SOT223 TRANSISTOR Search Results

Contextual Info: Philips Semiconductors Product specification NPN power transistor BDP31 FEATURES • SOT223 package. DESCRIPTION NPN power transistor in a plastic SOT223 package for general purpose, medium power applications. PNP complement is BDP32. PINNING - SOT223 PIN

56359B

Contextual Info: MOUNTING INSTRUCTIONS Page SOT223 1140 SOT186; SOT263; T0220AB 1152 Philips Semiconductors Mounting instructions SOT223 TAPE and REEL PACKING SOT223 Tape and reel packing meets the feed requirements of automatic pick and place equipment (packing conforms

PZT2907

Contextual Info: 1.5W SOT223 BIPOLAR TRANSISTORS HIGH POWER TRANSISTORS SOT223 PACKAGE The latest comprehensive data to fully support these parts is readily available. SOT223 6.5 0°-7° 1.6 3.0 7.0 max 3.5 B C E 2.3 0.7 15° 15° 0.65 0.32 max 4.6 4.6 2.0 min 6.3 2.3 1.5 min

Contextual Info: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general

ic tba 500

Abstract: FZTA14 FZTA64 TBA 100
Contextual Info: SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 5– MARCH 2001 ✪ PARTMARKING DETAILS: FZTA64 COMPLIMENTARY TYPE: FZTA14 FZTA64 4 3 2 1 SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO

BDS201

Abstract: USM35 BDS77 16Oi BDS203 BDS20 IEC134 UBB012
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BDS201/203/77 NPN Silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN Silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

TOP 948

Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
Contextual Info: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

Contextual Info: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL:- DEVICE TYPE IN FULL COMPLEMENTARY TYPE :- FZTA64 C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage VCES Collector-Base Voltage

design ideas

Abstract: TS16949 ZXTN5551G ZXTP5401G
Contextual Info: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package

Contextual Info: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package

zxtP

Abstract: Bv 42 transistor ZXTP2008GTA
Contextual Info: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

m lc 945

Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

BDS77

Abstract: BDS201 BDS203 IEC134 USM35
Contextual Info: Philips Components Datasheet status Product specification date of issu* April 1991 BDS201/203/77 NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 NPN Silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

sot223 device Marking

Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
Contextual Info: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in

ZXTP25 20V 6A

Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
Contextual Info: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

sot223 transistor

Abstract: partmarking 5 C PARTMARKING at FMMT38C FZTA14 FZTA64 DSA003719
Contextual Info: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL:- DEVICE TYPE IN FULL COMPLEMENTARY TYPE :- FZTA64 C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCES 30 V Collector-Base Voltage

X5T949

Abstract: sot223 transistor pinout ZX5T949G
Contextual Info: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in

ZXTP19060CG

Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
Contextual Info: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

ZXTN2005G

Abstract: ZXTN2005GTA ZXTN2005GTC
Contextual Info: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

marking 8A sot223

Abstract: TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA
Contextual Info: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

sot223 transistor pinout

Abstract: sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP
Contextual Info: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

zxtn

Abstract: sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA
Contextual Info: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

X5T955

Abstract: "PNP Transistor" ZX5T955G ZX5T955GTA ZX5T955GTC
Contextual Info: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in

ZXTN25020DG

Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
Contextual Info: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor