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    SOUTH SEA SEMICONDUCTOR Search Results

    SOUTH SEA SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    SCR410T-K03-PCB Murata Manufacturing Co Ltd 1-Axis Gyro Sensor on Evaluation Board Visit Murata Manufacturing Co Ltd

    SOUTH SEA SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC PDF

    semiconductor cross reference

    Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference PDF

    SSS2209

    Abstract: sot-23 P-Channel MOSFET
    Text: SSS2209 P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 170 @VGS = -4.5V -2.0A -20V G 240 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		SSS2209 OT-23 OT-23 SSS2209 sot-23 P-Channel MOSFET PDF

    BSS138

    Abstract: No abstract text available
    Text: BSS138 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 50V 0.22A SOT-23 RDS(ON) (Ω) Max D 3.5 @VGS = 10V G 6.0 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		BSS138 OT-23 OT-23 BSS138 PDF

    tjm sot23

    Abstract: No abstract text available
    Text: SSS2304 N-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 55 @VGS = 4.5V G 80 @VGS = 2.5V 3.2A 20V S 120 @VGS = 1.8V D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		SSS2304 OT-23 OT-23 tjm sot23 PDF

    sss2309

    Abstract: No abstract text available
    Text: SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		SSS2309 OT-23 OT-23 sss2309 PDF

    SSM4431

    Abstract: No abstract text available
    Text: SSM4431 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 6.0A - 30V 1 70 @VGS = - 5V 2 3 4 D (5, 6, 7, 8) 80 @VGS = - 4.5V FEATURES Super high dense cell design for low R DS(ON). G (4) Rugged and reliable.


    Original     		SSM4431 SSM4431 PDF

    SSM4435A

    Abstract: No abstract text available
    Text: SSM4435A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 RDS(ON) (mΩ) Max 8 25 @VGS = - 10V - 8.0A - 30V 7 45 @VGS = - 5V 6 5 1 2 3 4 D (5, 6, 7, 8) 60 @VGS = - 4.5V FEATURES Super high dense cell design for low R DS(ON). G (4) Rugged and reliable.


    Original     		SSM4435A SSM4435A PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM4931 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 5.5A - 30V 1 70 @VGS = - 5V 2 80 @VGS = - 4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high dense cell design for low R DS(ON). G1 (2)


    Original     		SSM4931 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 20A TO-252 RDS(ON) (mΩ) Max D 30 @VGS = 10V G 55 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		SSD2030N O-252 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary SO-8 8 VDS V 7 RDS(ON) (mΩ) Max ID (A) 6 5 30 @VGS = 4.0V 6A 20V 1 40 @VGS = 2.5V 2 3 4 D2 (5, 6) D1 (7, 8) FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable.


    Original     		SSM9926 PDF

    SSD3055LA

    Abstract: No abstract text available
    Text: SSD3055LA N-Channel Enhancement Mode MOSFET Product Summary VDS V TO-252 RDS(ON) (mΩ) Max ID (A) D 65 @VGS = 10V 15A 25V G 85 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		SSD3055LA O-252 O-252 SSD3055LA PDF

    TLO 81

    Abstract: P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT SSM8405
    Text: SSM8405 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) 8 RDS(ON) (mΩ) Max SO-8 7 6 5 25 @VGS = 10V 30V 7A 35 @VGS = 5V 1 2 40 @VGS = 4.5V 3 4 D1 (7,8) D2 (5,6) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max G1 (2)


    Original     		SSM8405 TLO 81 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT SSM8405 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM4415 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max 7 8 25 @VGS = - 20V - 8.0A - 30V SO-8 35 @VGS = - 10V 6 5 1 2 3 4 D (5, 6, 7, 8) FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. G (4)


    Original     		SSM4415 PDF

    SSN2N7002A

    Abstract: No abstract text available
    Text: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A


    Original     		SSN2N7002A OT-323 OT-323 SSN2N7002A PDF

    P-Channel mosfet 40V

    Abstract: SSM8445
    Text: SSM8445 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) 8 RDS(ON) (mΩ) Max SO-8 7 6 5 30 @VGS = 10V 40V 6.8A 45 @VGS = 5V 1 2 50 @VGS = 4.5V 3 4 D1 (7,8) D2 (5,6) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max G1 (2)


    Original     		SSM8445 P-Channel mosfet 40V SSM8445 PDF

    MOSFET "MARKING CODE 7V"

    Abstract: SOT-363 mosfet A495 5G12
    Text: SSN2N7002B Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-363 RDS(ON) ( ) Max 3 @VGS = 10V 1 4 @V GS = 5V D1 (6) D2 (3) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. G2(5) G1(2) SOT-363 package.


    Original     		SSN2N7002B OT-363 OT-363 MOSFET "MARKING CODE 7V" SOT-363 mosfet A495 5G12 PDF

    ssg8

    Abstract: SSG8206A 7A TSSOP-8
    Text: SSG8206A Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 16V 7A TSSOP-8 8 RDS(ON) (m ) Max 7 6 5 20 @VGS = 4.0V 1 35 @VGS = 2.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. TSSOP-8 package.


    Original     		SSG8206A ssg8 SSG8206A 7A TSSOP-8 PDF

    210t2

    Abstract: SSM8958
    Text: SSM8958 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) 30V 6A 8 RDS(ON) (mΩ) Max SO-8 7 6 5 30 @VGS = 10V 1 2 60 @VGS = 4.5V 3 4 D1 (7,8) D2 (5,6) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max G1 (2) G2 (4) 60 @VGS = - 10V


    Original     		SSM8958 210t2 SSM8958 PDF

    ssg8

    Abstract: MOSFET TSSOP-8 dual n-channel SSG8405
    Text: SSG8405 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 25 @VGS = 10V 30V 6.5A 35 @VGS = 5V 1 40 @VGS = 4.5V 2 3 6 5 4 D (1) D (8`) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max 45 @VGS = - 10V


    Original     		SSG8405 ssg8 MOSFET TSSOP-8 dual n-channel SSG8405 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM9923 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 30 @VGS = -4.5V -5.5A -20V 1 45 @VGS = -2.5V 2 3 4 90 @VGS = -1.8V D2 (5, 6) D1 (7, 8) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable.


    Original     		SSM9923 PDF

    SSS3462

    Abstract: tlo 72
    Text: SSS3462 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max D 60 @VGS = 10V 3.2A 60V SOT-23 G 85 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free. o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		SSS3462 OT-23 OT-23 SSS3462 tlo 72 PDF

    SSG4935A

    Abstract: No abstract text available
    Text: SSG4935A Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 27 @VGS = - 10V - 6.5A - 30V 42 @VGS = - 5V 1 50 @VGS = - 4.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON). G (4)


    Original     		SSG4935A SSG4935A PDF

    tic 2250

    Abstract: No abstract text available
    Text: SSS2316 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (mΩ) Max D 20 @VGS = 4.5V G 30 @VGS = 2.5V 5A 20V S 45 @VGS = 1.8V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S


    Original     		SSS2316 OT-23 OT-23 Operati50% tic 2250 PDF