SOT363 MARKING CODE 385 Search Results

SOT363 MARKING CODE 7M

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5211DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These

MUN5111DW1T1

Abstract: MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 marking 52 sot-363 SOT 363 marking 67 MARKING 67 SOT-363
Contextual Info: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor

CMKD4448

Contextual Info: CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar

sot363 marking code 385

Abstract: CMKD4448 MARKING CODE 21
Contextual Info: Central CMKD4448 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES TM SOT-363 CASE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial

CMKD4448

Abstract: R3 marking code MARKING R3 sot363 marking code 385 marking code D3 SOT363 sot-363 MARKING
Contextual Info: CMKD4448 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-363 CASE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the

Contextual Info: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

Contextual Info: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small

SC70-6L

Abstract: marking 52 sot363 sot363 marking code 385 SOT-363 mosfet marking s1 sot363 marking 52 sot-363 mosfet 400 V 10A Dual N sot363 marking code ca MARKING CODE ca sot363
Contextual Info: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

Dual N-Channel mosfet sot-363

Abstract: diode 66a SSN1902 sot-363 n-channel mosfet 66a Diodes Dual N-Channel MOSFET
Contextual Info: SSN1902 Dual N-Channel Enhancement Mode MOSFET Product Summary SOT-363 6 RDS ON (mΩ) Max ID (A) 4 YW 385 @VGS = 4.5V 1 0.7A 20V 5 19 VDS (V) 2 630 @VGS = 2.5V 3 D1 (6) D2 (3) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.

Contextual Info: Central" CMKD4448 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in an

Contextual Info: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network

MARKING R7 SOT-363

Abstract: sot363 marking code 385 MIL-883 MARKING CODE R7 DIODE sot-363
Contextual Info: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small

PJ3L85

Contextual Info: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small

PJ3L85

Abstract: IEC-61000-4-2 MIL-883
Contextual Info: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These

zener n20

Abstract: dual diode N20
Contextual Info: NTJD4401NT1 Product Preview Power MOSFET 20 V Dual, N-Channel, Gate Zener, SC-88 This N-Channel dual device was designed with a small footprint package 2 X 2 mm with ON Semiconductor’s leading planar process for small footprint and increased circuit efficiency. The low figure of

Contextual Info: NTJD4101CT1 Product Preview Power MOSFET 20 V / 8.0 V Dual Complementary, SC-88 This complementary dual device was designed with a small package 2 X 2 mm and low RDS(on) MOSFETs for minimum footprint and increased circuit efficiency. The low RDS(on) performance is

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather

common emitter amplifier

Abstract: common collector amplifier circuit designing general purpose complementary transistors high voltage pnp npn transistors,pnp transistors 187 transistor npn 208 SOT-363 common base amplifier circuit common emitter amplifier circuit designing NPN/TRANSISTOR 187
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features •ăHigh Voltage and High Current: VCEO = 50 V, IC = 200 mA •ăHigh hFE: hFE = 200X400 •ăMoisture Sensitivity Level: 1 •ăESD Rating - Human Body Model: 3A

MARKING 46 SOT-363

Contextual Info: NTJD4401N Small Signal MOSFET 20 V, Dual N−Channel, SC−88 ESD Protection Features • • • • • http://onsemi.com Small Footprint 2 x 2 mm Low Gate Charge N−Channel Device ESD Protected Gate Same Package as SC−70 (6 Leads) Pb−Free Packages are Available

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly