C35M
Abstract: iv-s20 IV-S30J IVS30SP
Text: R SParameter Version 3.0 Produced in Sep. 2002 setting support software for the IV series Model name IV-S30SP Instruction Manual <Applied models> - IV-S30 - IV-S31M/S32M/S33M IV-S31MX/S32MX/S33MX - IV-S30J - IV-C35M - IV-S20 Thank you for purchasing the IV-S30SP, which is parameter setting support software for the IV series.
|
Original
|
PDF
|
IV-S30SP
IV-S30
IV-S31M/S32M/S33M
IV-S31MX/S32MX/S33MX
IV-S30J
IV-C35M
IV-S20
IV-S30SP,
IV-S31MX/S32MX/S33MX,
IV-S20)
C35M
iv-s20
IV-S30J
IVS30SP
|
models
Abstract: Rogers 4350B 85052B 4350B 00456 sma connector footprint EF2A51A063E10B hp network analyzer connectors SMA End Launch connectors SMA footprint
Text: Information on S parameter Files for various component families Purpose: The purpose of this document is to provide related technical information regarding the acquisition of Sparameter data files obtained for various TFT component families. This document also covers a
|
Original
|
PDF
|
40GHz
4350B
EF2A51A063E10B
models
Rogers 4350B
85052B
4350B
00456
sma connector footprint
EF2A51A063E10B
hp network analyzer connectors
SMA End Launch connectors
SMA footprint
|
"15 GHz" power amplifier 41dBm
Abstract: RO4003 TGA4530 41dBm
Text: Advanced Product Information September 14, 2006 17-21 GHz High Output TOI Packaged Amplifier TGA4530-SM Key Features • • • • • • • • Primary Applications Measured Fixtured Data Sparameters dB Bias Conditions: Vd = 6V, Id = 825mA 25 20 15
|
Original
|
PDF
|
TGA4530-SM
825mA
TGA4530
21GHz
"15 GHz" power amplifier 41dBm
RO4003
41dBm
|
lifetime Solder paste stencil
Abstract: No abstract text available
Text: K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • Primary Applications Measured Performance Sparameters dB Vd = 7V, Id = 760mA 25 20 15 10 5 -5 -10 -15 -20 P1dB & OTOI (dBm) • • • Gain IRL ORL Point-to-Point Radio
|
Original
|
PDF
|
TGA4525-SM
17GHz
27GHz
760mA
830mA
TGA4525-SM
lifetime Solder paste stencil
|
Untitled
Abstract: No abstract text available
Text: Advance Product Information June 9, 2006 K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • • Primary Applications Measured Performance Vd = 7V, Id = 760mA • • • 25 Sparameters dB 20 Gain IRL ORL 15 10
|
Original
|
PDF
|
TGA4525-SM
17GHz
27GHz
760mA
850mA
TGA4525-SM
|
Untitled
Abstract: No abstract text available
Text: TGA4530 K Band High Linearity Power Amplifier Key Features • • • • • • • • Primary Applications Measured Fixtured Data Sparameters dB Bias Conditions: Vd = 7 V, Id = 825 mA 25 20 Gain 15 IRL 10 ORL 5 -5 -10 -15 -20 -25 -30 -35 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
|
Original
|
PDF
|
TGA4530
20dBm/Tone
|
Untitled
Abstract: No abstract text available
Text: 17-21 GHz High Output TOI Packaged Amplifier TGA4530-SM Key Features • • • • • • • • Primary Applications Measured Fixtured Data Sparameters dB Bias Conditions: Vd = 6V, Id = 825mA 25 20 15 10 5 -5 -10 -15 -20 -25 Gain IRL ORL • Point-to-Point Radio
|
Original
|
PDF
|
TGA4530-SM
825mA
TGA4530
21GHz
41dBm
|
Untitled
Abstract: No abstract text available
Text: Advanced Product Information September 5, 2006 17-21 GHz High Output TOI Packaged Amplifier TGA4530-SM Key Features • • • • • • • • Primary Applications Measured Fixtured Data Sparameters dB Bias Conditions: Vd = 6V, Id = 825mA 25 20 15 10
|
Original
|
PDF
|
TGA4530-SM
41dBm
825mA
TGA4530
21GHz
TGA4530-SM
|
TGA4530
Abstract: No abstract text available
Text: Product Data Sheet March 5, 2007 K Band High Linearity Power Amplifier TGA4530 Key Features • • • • • • • • Measured Fixtured Data Sparameters dB Bias Conditions: Vd = 7V, Id = 825mA 25 20 Gain 15 IRL 10 ORL 5 -5 -10 -15 -20 -25 -30 -35 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
|
Original
|
PDF
|
TGA4530
825mA
20dBm/Tone
42dBm
TGA4530
|
TGA4530
Abstract: No abstract text available
Text: TGA4530 K Band High Linearity Power Amplifier Key Features • • • • • • • • Primary Applications Measured Fixtured Data Sparameters dB Bias Conditions: Vd = 7 V, Id = 825 mA 25 20 Gain 15 IRL 10 ORL 5 -5 -10 -15 -20 -25 -30 -35 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
|
Original
|
PDF
|
TGA4530
20dBm/Tone
TGA4530
|
TGA4525-SM
Abstract: No abstract text available
Text: Advance Product Information July 18, 2006 K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • Primary Applications Measured Performance Sparameters dB Vd = 7V, Id = 760mA 25 20 15 10 5 -5 -10 -15 -20 P1dB & OTOI (dBm)
|
Original
|
PDF
|
TGA4525-SM
760mA
TGA4525-SM
17GHz
27GHz
|
Untitled
Abstract: No abstract text available
Text: Product Data Sheet September 5, 2006 K Band High Linearity Power Amplifier TGA4530 Key Features • • • • • • • • Measured Fixtured Data Sparameters dB Bias Conditions: Vd = 7V, Id = 825mA 25 20 Gain 15 IRL 10 ORL 5 -5 -10 -15 -20 -25 -30 -35
|
Original
|
PDF
|
TGA4530
42dBm
825mA
20dBm/Tone
TGA4530
|
AN3009
Abstract: Agilent 9981
Text: Application Note AN3009 S-Parameter S2P File Format Rev. V2 Introduction Listed among many of M/A-COM’s products are files that describe the small signal scattering matrix, or sparameters, of the device. The S2P format is an industry standard and thus is recognized by many
|
Original
|
PDF
|
AN3009
AN3009
Agilent 9981
|
Untitled
Abstract: No abstract text available
Text: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description
|
OCR Scan
|
PDF
|
TGA8300
18-GHz
18-dBm
TGA8300
|
|
|
TGF1350
Abstract: No abstract text available
Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation
|
OCR Scan
|
PDF
|
TGF1350
TGF1350
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz
|
OCR Scan
|
PDF
|
TIM5964-8SL
TIM5964-8SL
MW50750196
|
si2127
Abstract: No abstract text available
Text: TIM5359-8L FEATURES : • L O W IN T E R M O D U L A T I O N D I S T O R T I O N I M 3 = —4 5 dBc at Po = 2 8 dBm . Single Carrier Level • H IG H • H IG H G A IN G ^ B = 8. 5 d B at 5. 3 G H z to 5. 9 G Hz - B R O A D B A N D IN T E R N A L L Y M A T C H E D
|
OCR Scan
|
PDF
|
TIM5359-8L
TIM5359--
si2127
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package
|
OCR Scan
|
PDF
|
TIM1414-4
MW50280196
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2497 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2497 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 1.2dB f=12GHz • High Gain Unit in mm 2.16 ± 0.2 1.1 1.1 : Ga = 10dB (f=12GHz)
|
OCR Scan
|
PDF
|
2SK2497
12GHz)
|
9701455-S-J1
Abstract: APH184C
Text: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps
|
OCR Scan
|
PDF
|
APH184C
APH184C
SA051
9701455-S-J1
9701455-S-J1
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA M ICRO W A VE POWER M ICRO W AVE SEM ICO NDUCTO R JS8850A-AS TECHNICAL DATA F E AT URES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTA TIO N CH IP FORM H IG H PO W ER p1dB = 2 1 5 d B m a t f = 15 G H z H IG H G AIN G^dB = 9 -0 dB at f = 15 GHz
|
OCR Scan
|
PDF
|
JS8850A-AS
15GHz
18GHz
18GHz
15GHz
|
ely transformers
Abstract: No abstract text available
Text: Monolithic-Microwave Integrated Circuits BACKGROUND T l's M icrow ave Military Components M M C organization was created to produce Gallium Arsenide (GaAs) Monolithic M icrowave Integrated Circuits (M M ICs), and to integrate the broad range of technologies available at Texas Instruments.
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r
|
OCR Scan
|
PDF
|
TIM7785-16SL
MW51130196
TIM7785-16SL
|
SA051
Abstract: HEMT Amplifier
Text: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA
|
OCR Scan
|
PDF
|
APH212C
APH212C
SA051
006/J-2
SA051
HEMT Amplifier
|