O263-3) P-TO220-3 PG-TO263-3

    BUZ111SL

    Abstract: Q67040-S4003-A2 SPP80N05
    Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 BUZ111SL Q67040-S4003-A2 SPP80N05

    SPP80N05

    Abstract: Q67040-S4005-A2
    Text: BUZ 110 S SPP80N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 110 S 55 V


    Original     		PDF SPP80N05 O-220 Q67040-S4005-A2 28/Jan/1998 SPP80N05 Q67040-S4005-A2

    transistor buz 350

    Abstract: Q67040-S4004-A2
    Text: BUZ 110 SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF SPP80N05L O-220 Q67040-S4004-A2 28/Jan/1998 transistor buz 350 Q67040-S4004-A2

    2N06LH5

    Abstract: No abstract text available
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2L-H5 SPB80N06S2L-H5 P-TO220-3-1 P-TO263-3-2 P-TO220-3-1 Q67060-S6054 Q67060-S6055 2N06LH5

    2n0609

    Abstract: Q67060-S6025 Q67060-S6027 SPP80N06S2-09 3140PF 2N060 INFINEON PART MARKING to263
    Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 R DS on 9.1 m ID 80 A P- TO263 -3-2  Avalanche rated V P- TO220 -3-1  dv/dt rated Type SPP80N06S2-09 Package


    Original     		PDF SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 Q67060-S6027 2N0609 BSPP80N06S2-09 BSPB80N06S2-09, Q67060-S6027 3140PF 2N060 INFINEON PART MARKING to263

    Q67042-S4016

    Abstract: No abstract text available
    Text: SPP80P06P SPB80P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS · Enhancement mode Drain-source on-state resistance RDS on · Avalanche rated Continuous drain current ID · dv/dt rated · 175°C operating temperature


    Original     		PDF SPP80P06P SPB80P06P SPB80P06P P-TO220-3-1 Q67042-S4017 P-TO263-3-2 Q67042-S4016 Q67042-S4016

    spp80p06p

    Abstract: No abstract text available
    Text: SPP80P06P H SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current • dv/dt rated


    Original     		PDF SPP80P06P IEC61249-2-21 PG-TO220-3 25ntain

    Untitled

    Abstract: No abstract text available
    Text: Infineon SPP80P06P SPB80P06P Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance ñ DS on • Avalanche rated Continuous drain current


    OCR Scan     		PDF SPP80P06P SPB80P06P P-T0220-3-1 Q67042-S4017 P-T0263-3-2 Q67042-S4016