TS16949
Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN25100DZ
100mV
ZXTP25100CZ
D-81541
TS16949
ZXTN25100DZ
ZXTN25100DZTA
ZXTP25100CZ
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Zetex ZXTP19100CZ
Abstract: No abstract text available
Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN19100CZ
ZXTP19100CZ
D-81541
Zetex ZXTP19100CZ
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ZXTN19100CZ
Abstract: TS16949 ZXTN19100CZTA ZXTP19100CZ
Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN19100CZ
ZXTP19100CZ
D-81541
ZXTN19100CZ
TS16949
ZXTN19100CZTA
ZXTP19100CZ
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PNP TRANSISTOR SOT89
Abstract: sc 107 transistor SC-62 C1 SOT89 PBSS4250X PBSS5540Z PXTA14 audio power amplifiers with transistors PBSS9110Z PBSS5320X
Text: Semiconductors Date of release: September 2004 Philips’ medium power transistor portfolio in SOT89 SC-62 and SOT223 (SC-73) General features Portfolio overview • Available in the biggest small-signal packages SOT89 (SC-62) and SOT223 (SC-73) • Bridging the gap between DPAK power transistors
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SC-62)
OT223
SC-73)
PNP TRANSISTOR SOT89
sc 107 transistor
SC-62
C1 SOT89
PBSS4250X
PBSS5540Z
PXTA14
audio power amplifiers with transistors
PBSS9110Z
PBSS5320X
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BSS225
Abstract: No abstract text available
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Ordering Code Tape and Reel Information Marking BSS225 SOT89
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BSS225
Q67042-S4266
E6327:
3000PCS/reel
BSS225
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PBSS302NX
Abstract: PBSS301NX PBSS303NX PBSS4250X PBSS4320X PBSS4330X PBSS4350X PBSS4520X PBSS4540X mse267
Text: Ultra low VCEsat BISS transistors in SOT89 (SC-62) 5.3 A continuous collector current in small medium power package Looking to reduce power consumption and create smaller end products? Then look no further than NXP ultra low VCEsat (BISS) transistors in SOT89 (SC-62). Housed in a medium-power package, these
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SC-62)
transistorsinSOT89
3Acontinuousand10
ackagesizeSOT89
PBSS306PX
PBSS302NX
PBSS301NX
PBSS303NX
PBSS4250X
PBSS4320X
PBSS4330X
PBSS4350X
PBSS4520X
PBSS4540X
mse267
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BSS225
Abstract: L6327
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes
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BSS225
L6327:
3000PCS/reel
BSS225
L6327
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MARKING KD
Abstract: BSS225
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes
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BSS225
L6327:
3000PCS/reel
MARKING KD
BSS225
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e005g
Abstract: No abstract text available
Text: ECG005 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +18 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19.5 dB Gain at 1 GHz • 3.3 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles
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ECG005
OT-86,
ECG005
choke-109
1-800-WJ1-4401
e005g
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Untitled
Abstract: No abstract text available
Text: ECG050 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +19 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19 dB Gain at 1 GHz • 5.5 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles
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ECG050
OT-86,
ECG050
for99
1-800-WJ1-4401
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SOT89 MARKING CODE 944
Abstract: No abstract text available
Text: ECG050 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +19 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19 dB Gain at 1 GHz • 5.5 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles
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ECG050
OT-86,
ECG050
for10
1-800-WJ1-4401
SOT89 MARKING CODE 944
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BF469
Abstract: BF420.423 2N5415
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors PRODUCT DATA: PAGES 29-31 HIGH-VOLTAGE TRANSISTORS OVERVIEW NPN leaded TO-39 surface-mount TO-92 TO-126 TO-202 SOT23 SOT89 SOT223
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BF420/422
BF483/485/487
MPSA42/43
PN3439/3440
2N5550/5551
BSR19/A
PMBT5550/5551
O-126
BF469
BF471
BF420.423
2N5415
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;
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FCX1149A
Abstract: DSA003683
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;
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100ms
100us
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DSA003683
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PMX15
Abstract: No abstract text available
Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm
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FPD750SOT89E
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Pmx1500
FPD750SOT89ESR
FPD750SOT89EE
FPD750SOT89EPCK
FPD750SOT89EPCK-411
FPD750SOT89EPCK-412
FPD750SOT89ESQ
PMX15
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FMMT591A
Abstract: FCX491A FCX591A MARKING 93 SOT89 DSA003685
Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FCX591A ISSUE 3 - OCTOBER 1995 PART MARKING DETAIL COMPLEMENTARY TYPE - C P2 FCX491A B ABSOLUTE MAXIMUM RATINGS. C E PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO
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FCX491A
-100mA
-500mA
-20mA*
-100mA*
-50mA*
-500mA*
-50mA,
FMMT591A
FCX491A
FCX591A
MARKING 93 SOT89
DSA003685
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Untitled
Abstract: No abstract text available
Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pm x 3000Pm
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FPD3000SOT8
FPD3000SOT89CE
3000Pm
FPD3000SOT89CESQ
FPD3000SOT89PCK
85GHz
FPD3000SOT89CESR
DS111103
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FPD3000SOT89
Abstract: FPD3000SOT89E InGaAs hemt biasing
Text: FPD3000SOT89E FPD3000SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm
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FPD3000SOT8
FPD3000SOT89E
25mx1500m
FPD3000SOT89E:
FPD3000SOT89PCK
FPD3000SOT89ESQ
DS100630
FPD3000SOT89
InGaAs hemt biasing
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FPD3000SOT89
Abstract: No abstract text available
Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm
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FPD3000SOT8
30dBm
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FPD3000SOT89CE
25mx1500m
FPD3000SOT89CE:
FPD3000SOT89CECE
EB3000SOT89-BC
FPD3000SOT89
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PBHV9040T
Abstract: piezo actuator driver PBHV9040Z PBHV8115T PBHV8540T PBHV8540Z PBHV9115T PMBTA44 SC-73 PBHV8115X
Text: NXP BISS high voltage transistors in SOT23, SOT89 SC-62 and SOT223 (SC-73) Boost performance with BISS HV technology Helping you keep ahead of increasing demands on system performance, our latest series of BISS (Breakthrough In Small-Signal) high voltage transistors
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OT223
SC-73)
PMBTA44
PBHV8115X
PBHV8540T
PBHV8115Z
PBHV9115T
brb098
brb097
PBHV9040T
piezo actuator driver
PBHV9040Z
PBHV8115T
PBHV8540T
PBHV8540Z
PBHV9115T
PMBTA44
SC-73
PBHV8115X
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FPD750SOT89
Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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25dBm
39dBm
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25mx1500m
FPD750SOT89E:
FPD750SOT89CE-BC
FPD750SOT89CE-BE
FPD750SOT89CE-BG
BC 148 TRANSISTOR DATASHEET
SSG 23 TRANSISTOR
TRANSISTOR BC 135
FPD750SOT89E
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0603 footprint IPC
Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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30dBm
45dBm
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25mx1500m
FPD3000SOT89E:
FPD3000SOT89CE-BD
FPD3000SOT89CE-BE
FPD3000SOT89CE-BG
0603 footprint IPC
FPD3000
TRANSISTOR BC 157
FPD3000SOT89E
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Untitled
Abstract: No abstract text available
Text: MMIC AP201 Product Features • • • • • • • • • Application • • • • • Small size SMD Type Package NO matching circuit needed High efficiency Higher linearity SOT89 Type Package Higher productivity Lower manufacturing cost GaAs MMIC
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S21-Gain
S11-Input
S22-ing
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Transistor BC 1078
Abstract: FPD750SOT89 FPD750SOT89CE FPD750SOT89E S 8550 transistor BC 1078 transistor
Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm
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FPD750SOT89
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25mx1500m
FPD750SOT89CE:
FPD750SOT89PCK
FPD750SOT89ESQ
FPD750SOT89ESR
Transistor BC 1078
FPD750SOT89
FPD750SOT89E
S 8550 transistor
BC 1078 transistor
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