SOT23 MARK U3 Search Results

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

MMBZ5239B

Abstract: 712 DIODE marking sot23 MMBZ5245B 5252B
Contextual Info: SEMICONDUCTOR MMBZ5221B~5252B TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. E B L L FEATURES D ・Small Package : SOT-23. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Q P D* 300 mW

5252B

Abstract: MARK 8E diode zener 8w L MMBZ5227B 8B MMBZ5250B Zener diode 81A MARK 8F MMBZ5251B MARKING 8F MMBZ5231B MMBZ5222B
Contextual Info: MMBZ5221B~5252B SEMICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES E B L L 3 G H A 2 D ・Small Package : SOT-23. 1 MAXIMUM RATING Ta=25℃ UNIT PD* 300

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

XP202A

Abstract: XP202A0003 single diode sot-23 mark pd A9 marking diode sot23 12Represents sot-23 single diode mark PD SOT-23 MOSFET P-CHANNEL a1 1- mark
Contextual Info: XP202A0003MR-G ETR1128-003 P-channel 4V G-S MOSFET •FEATURES ■APPLICATIONS ・Low On Resistance ・Ultra High Speed Switching ・4V Driving ・EU RoHS Compliant, Pb Free ● Switching ■PRODUCT NAME * ■ ABSOLUTE MAXIMUM RATINGS PARMETER SYMBOL RATINGS

BSS64

Abstract: 01BV CJE SOT-23
Contextual Info: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

KRA221S

Contextual Info: SEMICONDUCTOR KRA221S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ・With Built-in Bias Resistors. E B L L ・Simplify Circuit Design. ・High Output Current :-800mA.

Contextual Info: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D ・For Complementary With PNP Type BC859/860. H MAXIMUM RATING Ta=25℃ BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage

Contextual Info: SEMICONDUCTOR KTN2369S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. E B L L FEATURES ・Excellent Switching Characteristics. D ・Excellent High Frequency Characteristics. 3 H G A 2 1 Q P K J N C P DIM A B C D E G H J

marking ZI SOT

Abstract: KTN2369AS KTN2369S
Contextual Info: SEMICONDUCTOR KTN2369S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES E B L L ・Excellent Switching Characteristics. 3 H G A 2 1 P J N CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage

SOT-23

Contextual Info: 管理計画 SOT-23 CONTROL PLAN (SOT-23) ﾄﾚｯｸｽ・ｾﾐｺﾝﾀﾞｸﾀｰ株式会社 代表例 TOREX SEMICONDUCTOR LTD. 工程記号 No. 工程名 Flow Process 1 ｳｴﾊ受入 ◇ Wafer incoming 2 酸化 ○ Oxide 3 酸化膜ﾁｪｯｸ

BC857

Contextual Info: SEMICONDUCTOR BC856/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E B L L FEATURES D ・For Complementary With NPN Type BC846/847/848. H MAXIMUM RATING Ta=25℃ 3 G A 2 1 Q P Collector-Base Voltage

NPN transistor marking NY

Contextual Info: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

KRC231S

Abstract: KRC232S KRC233S KRC234S KRC235S
Contextual Info: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

KDR411S

Abstract: MARKING U3
Contextual Info: SEMICONDUCTOR KDR411S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking U3 No. 1 Item Marking Device Mark U3 KDR411S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

BC817

Contextual Info: SEMICONDUCTOR BC817 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L FEATURES D ・Complementary to BC807. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Q UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage

BC807A-40

Abstract: 1P TRANSISTOR MARK BC807A BC817A
Contextual Info: SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L 3 H G A 2 D ・Complementary to BC817A. 1 MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage

BC817A

Contextual Info: SEMICONDUCTOR BC817A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L FEATURES L D ・Complementary to BC807A. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage

BC807A

Contextual Info: SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L FEATURES L D ・Complementary to BC817A. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage

sot 23 zwa

Abstract: SOT23 MARKING ZWA KN4403S zwa sot23 KN4402S zva 003 MARK CB SOT23 zwa Marking ZWA SOT-23 TRANSISTOR zwa
Contextual Info: SEMICONDUCTOR KN4402S/4403S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D ・Complementary to the KN4400S/4401S 3 H G A 2 1 Q P UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage

SOT23 MARK u3

Abstract: BF242
Contextual Info: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

maxim CODE TOP MARKING

Abstract: MAX6326R31-T
Contextual Info: MAX6326/MAX6327/ MAX6328/MAX6346/ MAX6347/MAX6348 3-Pin, Ultra-Low-Power SC70/SOT P Reset Circuits General Description The MAX6326/MAX6327/MAX6328/MAX6346/MAX6347/ MAX6348 microprocessor µP supervisory circuits monitor the power supplies in µP and digital systems. These

Contextual Info: SEMICONDUCTOR KRA109S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E B L L FEATURES ・Simplify Circuit Design. D ・With Built-in Bias Resistors. 2 H A 3 G ・Reduce a Quantity of Parts and Manufacturing Process.

KRC281S

Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)