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    SPP07N60C3 Search Results

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    SPP07N60C3 Price and Stock

    Infineon Technologies AG SPP07N60C3XKSA1

    MOSFET N-CH 650V 7.3A TO220-3
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    DigiKey SPP07N60C3XKSA1 Tube 577 1
    • 1 $3.27
    • 10 $3.27
    • 100 $3.27
    • 1000 $1.11736
    • 10000 $1.07438
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    Mouser Electronics SPP07N60C3XKSA1 896
    • 1 $2.7
    • 10 $1.35
    • 100 $1.27
    • 1000 $1.07
    • 10000 $1.05
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    Newark SPP07N60C3XKSA1 Bulk 1,636 1
    • 1 $2.82
    • 10 $2.11
    • 100 $1.39
    • 1000 $1.11
    • 10000 $1.11
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    Rochester Electronics SPP07N60C3XKSA1 36 1
    • 1 $1.19
    • 10 $1.19
    • 100 $1.12
    • 1000 $1.01
    • 10000 $1.01
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    EBV Elektronik SPP07N60C3XKSA1 16 Weeks 500
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    Infineon Technologies AG SPP07N60C3HKSA1

    MOSFET N-CH 650V 7.3A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP07N60C3HKSA1 Tube 500
    • 1 -
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    • 1000 $1.00778
    • 10000 $1.00778
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    Infineon Technologies AG SPP07N60C3XK

    Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP07N60C3XKSA1)
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    Avnet Americas SPP07N60C3XK Tube 15 Weeks 1,000
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    • 1000 $0.61516
    • 10000 $0.60033
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    Infineon Technologies AG SPP07N60C3

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    Bristol Electronics SPP07N60C3 49
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    Quest Components SPP07N60C3 39
    • 1 $2.24
    • 10 $1.792
    • 100 $1.344
    • 1000 $1.344
    • 10000 $1.344
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    TME SPP07N60C3 1
    • 1 $1.48
    • 10 $1.18
    • 100 $1.09
    • 1000 $1.09
    • 10000 $1.09
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    ComSIT USA SPP07N60C3 264
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    Win Source Electronics SPP07N60C3 7,960
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    • 100 $1.4634
    • 1000 $1.189
    • 10000 $1.189
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    Others SPP07N60C3

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    Chip 1 Exchange SPP07N60C3 20
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    Find more SPP07N60C3 price and stock on Findchips.com

    SPP07N60C3 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP07N60C3 Infineon Technologies Cool MOS Power Amp., 650V 7.3A 83W, MOS-FET N-Channel enhanced Original PDF
    SPP07N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP07N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.60 ?, 7.3A Original PDF
    SPP07N60C3HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V TO-220AB Original PDF
    SPP07N60C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A TO-220AB Original PDF

    SPP07N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07N60

    Abstract: 07N60C3
    Text: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60 07N60C3

    07N60C3

    Abstract: No abstract text available
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3

    smd diode marking G12

    Abstract: SPA07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 smd diode marking G12

    07N60C3

    Abstract: 07n60c
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 07n60c

    07N60C3

    Abstract: No abstract text available
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07N60C3

    07n60c3

    Abstract: 07N60C3 SMD
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07n60c3 07N60C3 SMD

    07N60C3

    Abstract: 07n60c 07n60
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 P-TO220-3-1 07N60C3 07n60c 07n60

    07N60C3

    Abstract: SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3
    Text: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3

    07n60c3

    Abstract: 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07n60c3 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12

    07N60C3

    Abstract: 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07N60C3 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3

    07n60c3

    Abstract: No abstract text available
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07n60c3

    07N60C3

    Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60C3 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    07N60C3 equivalent

    Abstract: 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3 equivalent 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω •=Periodic avalanche rated ID


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3

    07N60C3

    Abstract: PG-TO220-3-31
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: 07N60C3

    Untitled

    Abstract: No abstract text available
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31

    07n60c3

    Abstract: transistor 07n60c3 SPP07N60C3 SPA07N60C3 Q67040-S4400 07N60C3 equivalent SPI07N60C3 PG-TO220-3 SMD marking code 55A TRANSISTOR SMD MARKING CODE G12
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07n60c3 transistor 07n60c3 SPP07N60C3 SPA07N60C3 Q67040-S4400 07N60C3 equivalent SPI07N60C3 PG-TO220-3 SMD marking code 55A TRANSISTOR SMD MARKING CODE G12

    07n60c3

    Abstract: 07N60C3 equivalent s4409 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07n60c3 07N60C3 equivalent s4409 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    07N60C3

    Abstract: AN-TO220-3-31-01
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 AN-TO220-3-31-01

    07n60c3

    Abstract: 07N60C3 equivalent to220 pcb footprint SPA07N60C3 07N60 SPI07N60C3 PG-TO220 PG-TO220-3 smd transistor marking br SPP07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 07n60c3 07N60C3 equivalent to220 pcb footprint SPA07N60C3 07N60 SPI07N60C3 PG-TO220 PG-TO220-3 smd transistor marking br SPP07N60C3

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    CTX22-16134

    Abstract: No abstract text available
    Text: NCP1230GEVB NCP1230 90 Watt, Universal Input Adapter Power Supply Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL General Description Design Specification The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications


    Original     		PDF NCP1230GEVB NCP1230 EVBUM2131/D CTX22-16134

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    smd marking g12

    Abstract: No abstract text available
    Text: SPB07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPB07N60C3 P-TO263-3-2 07N60C3 SPB07N60C3 Q67040-S4394 smd marking g12