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Text: SST39SF010A / SST39SF020A / SST39SF040 45 ns EOL Suplemental Information EOL Data Sheet Description The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash MPF devices manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate
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CR10
Abstract: No abstract text available
Text: SuperFlash EEPROM Technology Technical Paper 1.0 INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The
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transistor c1c
Abstract: floating-gate injector CR10
Text: SuperFlash EEPROM Technology Technical Paper Revised March 1999 1.0 INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The
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Text: 16 Mbit x8 Multi-Purpose Flash Plus SST39VF1681 / SST39VF1682 A Microchip Technology Company Data Sheet The SST39VF1681 / SST39VF1682 are 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector
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P106H
Abstract: SST39VF1681 SST39VF1682
Text: 16 Mbit x8 Multi-Purpose Flash Plus SST39VF1681 / SST39VF1682 A Microchip Technology Company Data Sheet The SST39VF1681 / SST39VF1682 are 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector
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split-gate flash
Abstract: NAND read disturb markov sl 100 sem vlsi tech
Text: Charge-Gain Program Disturb Mechanism in Split-Gate Flash Memory Cell V. Markov, K. Korablev, A. Kotov, X. Liu, Y.B. Jia, T.N. Dang, and A. Levi Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 408-523-8506; fax: 408-736-4409; e-mail: vmarkov@sst.com
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Abstract: footprint WSON footprint WSON-8 WSON8 WSON SST25VF016 SST25VF080 spi In Circuit Serial Programming SST25 SST25VF010
Text: Product Brief August 2002 SST25 Series SPI Serial Flash Make Obsolescence Obsolete! The Breakthrough Flash with a Clear Migration Path. Take your flash designs to the next level with the new SST SPI Serial Flash. With our split-gate cell design, thick oxide tunneling, and patented,
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spi In Circuit Serial Programming
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Abstract: No abstract text available
Text: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B A Microchip Technology Company Preliminary Specification The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced MultiPurpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design
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Abstract: BAX15 B1273 6401B
Text: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B A Microchip Technology Company Preliminary Specification The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced MultiPurpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design
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hot electron devices
Abstract: igfet sonos SST superflash Dual-Gate Mosfet electric field permittivity DSASW0037374 superflash sst
Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for Optimization of Programming Efficiency and Uniformity of Split Gate Source-Side Injection Superflash Memory Huinan Guan, Member, IEEE, Dana Lee, Member, IEEE, and G. P. Li
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Text: OPTICAL JACK KYCON RoHS KFO42X Series Ordering Information 35XX KFO42X Series G2 T Type Audio Jack XX- Color Option Split Gate Series KFO42X - Stacked Optical Audio Jack Audio Jack 3S - 3.5 Audio Jack KFO42X Series Stacked Optical Jack Audio Jack over Optical
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Text: 32 Mbit x16 Multi-Purpose Flash Plus SST39VF3201C / SST39VF3202C Data Sheet The SST39VF3201C and SST39VF3202C devices are 2M x16, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate
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Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Data Sheet The SST39WF1601 / SST39WF1602 are a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) devices manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate
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Text: 4 Mbit x16 Multi-Purpose Flash Plus SST39VF401C / SST39VF402C / SST39LF401C / SST39LF402C Data Sheet SST39VF401C / SST39VF402C / SST39LF401C / SST39LF402C are 256K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thickoxide tunneling injector attain better reliability and manufacturability compared
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Text: 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash (MPF) devices manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate
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Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39VF1601C / SST39VF1602C A Microchip Technology Company Data Sheet The SST39VF1601C / SST39VF1602C devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate
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Abstract: sst39vf1601c FE000h-FFFFF ac 1602C
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39VF1601C / SST39VF1602C A Microchip Technology Company Data Sheet The SST39VF1601C / SST39VF1602C devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate
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Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 A Microchip Technology Company Data Sheet The SST39WF1601 / SST39WF1602 are a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) devices manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate
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Text: 64 Mbit x16 Advanced Multi-Purpose Flash Plus A Microchip Technology Company SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 Data Sheet The SST38VF6401/6402/6403/6404 are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, highperformance CMOS Super- Flash technology. The split-gate cell design and thickoxide tunneling injector attain better reliability and manufacturability compared
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Abstract: SST39WF1602 BF274
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 A Microchip Technology Company Data Sheet The SST39WF1601 / SST39WF1602 are a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) devices manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate
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Abstract: SST38VF6404 B1277 S7130 BAX17 b1275 S968 S56S sst38vf6402-90-5c-eke
Text: 64 Mbit x16 Advanced Multi-Purpose Flash Plus A Microchip Technology Company SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 Data Sheet The SST38VF6401/6402/6403/6404 are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, highperformance CMOS Super- Flash technology. The split-gate cell design and thickoxide tunneling injector attain better reliability and manufacturability compared
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Abstract: D701 EEPROM cross NAND read disturb SST superflash picture of d701 TRansistor 701
Text: SuperFlash EEPROM Technology Technical Paper November 2001 SuperFlash EEPROM Technology INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The SuperFlash technology and memory cell have a number of important
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Abstract: No abstract text available
Text: SST39LF010/020/040 and SST39VF010/020/040 45 ns and B3KE EOL Supplemental Information EOL Data Sheet Description The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash MPF manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The
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ua701
Abstract: 702 TRANSISTOR f050 transistor
Text: Technical Comparison of Floating Gate Reprogrammable Nonvolatile Memories Technical Paper 1.0 INTRODUCTION Floating gate reprogrammable EEPROMs, whether called flash memories, EPROMs, or byte alterable E2PROMs, can be compared on performance, cost, reliability, and technology. Performance, cost, and reliability are directly related to the design and wafer process technology. This paper will compare the three major
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