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    SOT363 6 Search Results

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    SOT363 6 Price and Stock

    Nexperia 74LVC2G14GW,125

    Inverters SOT363-1 INVERTERS
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    TTI 74LVC2G14GW,125 Reel 579,000 3,000
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    Nexperia BAV99S,115

    Small Signal Switching Diodes DIODE-SS 100V 200MA SOT-363-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAV99S,115 Reel 450,000 3,000
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    Nexperia PMBT3946YPN,115

    Bipolar Transistors - BJT SOT363 40V .2A NPN/PNP BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMBT3946YPN,115 Reel 33,000 3,000
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    Vishay Intertechnologies SI1926DL-T1-E3

    MOSFETs 60V Vds 20V Vgs SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SI1926DL-T1-E3 Reel 30,000 3,000
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    ROHM Semiconductor UMH3NTN

    Digital Transistors DUAL NPN 50V 100MA SOT-363
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI UMH3NTN Reel 27,000 3,000
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    SOT363 6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SOT363

    Abstract: No abstract text available
    Text: SOT363 Vishay Semiconductors SOT363 Package Dimensions in mm Inches 14280 Document Number 84015 Rev. 1.2, 08-Dec-06 www.vishay.com 1 SOT363 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to


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    OT363 08-Dec-06 D-74025 SOT363 PDF

    BC847B

    Abstract: No abstract text available
    Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction   Two Internally Isolated NPN/PNP Transistors in One Package   Ideal for Medium Power Amplification and Switching Case: SOT363


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    BC847PN OT363 J-STD-020 MIL-STD-202, DS30278 BC847B PDF

    BC847PN

    Abstract: No abstract text available
    Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction   Two Internally Isolated NPN/PNP Transistors in One Package   Ideal for Medium Power Amplification and Switching Case: SOT363


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    BC847PN OT363 J-STD-020 MIL-STD-202, DS30278 BC847PN PDF

    L02ESD5V0D6-5

    Abstract: 15KV diode sot363
    Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE- 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES


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    L02ESD5V0D6-5 OT363 L02ESD5V0D6-5 OT363 15KV diode sot363 PDF

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    Abstract: No abstract text available
    Text: MMDT4413 COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction   Two Internally Isolated NPN/PNP Transistors in One Package  NPN = 4401 Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound.


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    MMDT4413 OT363 MIL-STD-202, DS30121 PDF

    Untitled

    Abstract: No abstract text available
    Text: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V  Case: SOT363  IC = 1A high Continuous Collector Current   ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound.


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    DSS8110Y OT363 J-STD-020 200mV DSS9110Y) MIL-STD-202, DS31679 PDF

    15KV

    Abstract: diode sot363
    Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES


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    L02ESD5V0D6-5 OT363 L02ESD5V0D6-5 OT363 100mV 15KV diode sot363 PDF

    BD5 diode

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES


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    L02ESD5V0D6-5 L02ESD5V0D6-5 OT363 OT363 100mV BD5 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT363 The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES


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    L02ESD5V0D6-5 L02ESD5V0D6-5 OT363 OT363 100mV PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • • • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020


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    MMDT3904 OT363 J-STD-020 MIL-STD202, AEC-Q101 DS30088 PDF

    nxp marking code SOT363

    Abstract: BAT54XY
    Text: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very


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    BAT54XY OT363 OT363 BAT54XY nxp marking code SOT363 PDF

    PBSS9110Y

    Abstract: No abstract text available
    Text: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features „ „ „ „ SOT363 package Low collector-emitter saturation voltage VCEsat


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    PBSS9110Y OT363 SC-88) OT363 PBSS9110Y PDF

    PBSS9110Y

    Abstract: No abstract text available
    Text: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 9 June 2004 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat


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    PBSS9110Y OT363 SC-88) OT363 PBSS9110Y PDF

    PBSS8110Y

    Abstract: PPBSS8110Y
    Text: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 2 June 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat


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    PBSS8110Y OT363 SC-88) OT363 PBSS8110Y PPBSS8110Y PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very


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    BAT54XY OT363 OT363 BAT54XY PDF

    C 102 transistor equivalent table

    Abstract: PBSS8110Y PPBSS8110Y
    Text: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features „ „ „ „ SOT363 package Low collector-emitter saturation voltage VCEsat


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    PBSS8110Y OT363 SC-88) OT363 PBSS8110Y C 102 transistor equivalent table PPBSS8110Y PDF

    sot363

    Abstract: SOT-363 12NC NXP 12NC ending nxp Tape and Reel Information NXP SOT363 Barcode label SOT363_125
    Text: SOT363 Reversed product orientation 12NC ending 125 Rev. 03 — 24 April 2009 Packing information 1. Packing method Fig. 1 Package version 12NC ending Reel dimensions d x w mm SPQ/PQ (pcs) Reels per box Outer box dimensions l x w x h (mm) SOT363 125 180 x 8.4


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    OT363 OT363-1 sot363 SOT-363 12NC NXP 12NC ending nxp Tape and Reel Information NXP SOT363 Barcode label SOT363_125 PDF

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat


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    PBSS9110Y OT363 SC-88) OT363 PBSS9110Y PDF

    Untitled

    Abstract: No abstract text available
    Text: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat


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    PBSS8110Y OT363 SC-88) OT363 PBSS8110Y PDF

    sot363 voltage controller

    Abstract: AEC-Q100 optocoupler mark K1 sot363 tlv431
    Text: A Product Line of Diodes Incorporated TLV431 1.24V COST EFFECTIVE SHUNT REGULATOR Description Pin Assignments TLV431_H6 SC70-6 [SOT363] The TLV431 is a three terminal adjustable shunt regulator offering excellent temperature stability and output current handling capability


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    TLV431 TLV431 SC70-6 OT363] DS32088 sot363 voltage controller AEC-Q100 optocoupler mark K1 sot363 PDF

    bga2714

    Abstract: MMIC marking code SC ba 458 smd 001119 204 02
    Text: BGA2714 MMIC wideband amplifier Rev. 01 — 24 May 2007 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.


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    BGA2714 OT363 BGA2714 MMIC marking code SC ba 458 smd 001119 204 02 PDF

    BGA2815

    Abstract: A1 marking code amplifier MMIC marking code 132 marking 64 amplifier marking code BV
    Text: BGA2815 MMIC wideband amplifier Rev. 2 — 19 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.


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    BGA2815 OT363 BGA2815 A1 marking code amplifier MMIC marking code 132 marking 64 amplifier marking code BV PDF

    BGA2866

    Abstract: MMIC marking 81 smd marking f2
    Text: BGA2866 MMIC wideband amplifier Rev. 2 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.


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    BGA2866 OT363 BGA2866 MMIC marking 81 smd marking f2 PDF

    mmic marking 865

    Abstract: BGA2850 marking 865 mmic marking 52 sot363 865 marking amplifier
    Text: BGA2850 MMIC wideband amplifier Rev. 2 — 29 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.


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    BGA2850 OT363 mmic marking 865 BGA2850 marking 865 mmic marking 52 sot363 865 marking amplifier PDF