TK10485M
Abstract: TK16203U TK14521 TK16202U MFP-12 tk14521m TK10489M TK10485 TK10492 MFP36
Text: 27 INTEGRATED CIRCUITS TOKO U. Kl M ï f i ICs for Communications Equipment üimfflic Surface Mounting Taping 9 .5 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • • FM IF system IC for use In cordless phones, amateur radios up to
|
OCR Scan
|
TK16201U
1000MHz
270MHz
TK10668Q
TK10485M
TK16203U
TK14521
TK16202U
MFP-12
tk14521m
TK10489M
TK10485
TK10492
MFP36
|
PDF
|
Aeroflex Microelectronic Solutions
Abstract: rf sot89 50 MMA500
Text: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.
|
Original
|
MMA500
MMA500
A17021
Aeroflex Microelectronic Solutions
rf sot89 50
|
PDF
|
mma500
Abstract: 05OUR
Text: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.
|
Original
|
MMA500
MMA500
A17021
05OUR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PART OBSOLETE - USE FZTA42 SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST15 ✪ ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE – BST40 PARTMARKING DETAIL – BT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER
|
Original
|
FZTA42
BST40
BST15
-175V
-150V
-50mA,
-30mA,
-10mA,
30MHz
|
PDF
|
BCV48
Abstract: BCV49 FMMT38A CM800
Text: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV49 ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV48 PARTMARKING DETAILS – EG C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage
|
Original
|
BCV49
BCV48
100mA,
500mA,
20MHz
FMMT38A
BCV48
BCV49
CM800
|
PDF
|
PNP TRANSISTOR SOT89
Abstract: BST15 BST40 FMMTA92 DSA003681 fmmt-a
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST15 ✪ ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE – BST40 PARTMARKING DETAIL – BT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
|
Original
|
BST15
BST40
-175V
-150V
-50mA,
-30mA,
-10mA,
30MHz
FMMTA92
PNP TRANSISTOR SOT89
BST15
BST40
DSA003681
fmmt-a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state
|
Original
|
ZXTP2008Z
ZX5T949Z
|
PDF
|
ZXTN19020DZ
Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Text: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
|
Original
|
ZXTP19020DZ
-47mV
ZXTN19020DZ
D-81541
ZXTN19020DZ
ZXTP19020DZ
ZXTP19020DZTA
TS16949
|
PDF
|
MMA704
Abstract: rf sot89
Text: MMA704 DC to 3.7 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA704 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 3.7 GHz Broadband Gain Block
|
Original
|
MMA704
MMA704
rf sot89
|
PDF
|
TS16949
Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
|
Original
|
ZXTN25100DZ
100mV
ZXTP25100CZ
D-81541
TS16949
ZXTN25100DZ
ZXTN25100DZTA
ZXTP25100CZ
|
PDF
|
ZXTN2007Z
Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
ZXTN2007Z
ZXTN2007ZTA
TAP26100
ZXTN2007Z
ZXTN2007ZTA
ZXTN
MARKING 7A SOT89
|
PDF
|
TS16949
Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
Text: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP
|
Original
|
ZXTP25012EZ
-70mV
ZXTN25012EZ
D-81541
TS16949
ZXTN25012EZ
ZXTP25012EZ
ZXTP25012EZTA
|
PDF
|
SOT89 transistor marking 851
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V Case: SOT89 IC = 5A High Continuous Current Case Material: Molded Plastic. “Green” Molding Compound.
|
Original
|
ZXTN2010Z
J-STD-020
ZXTP2012Z
MIL-STD-202,
DS33661
SOT89 transistor marking 851
|
PDF
|
ZX5T849Z
Abstract: ZX5T849ZTA MARKING 7A SOT89
Text: ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
ZX5T849Z
ZX5T849ZTA
ZX5T849Z
ZX5T849ZTA
MARKING 7A SOT89
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use FZTA92 SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST15 ✪ ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE – BST40 PARTMARKING DETAIL – BT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS.
|
Original
|
FZTA92
BST40
BST15
-175V
-150V
-50mA,
-30mA,
-10mA,
30MHz
|
PDF
|
53Z Zetex
Abstract: 1a SOT89 IC35
Text: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
|
Original
|
ZXTP2009Z
-60mV
ZXTP2009ZTA
522-ZXTP2009ZTA
ZXTP2009ZTA
53Z Zetex
1a SOT89
IC35
|
PDF
|
transistor marking 6A
Abstract: ZXTN2010Z ZXTN2010ZTA
Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various
|
Original
|
ZXTN2010Z
transistor marking 6A
ZXTN2010Z
ZXTN2010ZTA
|
PDF
|
ZXTN2007Z
Abstract: ZXTN2007ZTA sot89 bv
Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
ZXTN2007Z
ZXTN2007ZTA
ZXTN2007Z
ZXTN2007ZTA
sot89 bv
|
PDF
|
npn 120v 10a transistor
Abstract: ZX5T851Z ZX5T851ZTA
Text: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC
|
Original
|
ZX5T851Z
npn 120v 10a transistor
ZX5T851Z
ZX5T851ZTA
|
PDF
|
SOT89 52 10A
Abstract: design ideas FCX1051A FCX1051ATA FCX1151A TS16949
Text: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89
|
Original
|
FCX1051A
120mV
FCX1151A
FCX1051ATA
D-81541
SOT89 52 10A
design ideas
FCX1051A
FCX1051ATA
FCX1151A
TS16949
|
PDF
|
ZXTP2008Z
Abstract: ZXTP2008ZTA
Text: ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and
|
Original
|
ZXTP2008Z
ZXTP2008Z
ZXTP2008ZTA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89
|
Original
|
FCX1051A
120mV
FCX1151A
FCX1051ATA
D-81541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
|
Original
|
ZX5T949Z
REE611
|
PDF
|
ZXTN25012EZ
Abstract: TS16949 ZXTN25012EZTA ZXTP25012EZ
Text: ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation
|
Original
|
ZXTN25012EZ
ZXTP25012EZ
D-81541
ZXTN25012EZ
TS16949
ZXTN25012EZTA
ZXTP25012EZ
|
PDF
|