diode 78a
Abstract: tr 30 f 124 BAS78A BAS78B BAS78C BAS78D VPS05163 DIODE marking 78A
Text: BAS78A.BAS78D Silicon Switching Diodes Switching applications 4 High breakdown voltage 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78B BAS 78B 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78C
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BAS78A.
BAS78D
VPS05163
EHA00004
BAS78A
OT223
BAS78B
BAS78C
diode 78a
tr 30 f 124
BAS78A
BAS78B
BAS78C
BAS78D
VPS05163
DIODE marking 78A
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68A diode
Abstract: BSP316P
Text: BSP 316 P Preliminary data SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -100 V 1.8 Ω -0.68 A P-SOT223-4-1 Drain pin 2/4 Gate pin1 Source pin 3 Type Package BSP 316 P P-SOT223-4-1
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P-SOT223-4-1
Q67042-S4165
BSP316P
68A diode
BSP316P
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Q67042-S4165
Abstract: No abstract text available
Text: BSP 316 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -100 V 1.8 Ω -0.68 A P-SOT223-4-1 Drain pin 2/4 Gate pin1 Source pin 3 Type Package BSP 316 P P-SOT223-4-1
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P-SOT223-4-1
Q67042-S4165
BSP316P
-200A/
Q67042-S4165
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Untitled
Abstract: No abstract text available
Text: BSP 316 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -100 V 1.8 Ω -0.68 A PG-SOT223-4-1 Drain pin 2/4 Gate pin1 Source pin 3 Type Package Ordering Code BSP 316 P PG-SOT223-4-1 Q67042-S4165
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PG-SOT223-4-1
PG-SOT223-4-1
Q67042-S4165
BSP316P
-200A/
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MCR08BT1
Abstract: No abstract text available
Text: SO T2 23 MCR08BT1 Thyristor; logic level Rev. 4 — 2 November 2011 Product data sheet SOT223 1. Product profile 1.1 General description Passivated, sensitive gate thyristor in a SOT223 plastic package. 1.2 Features and benefits Sensitive gate Surface mount package.
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MCR08BT1
OT223
OT223
sym037
SC-73)
MCR08BT1
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Untitled
Abstract: No abstract text available
Text: PZTA42 NPN Silicon High-Voltage Transistors • High breakdown voltage • Low collector-emitter saturation voltage 4 3 2 • Complementary type: PZTA92 PNP Type PZTA42 Marking PZTA42 1=B 1 Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings
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PZTA42
PZTA92
PZTA42
OT223
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BSP50
Abstract: BSP51 BSP52 BSP60 BSP50-BSP52
Text: BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage 4 3 2 • Complementary types: BSP60 - BSP52 PNP 1 Type Marking Pin Configuration Package BSP50 BSP50 1=B 2=C 3=E 4=C - - SOT223 BSP51
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BSP50-BSP52
BSP60
BSP52
BSP50
OT223
BSP51
BSP50
BSP51
BSP52
BSP50-BSP52
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PZTA42
Abstract: PZTA92 VPS05163
Text: PZTA92 PNP Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA42 NPN 3 2 1 Type Marking PZTA92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings
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PZTA92
PZTA42
VPS05163
OT223
EHP00346
EHP00735
Dec-12-2001
EHP00736
PZTA42
PZTA92
VPS05163
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PZTA92
Abstract: BCP52-16 E6327 PZTA42 VPS05163 PZTA92 E6433
Text: PZTA92 PNP Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA42 NPN 3 2 1 Type Marking PZTA92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings
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PZTA92
PZTA42
VPS05163
OT223
PZTA92
BCP52-16
E6327
PZTA42
VPS05163
PZTA92 E6433
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BSP62
Abstract: No abstract text available
Text: BSP60 . BSP62 PNP Silicon Darlington Transistors High collector current 4 Low collector-emitter saturation voltage Complementary types: BSP50 . BSP52 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223
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BSP60
BSP62
BSP50
BSP52
VPS05163
BSP60
BSP61
BSP62
OT223
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Untitled
Abstract: No abstract text available
Text: PZTA92 PNP Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA42 NPN 3 2 1 Type Marking PZTA92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings
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PZTA92
PZTA42
VPS05163
OT223
Dec-12-cal
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PZTA42
Abstract: PZTA92 VPS05163
Text: PZTA42 NPN Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA92 PNP 3 2 1 Type Marking PZTA42 PZTA 42 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings
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PZTA42
PZTA92
VPS05163
OT223
EHP00320
EHP00724
Jun-29-2001
EHP00725
PZTA42
PZTA92
VPS05163
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MARKING BSP52
Abstract: bsp52
Text: BSP50 . BSP52 NPN Silicon Darlington Transistors High collector current 4 Low collector-emitter saturation voltage Complementary types: BSP60 . BSP62 PNP 3 2 1 Pin Configuration VPS05163 Type Marking Package BSP50 BSP 50 1=B 2=C 3=E 4=C SOT223
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BSP50
BSP52
BSP60
BSP62
VPS05163
BSP50
BSP51
BSP52
OT223
MARKING BSP52
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Untitled
Abstract: No abstract text available
Text: PZTA42 NPN Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA92 PNP 3 2 1 Type Marking PZTA42 PZTA 42 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings
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PZTA42
PZTA92
VPS05163
OT223
Jun-29-cal
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Untitled
Abstract: No abstract text available
Text: PZTA92 PNP Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA42 NPN 3 2 1 Type Marking PZTA92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings
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PZTA92
PZTA42
VPS05163
OT223
Jun-29-ax
EHP00346
EHP00735
Jun-29-2001
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BCP62
Abstract: No abstract text available
Text: BSP60-BSP62 PNP Silicon Darlington Transistor • High collector current • Low collector-emitter saturation voltage 4 3 2 • Complementary types: BSP50.BSP52 NPN 1 Type Marking Pin Configuration Package BSP60 BSP60 1=B 2=C 3=E 4=C - - SOT223 BSP61 BSP61
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BSP60-BSP62
BSP50.
BSP52
BSP60
BSP61
BSP62
BSP62
OT223
BCP62
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MARKING BSP52
Abstract: VPS05163 BSP50 BSP51 BSP52 BSP60 BSP62
Text: BSP50 . BSP52 NPN Silicon Darlington Transistors High collector current 4 Low collector-emitter saturation voltage Complementary types: BSP60 . BSP62 PNP 3 2 1 Type Marking Pin Configuration BSP50 BSP 50 1=B 2=C 3=E 4=C SOT223 BSP51 BSP 51 1=B
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BSP50
BSP52
BSP60
BSP62
OT223
BSP51
MARKING BSP52
VPS05163
BSP50
BSP51
BSP52
BSP60
BSP62
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m lc 945
Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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BDS943/945/947
OT223)
BDS944/946/948.
OT223
BDS943
BDS945
BDS947
m lc 945
945 npn
947 smd
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BDS77
Abstract: BDS201 BDS203 IEC134 USM35
Text: Philips Components Datasheet status Product specification date of issu* April 1991 BDS201/203/77 NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 NPN Silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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BDS201/203/77
OT223)
BDS202/204/78.
OT223
BDS201
BDS203
BDS77
IEC134
USM35
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T79 SMD
Abstract: BDS949 BDS951 BDS953 BDS955 951 pnp sot223 t7 sot223
Text: Datasheet statu* Product specification date of issue April 1991 B D S 949/ 951/953/9S5 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended for general
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BDS949/951/953/9S5
OT223)
BDS950/952/954/956.
OT223
BDS949
BDS951
BDS953
BDS955
T79 SMD
951 pnp sot223
t7 sot223
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BFG35
Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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BFG35
OT223
OT223.
MSA035
TRANSISTOR FQ
BFG35 amplifier
BHS111
npn 2222 transistor
TRANSISTOR NPN c4 nf
C2570
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BFG35 amplifier
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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OT223
I3FG55.
BFG35
OT223.
MBB364
BFG35 amplifier
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN high voltage transistor FEATURES PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a 4-lead SOT223 surface mounting package, especially suitable for use
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PZTA44;
PZTA45
OT223
OT223
PZTA44
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PZTA45
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN high voltage transistor FEATURES PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a 4-lead SOT223 surface mounting package, especially suitable for use
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PZTA44;
PZTA45
OT223
PZTA44
PZTA45
350uration
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