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    SOT171 OUTLINE Search Results

    SOT171 OUTLINE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SOT171 OUTLINE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLV97CE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171


    Original     		PDF BLV97CE OT171 BLV97CE

    BLV97CE

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171


    Original     		PDF BLV97CE OT171 MDA443 OT171A BLV97CE

    xl 6009

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV920 UHF power transistor Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors 1995 Apr 10 Philips Semiconductors Product specification UHF power transistor BLV920 FEATURES DESCRIPTION


    Original     		PDF BLV920 SC08a BLV920 OT171 SCD38 123052/1500/01/pp12 xl 6009

    xl 6009

    Abstract: MLC660 MLC662 L6 PHILIPS 4894 BLV910
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and


    Original     		PDF BLV910 OT171 SCD38 123052/1500/01/pp12 xl 6009 MLC660 MLC662 L6 PHILIPS 4894 BLV910

    film dielectric trimmer PTFE

    Abstract: 2222 031 capacitor philips 2222 424 BLV934 xl 6009 gp 722 MLC679
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV934 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and


    Original     		PDF BLV934 OT171 SCD38 123052/1500/01/pp12 film dielectric trimmer PTFE 2222 031 capacitor philips 2222 424 BLV934 xl 6009 gp 722 MLC679

    mda540

    Abstract: BLV100
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES BLV100 PIN CONFIGURATION • Internal input matching to achieve high power gain • Ballasting resistors for an optimum


    Original     		PDF BLV100 OT171 mda540 BLV100

    MRA250

    Abstract: BLF522 MRA990
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF522 PIN CONFIGURATION • High power gain • Easy power control • Gold metallization


    Original     		PDF BLF522 MBB072 OT171 MRA250 BLF522 MRA990

    MRA359

    Abstract: MDA536 BLV103 MRA364
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for


    Original     		PDF BLV103 MRA359 MDA536 BLV103 MRA364

    mrc102

    Abstract: MRC100 mrc101 MRC103 BLV194
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures


    Original     		PDF BLV194 OT171 mrc102 MRC100 mrc101 MRC103 BLV194

    BLF542

    Abstract: MBB778
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain


    Original     		PDF BLF542 SC08b MBB072 OT171 BLF542 MBB778

    BLF542

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain • Easy power control halfpage


    Original     		PDF BLF542 MBB072 OT171 BLF542

    122d

    Abstract: BLU98 ON4612 sot37 172d BLV100
    Text: 62 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 MHz Package Outline Type No. Load Power W @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 0.075 0.075 0.16 0.16 0.4 0.75 0.8 1.2 1 1.5 1.5 3 0.75 1.5 3 6 7.5 9.5 7 9 6.8 5.3 6 6 7


    OCR Scan     		PDF BFR90A BFG90A BFR91A BFG91A BLU98 BLV90 BLT80 BLT81 BLV90/SL BLV91/SL 122d ON4612 sot37 172d BLV100

    sot123 package

    Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
    Text: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ


    OCR Scan     		PDF BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 sot123 package BLF543 BLF221 sot 123 flange SOT-123

    SOT123 Package

    Abstract: BLV62 BLW33 BLX98 BLF147 BLF175 SOT-48 bfr96s SOT123
    Text: 64 RF/Microwave Devices Bipolar RF Transmitting Transistors TV Transposers/Transmitters co n t. Type No. Output Power @ djm Package Outline SYNC (W) (dB) Output Power P0 - IdB (W) Power Gain (dB) Supply Voltage (V) 115 225 11 9.0 28 35 10 11 11 6 10 10 5.5


    OCR Scan     		PDF BLV36 BLV38 OT-161, OT-179, BFR96S BFQ34 BLW32 BLX96 BFQ68 BLW33 SOT123 Package BLV62 BLX98 BLF147 BLF175 SOT-48 SOT123

    T119 A

    Abstract: sot 122 SOT123 Package BLW78
    Text: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain


    OCR Scan     		PDF 4-26V BLV97CE BLV101A BLV101B BLV948 OT-171, OT-273, OT-262A2, 2N3866 T119 A sot 122 SOT123 Package BLW78

    BLF542

    Abstract: UBB776
    Text: Philips Semiconductors 003010b HR M APX Product specification UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES b^E T> PIN CONFIGURATION • High power gain • Easy power control o • Gold metallization • Good thermal stability • Withstands full load mismatch


    OCR Scan     		PDF GG3G10b BLF542 OT171 PINNING-SOT171 MBA931 MRA733 BLF542 UBB776

    71009 SB

    Abstract: BLV100 71108Sb 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: . Philips Semiconductors • 7110asb DOtaBlDQ T71 ■ I P H I N 1 •*J PHILIPS INTERNATIONAL UHF power transistor _ . , . Product specification bSE D BLV100 PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an


    OCR Scan     		PDF 71108Sb BLV100 OT171 -SOT171 CA91E 71009 SB BLV100 35 W 960 MHz RF POWER TRANSISTOR NPN

    TIC 122 Transistor

    Abstract: sot171 outline heatsink catalogue SOT171 BLV910 TIC 220 MLC663
    Text: Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is


    OCR Scan     		PDF BLV910 OT171 OT171 MBA45Ã OT171. 71ina2t TIC 122 Transistor sot171 outline heatsink catalogue SOT171 BLV910 TIC 220 MLC663

    BLF522

    Abstract: URA417 4312 020 366 3909
    Text: Philips Semiconductora Product specification UHF power MOS transistor BLF522 PHILIPS IN T E RN AT IO NA L FEATURES 7 1 3 ,0 fi2 b OOMaTMS STQ M P H I N PIN CONFIGURATION High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch


    OCR Scan     		PDF OT171 OT171 BLF522 711Dfl2b 711005b BLF522 URA417 4312 020 366 3909

    itt 2222

    Abstract: tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors
    Text: PhHip^emiconductor^^^ _ bbSBIBl 003G12b TD7 H AP X ^Pjoduc^pecjficatjon UHF power MOS transistor ^ BLF544 N AMER P H I L I P S / D I S C R E T E bTE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures


    OCR Scan     		PDF 003G12b BLF544 OT171 MCA836 itt 2222 tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors

    transistor tt 2222

    Abstract: TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322
    Text: Philips Sem iconductors [^ 5 3 ^ 3 1 0030115 121 • APX ^ ro d u c ts p e c m Ä BLF543 UHF power MOS transistor b * ìE N AMER P H I L I P S / D I S C R E T E D ' PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability


    OCR Scan     		PDF bbS3T31 OT171 PINNING-SOT171 BLF543 MCA90E transistor tt 2222 TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures


    OCR Scan     		PDF BLF544 OT171

    PQ-32/MCA908

    Abstract: No abstract text available
    Text: Philips Semiconductors 0030115 121 • A P X ^ S i a S S i S S S t,h 5 3 m UHF power MOS transistor ^ BLF543 N AMER PHILIPS/DISCRETE b^E » ' PIN CONFIGURATION FEATURES • High power gain • Easy power control / -\ • Good thermal stability o • Gold metallization ensures


    OCR Scan     		PDF BLF543 OT171 D03D125 MCA905 PQ-32/MCA908

    BLF543

    Abstract: 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips
    Text: Product specification Philips Semiconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF543 SbE D • 711Dfl2b 50b « P H I N PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability


    OCR Scan     		PDF BLF543 711Dfl5b OT171 OT171 BLF543 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips