zxtP
Abstract: Bv 42 transistor ZXTP2008GTA
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2008G
OT223
OT223
ZXTP2008GTA
ZXTP2008GTC
522-ZXTP2008GTA
ZXTP2008GTA
zxtP
Bv 42 transistor
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sot223 device Marking
Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T869G
OT223
OT223
sot223 device Marking
transistor 355
ZX5T869G
ZX5T869GTA
ZX5T869GTC
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X5T949
Abstract: sot223 transistor pinout ZX5T949G
Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T949G
OT223
OT223
ZX5T949GTA
X5T949
sot223 transistor pinout
ZX5T949G
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ZXTN2005G
Abstract: ZXTN2005GTA ZXTN2005GTC
Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2005G
OT223
OT223
ZXTN2005G
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sot223 transistor pinout
Abstract: sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2008G
OT223
OT223
ZXTP2008GTA
ZXTP2008GTC
sot223 transistor pinout
sot223 device Marking
ZXTP2008G
ZXTP2008GTA
ZXTP2008GTC
zxtP
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zxtn
Abstract: sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA
Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2005G
OT223
OT223
R26100
zxtn
sot223 device Marking
ZXTN2005GTC
ZXTN2005G
ZXTN2005GTA
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X5T955
Abstract: "PNP Transistor" ZX5T955G ZX5T955GTA ZX5T955GTC
Text: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T955G
OT223
-140V
OT223
ZX5T955GTA
ZX5T955GTC
X5T955
"PNP Transistor"
ZX5T955G
ZX5T955GTA
ZX5T955GTC
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zxtP
Abstract: ZXTP2014G ZXTP2014GTA ZXTP2014GTC
Text: ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2014G
OT223
-140V
OT223
ZXTP2014GTA
ZXTP2014GTC
zxtP
ZXTP2014G
ZXTP2014GTA
ZXTP2014GTC
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X5T849
Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
Text: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T849G
OT223
OT223
X5T849
ZX5T849G
ZX5T849GTA
ZX5T849GTC
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X5T851
Abstract: bv 42 TRANSISTOR equivalent
Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T851G
OT223
OT223
522-ZX5T851GTA
ZX5T851GTA
X5T851
bv 42 TRANSISTOR equivalent
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sot223 device Marking
Abstract: npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC
Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T869G
OT223
OT223
Q26100
sot223 device Marking
npn 20A
ZX5T869G
ZX5T869GTA
ZX5T869GTC
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT605 120V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 120V Case: SOT223 BVCBO > 140V Case material: molded plastic. “Green” molding compound. IC = 1.5A High Continuous current
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FZT605
OT223
J-STD-020
AEC-Q101
MIL-STD-202,
DS33147
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ZXTN2007G
Abstract: ZXTN2007GTA ZXTN2007GTC zxtn
Text: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2007G
OT223
OT223
ZXTN2007G
ZXTN2007GTA
ZXTN2007GTC
zxtn
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ZXTN2010GTA
Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010G
OT223
OT223
ZXTN2010GTA
ZXTN2010G
ZXTN2010GTC
Bv 42 transistor
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Bv 42 transistor
Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2013G
OT223
-100V
OT223
ZXTP2013GTA
ZXTP2013GTC
DEV26100
Bv 42 transistor
zxtP
sot223 device Marking
ZXTP2013G
ZXTP2013GTA
ZXTP2013GTC
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT692B 70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 70V BVCBO > 70V IC = 2.0A High Continuous current Case: SOT223 Case material: molded plastic. “Green” molding compound.
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FZT692B
OT223
AEC-Q101
J-STD-020
MIL-STD-202cknowledge
DS33157
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Untitled
Abstract: No abstract text available
Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010G
OT223
OT223
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ZXTN
Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010G
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INFORMAT26100
ZXTN
ZXTN2010GTA
ZXTN2010G
ZXTN2010GTC
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ZX5T851G
Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T851G
OT223
OT223
ZX5T851G
ZX5T851GTA
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Bv 42 transistor
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.
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FZT957
OT223
-300V
-240mV
FZT857
J-STD-020
MIL-STD-202,
DS33191
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ZXTN2011G
Abstract: ZXTN2011GTA ZXTN2011GTC
Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2011G
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ZXTN2011GTA
ZXTN2011GTC
ZXTN2011G
ZXTN2011GTA
ZXTN2011GTC
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Untitled
Abstract: No abstract text available
Text: OBSOLETE ALTERNATIVE IS ZXTN2005G ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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ZXTN2005G
ZX5T869G
OT223
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ZX5T869GTA
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56359B
Abstract: No abstract text available
Text: MOUNTING INSTRUCTIONS Page SOT223 1140 SOT186; SOT263; T0220AB 1152 Philips Semiconductors Mounting instructions SOT223 TAPE and REEL PACKING SOT223 Tape and reel packing meets the feed requirements of automatic pick and place equipment (packing conforms
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OT223
OT186;
OT263;
T0220AB
OT223
OT223)
56359B
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Untitled
Abstract: No abstract text available
Text: Philip» Semiconductors Mounting instructions SOT223 TAPE and REEL PACKING SOT223 Tape and reel packing meets the feed requirements of automatic pick and place equipment (packing conforms to IEC publication 286). The tape is an ideal shipping container, making handling easy and providing secure
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OT223
OT223)
OT223
7777K
OT186;
OT263;
T0220AB
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