SOT89 11 Search Results

TK10485M

Abstract: TK16203U TK14521 TK16202U MFP-12 tk14521m TK10489M TK10485 TK10492 MFP36
Contextual Info: 27 INTEGRATED CIRCUITS TOKO U. Kl M ï f i ICs for Communications Equipment üimfflic Surface Mounting Taping 9 .5 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • • FM IF system IC for use In cordless phones, amateur radios up to

MARKING N93

Abstract: 4446 FCX493 FCX593 fcx493ta
Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.

Contextual Info: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW78D  BAW79D !  ! Type Package Configuration Marking BAW78D BAW79D SOT89 SOT89 single

Aeroflex Microelectronic Solutions

Abstract: rf sot89 50 MMA500
Contextual Info: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.

Contextual Info: MMA704X DC to 2.5 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA704X is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • •

Diode markings 79a

Abstract: BAW79D BAW78 BAW78D
Contextual Info: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW78D  BAW79D !  ! Type Package Configuration Marking BAW78D BAW79D SOT89 SOT89 single

SOT89 MARKING CODE 43

Contextual Info: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage BAW78D  BAW79D !  Type BAW78D BAW79D ! Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.

Contextual Info: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current

MMA710

Abstract: jc-70
Contextual Info: MMA710 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA710 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 4 GHz Broadband Gain Block

Contextual Info: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state

AM/mcl d01 94V0

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current

a1701

Abstract: MMA710
Contextual Info: MMA710 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA710 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 4 GHz Broadband Gain Block

MMA705

Contextual Info: MMA705 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA705 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 4 GHz Broadband Gain Block

MMA710

Contextual Info: MMA710X DC to 3 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA710X is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 3 GHz Broadband Gain Block

ZXTN19020DZ

Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Contextual Info: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor

MMA704

Abstract: rf sot89
Contextual Info: MMA704 DC to 3.7 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA704 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 3.7 GHz Broadband Gain Block

Contextual Info: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP

Contextual Info: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V  Case: SOT89  IC = -5.5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.

Contextual Info: MMA710X DC to 3 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA710X is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 3 GHz Broadband Gain Block

TS16949

Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Contextual Info: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

ZXTN2007Z

Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Contextual Info: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTP2014Z

Abstract: ZXTP2014ZTA
Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line