PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OCR Scan
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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SRs SOT23
Abstract: BSS131 E6327 Q62702-S565 Q67000-S229 d01a
Text: Type BSS131 SIPMOS Small-Signal-Transistor Product Summary Feature • N-Channel • Enhancement mode V DS 240 V R DS on ,max 14 Ω ID 0.1 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS131 SOT23
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Original
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BSS131
OT-23
Q62702-S565
E6327
Q67000-S229
E6433
SRs SOT23
BSS131
E6327
Q62702-S565
Q67000-S229
d01a
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SOT23-5 marking 016
Abstract: A114 A115 MC74VHC1GT02
Text: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs MARKING DIAGRAMS 5 5 1 SC−88A/SC70−5/SOT−353 DF SUFFIX CASE 419A VJ M G G 1 5 5 VJ M G G 1 TSOP−5/SOT23−5/SC59−5 DT SUFFIX CASE 483 1 VJ = Device Code M
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Original
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MC74VHC1GT02
SC-88A/SC70-5/SOT-353
TSOP-5/SOT23-5/SC59-5
MC74VHC1GT02
MC74VHC1GT02/D
SOT23-5 marking 016
A114
A115
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Untitled
Abstract: No abstract text available
Text: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs MARKING DIAGRAMS 5 5 1 SC−88A/SC70−5/SOT−353 DF SUFFIX CASE 419A VJ M G G 1 5 5 VJ M G G 1 TSOP−5/SOT23−5/SC59−5 DT SUFFIX CASE 483 1 VJ = Device Code M
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MC74VHC1GT02
8A/SC70â
5/SOT23â
5/SC59â
MC74VHC1GT02
MC74VHC1GT02/D
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PDF
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KAE V9
Abstract: MMBD3004CQ-7-F MARKING yw SOT23
Text: MMBD3004A/C/S HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage Rating: 350V Low Reverse Current: Maximum of 100nA when VR = 240V at
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Original
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MMBD3004A/C/S
100nA
AEC-Q101
J-STD-020
DS30353
KAE V9
MMBD3004CQ-7-F
MARKING yw SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBD3004A/C/S HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage Rating: 350V Low Reverse Current: Maximum of 100nA when VR = 240V at Case: SOT23
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Original
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MMBD3004A/C/S
100nA
J-STD-020
MIL-STD-202,
DS30353
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PDF
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BAV23SQ-13-F
Abstract: KT7 marking diode BAV23AQ-7-F BAV23CQ-7-F BAV23C
Text: BAV23A/C/S SURFACE MOUNT HIGH VOLTAGE DUAL SWITCHING DIODE • • • • • • Mechanical Data • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion High Reverse Breakdown Voltage Low Leakage Current Lead, Halogen and Antimony Free, RoHS Compliant
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Original
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BAV23A/C/S
AEC-Q101
J-STD-020
BAV23A
BAV23C
BAV23S
DS30042
BAV23SQ-13-F
KT7 marking diode
BAV23AQ-7-F
BAV23CQ-7-F
BAV23C
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PDF
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marking NC sot23
Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
Text: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications
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OCR Scan
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OT-23
BFS18
BFS19
BFS20
BF840
BF841
BF579
BF536
BF767
BF824
marking NC sot23
smd code marking sot23
RF Transistors sot-23
marking code LA SMD
sot-23 MARKING CODE N C
SMD MARKING CODE FEW
SMD Transistors nc
SOT SMD IC
smd code marking 3 1 sot23
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PDF
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KL8 SOT-23
Abstract: KL7 SOT23 MARKING CODE kl7 marking W1 SOT-23 TSC Date Code marking RF sot-23 klb sot23 sot-23 diode marking code 20 marking code SD SOT23 sot-23 marking date code
Text: BAT54T/AD/CD/SD/BR 200mW Surface Mount Schottky Barrier Diode Small Signal Diode SOT-363 H J Features Fast switching speed I Low forward voltage drop Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant
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BAT54T/AD/CD/SD/BR
200mW
OT-363
OT-363
MIL-STD-202,
C/10s
KL8 SOT-23
KL7 SOT23
MARKING CODE kl7
marking W1 SOT-23
TSC Date Code marking
RF sot-23
klb sot23
sot-23 diode marking code 20
marking code SD SOT23
sot-23 marking date code
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PDF
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transistor c540
Abstract: C540 CMPT5401E CMPT5551E
Text: Central CMPT5401E TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown
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CMPT5401E
OT-23
150mV
CMPT5551E
150mA
100MHz
transistor c540
C540
CMPT5401E
CMPT5551E
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PDF
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BSS127S
Abstract: K29 mosfet BSS127 K28 SOT23
Text: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage
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BSS127
DS35476
BSS127S
K29 mosfet
BSS127
K28 SOT23
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PDF
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MMBD3004S
Abstract: DIODE MARKING CODE KAE J-STD-020A MMBD3004S-7
Text: MMBD3004S HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE SPICE MODEL: MMBD3004S NEW PRODUCT Features • · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion High Conductance High Reverse Breakdown Voltage Rating SOT-23 A Mechanical Data
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Original
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MMBD3004S
OT-23
OT-23,
DS30353
MMBD3004S
DIODE MARKING CODE KAE
J-STD-020A
MMBD3004S-7
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PDF
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c555
Abstract: marking sot-23 CMPT5401E CMPT5551E
Text: Central CMPT5551E TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551E is an NPN Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown
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Original
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CMPT5551E
OT-23
100mV
CMPT5401E
150mA
100MHz
c555
marking sot-23
CMPT5401E
CMPT5551E
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PDF
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DS30149
Abstract: BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE
Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
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Original
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BSS84
-130mA
AEC-Q101
DS30149
BSS84
BSS84 Equivalent
BSS84Q-7-F
BSS84 MARKING CODE
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PDF
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diode SPICE model
Abstract: J-STD-020A MMBD2004S MMBD2004S-7 MMBD2004S-7-F marking KA9 SOT23
Text: MMBD2004S HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE SPICE MODEL: MMBD2004S Features • · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion High Reverse Breakdown Voltage Dual Series Configuration SOT-23 A B Mechanical Data
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Original
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MMBD2004S
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
com/datasheets/ap02007
MMBD2004S-7-F.
DS30281
diode SPICE model
J-STD-020A
MMBD2004S
MMBD2004S-7
MMBD2004S-7-F
marking KA9 SOT23
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PDF
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BSS123Q-13
Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating
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Original
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BSS123
DS30366
BSS123Q-13
bss123 c23
K23 SOT23
K23 mOSFET
BSS123Q-7
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery
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DMN3730U
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C
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Original
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DMN2300U
AEC-Q101
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PDF
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G21 SOT23
Abstract: No abstract text available
Text: Product specification DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A V(BR)DSS -20V Features • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed
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DMG2301U
AEC-Q101
G21 SOT23
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marking code C4 Sot 23-5
Abstract: sot143 marking code A5 2805 diode bridge Marking Code ABC SOT 143 footprint SOT-363 a7 DIODES SC-70 MARKING C3 Analog devices code marking AB marking code tc sot 363 diode marking code C3 sot23
Text: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options
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Original
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HSMS-280x
OT-23/SOT-143
d70-3
OT-363
SC70-6
5968-7960E
5989-0474EN
marking code C4 Sot 23-5
sot143 marking code A5
2805 diode bridge
Marking Code ABC
SOT 143 footprint
SOT-363 a7
DIODES SC-70 MARKING C3
Analog devices code marking AB
marking code tc sot 363
diode marking code C3 sot23
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PDF
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SOT23 PAB
Abstract: No abstract text available
Text: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) max Features • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMP2004K
-150mA
-430mA
AEC-Q101
DS30933
SOT23 PAB
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • 30V Description and Applications • • This new generation MOSFET has been designed to minimize the
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DMN3051L
AEC-Q10
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A -12V Low On-Resistance Low Input Capacitance Fast Switching Speed
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DMP1045U
AEC-Q101
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sot-23 body marking DAB
Abstract: DMN5L06KQ-7
Text: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS ADVANCE INFORMATION Features and Benefits • • • • • • • • • 50V Description and Applications Low On-Resistance
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Original
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DMN5L06K
AEC-Q101
DS30929
621-DMN5L06K-7
DMN5L06K-7
sot-23 body marking DAB
DMN5L06KQ-7
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PDF
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