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    SPN8822 Search Results

    SPN8822 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPN8822 SYNC Power Common-Drain Dual N-Channel Enhancement Mode MOSFET Original PDF
    SPN8822A SYNC Power Common-Drain Dual N-Channel Enhancement Mode MOSFET Original PDF
    SPN8822ATS8RG SYNC Power Common-Drain Dual N-Channel Enhancement Mode MOSFET Original PDF
    SPN8822ATS8TG SYNC Power Common-Drain Dual N-Channel Enhancement Mode MOSFET Original PDF
    SPN8822TS8RG SYNC Power Common-Drain Dual N-Channel Enhancement Mode MOSFET Original PDF
    SPN8822TS8TG SYNC Power Common-Drain Dual N-Channel Enhancement Mode MOSFET Original PDF

    SPN8822 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPN8822A

    Abstract: SPN8822ATS8RG SPN8822ATS8TG marking 30 dual mosfet marking Td MOSFET
    Text: SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822A is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially


    Original     		PDF SPN8822A SPN8822A SPN8822ATS8RG SPN8822ATS8TG marking 30 dual mosfet marking Td MOSFET

    6 PIN TRANSISTORS 58A

    Abstract: SPN8822A N-Channel Enhancement Mode MOSFET SPN8822ATS8RG SPN8822ATS8TG
    Text: SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822A is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially


    Original     		PDF SPN8822A SPN8822A 6 PIN TRANSISTORS 58A N-Channel Enhancement Mode MOSFET SPN8822ATS8RG SPN8822ATS8TG

    12V 30A 3 pin mosfet

    Abstract: SPN8822TS8RG SPN8822 SPN8822TS8TG tf 600 mosfet gate source voltage 20v
    Text: SPN8822 Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially


    Original     		PDF SPN8822 SPN8822 12V 30A 3 pin mosfet SPN8822TS8RG SPN8822TS8TG tf 600 mosfet gate source voltage 20v

    SPN8822

    Abstract: SPN8822TS8RG SPN8822TS8TG SPN8
    Text: SPN8822 Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially


    Original     		PDF SPN8822 SPN8822 SPN8822TS8RG SPN8822TS8TG SPN8