MARKING N93
Abstract: 4446 FCX493 FCX593 fcx493ta
Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.
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FCX493
FCX593
FCX493TA
FCX493TC
MAX00
MARKING N93
4446
FCX493
FCX593
fcx493ta
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rf sot89 50
Abstract: No abstract text available
Text: MMA500 DC to 6 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.
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MMA500
rf sot89 50
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Aeroflex Microelectronic Solutions
Abstract: rf sot89 50 MMA500
Text: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.
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MMA500
MMA500
A17021
Aeroflex Microelectronic Solutions
rf sot89 50
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mma500
Abstract: 05OUR
Text: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.
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MMA500
MMA500
A17021
05OUR
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Untitled
Abstract: No abstract text available
Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.
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FCX493
FCX593
FCX493TA
FCX493TC
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FCX619
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FCX619 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V Case: SOT89 IC = 3A high Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound
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FCX619
220mV
AEC-Q101
J-STD-020
FCX619
DS33067
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BCV48
Abstract: BCV49 FMMT38A CM800
Text: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV49 ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV48 PARTMARKING DETAILS – EG C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage
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BCV49
BCV48
100mA,
500mA,
20MHz
FMMT38A
BCV48
BCV49
CM800
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state
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ZXTP2008Z
ZX5T949Z
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Untitled
Abstract: No abstract text available
Text: MMA711 DC to 5.0 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA711 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 5.0 GHz Broadband Gain Block
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MMA71
A17019
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Untitled
Abstract: No abstract text available
Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP
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ZXTP19100CZ
-100V
-130mV
ZXTN19100CZ
ZXTP19100CZTA
D-81541
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ZXTN19020DZ
Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Text: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
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ZXTP19020DZ
-47mV
ZXTN19020DZ
D-81541
ZXTN19020DZ
ZXTP19020DZ
ZXTP19020DZTA
TS16949
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Untitled
Abstract: No abstract text available
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V Case: SOT89 IC = -5.5A High Continuous Current Case Material: Molded Plastic. “Green” Molding Compound.
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J-STD-020
-60mV
DS33419
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TS16949
Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN25100DZ
100mV
ZXTP25100CZ
D-81541
TS16949
ZXTN25100DZ
ZXTN25100DZTA
ZXTP25100CZ
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ZXTP2014Z
Abstract: ZXTP2014ZTA
Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2014Z
-140V
ZXTP2014ZTA
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SOT89 transistor marking 5A
Abstract: ZXTN2011Z ZXTN2011ZTA
Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2011Z
ZXTN2011ZTA
SOT89 transistor marking 5A
ZXTN2011Z
ZXTN2011ZTA
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Untitled
Abstract: No abstract text available
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
FCX555
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Untitled
Abstract: No abstract text available
Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2011Z
ZXTN2011ZTA
ZXTN20miconductors
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Zetex ZXTP19100CZ
Abstract: No abstract text available
Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN19100CZ
ZXTP19100CZ
D-81541
Zetex ZXTP19100CZ
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Bv 42 transistor
Abstract: No abstract text available
Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2014Z
-140V
ZXTP2014ZTA
Bv 42 transistor
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Zetex ZXTP19100CZ
Abstract: TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA
Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP
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ZXTP19100CZ
-100V
-130mV
ZXTN19100CZ
ZXTP19100CZTA
D-81541
Zetex ZXTP19100CZ
TS16949
ZXTN19100CZ
ZXTP19100CZ
ZXTP19100CZTA
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ZXTN19060CZ
Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA
Text: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
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ZXTP19060CZ
-80mV
ZXTN19060CZ
ZXTP19060CZTA
D-81541
ZXTN19060CZ
TS16949
ZXTP19060CZ
ZXTP19060CZTA
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TS16949
Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
Text: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP
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ZXTP25012EZ
-70mV
ZXTN25012EZ
D-81541
TS16949
ZXTN25012EZ
ZXTP25012EZ
ZXTP25012EZTA
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TS16949
Abstract: ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
TS16949
ZXTN25020DZ
ZXTP25020DZ
ZXTP25020DZTA
SOT89 transistor marking 5A
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