SOT89 2A Search Results

2DB1188P

Abstract: P23Q
Contextual Info: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V  Case: SOT89   IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A  Case material: Molded Plastic, "Green" Molding Compound.

FCX690BTA

Abstract: SOT89 MARKING CODE .3B
Contextual Info: A Product Line of Diodes Incorporated Green FCX690B 45V NPN HIGH GAIN POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 45V  Case: SOT89  IC = 2A high Continuous Collector Current  Case material: molded plastic. “Green” molding compound.

Contextual Info: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP

Zetex ZXTP19100CZ

Abstract: TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA
Contextual Info: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP

Contextual Info: A Product Line of Diodes Incorporated FCX491 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V   IC = 1A Continuous Collector Current   ICM = 2A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.

PNP 200V 2A SOT89

Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
Contextual Info: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

Contextual Info: A Product Line of Diodes Incorporated FCX493A 60V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V • • IC = 1A high Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.

FCX619

Contextual Info: A Product Line of Diodes Incorporated FCX619 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V  Case: SOT89  IC = 3A high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound

Contextual Info: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state

ZXTN19020DZ

Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Contextual Info: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor

Contextual Info: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP

Contextual Info: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V  Case: SOT89  IC = -5.5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.

MARKING KN2

Contextual Info: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 3A high Continuous Current  Case material: Molded Plastic. “Green” Molding Compound.  Low saturation voltage VCE(sat) < 300mV @ 1A 

ZXTN2007Z

Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Contextual Info: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

Contextual Info: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTN19060CZ

Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA
Contextual Info: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor

TS16949

Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
Contextual Info: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP

TS16949

Abstract: ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A
Contextual Info: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP

SOT89 transistor marking 851

Contextual Info: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.

ZX5T849Z

Abstract: ZX5T849ZTA MARKING 7A SOT89
Contextual Info: ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in

ZXTN19020DZTA

Abstract: TS16949 ZXTN19020DZ ZXTP19020DZ
Contextual Info: ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

ZXTP2013Z

Abstract: ZXTP2013ZTA
Contextual Info: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

TS16949

Abstract: ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN
Contextual Info: ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN

Contextual Info: ZXTN25020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 6A VCE(sat) < 48mV @ 1A RCE(sat) = 30m⍀ PD = 2.4W Complementary part number ZXTP25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V NPN