SOT-89 COMMON ANODE DIODE Search Results

Contextual Info: BAW56T Monolithic Dual Swithcing Diode Common Anode SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead Pb -Free Features: * We Declare that the Material of Product Compliance With RoHS Requirements SOT-523F(SC-89) SOT-523F Outline Dimensions (SC-89) Unit:mm A

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

BC327 BC337 noise figure

Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The LDAP222T1 device is housed in the SC-89 package which is designed

476A diode

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode LBAV70LT1G • Pb−Free Package is Available. 3 MAXIMUM RATINGS TA = 25°C 1 Rating Symbol Max Unit Reverse Voltage Forward Current Peak Forward Surge Current VR IF 70 200 500 Vdc

TVS Transient Voltage Suppressors

Abstract: TVS SOD-123 SA5* sot-23 258 sot MMBZ5221ELT1 MM3Z2V4S
Contextual Info: Table of Contents Page Page Numeric Data Sheet Listing Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Chapter 3: Case Outlines and Package Dimensions Chapter 1: Selector Guide Case Outlines and Package Dimensions . . . . . . . . . . . . 280

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode • Pb−Free Package is Available. LBAW56LT1G 1 CATHODE 3 ANODE 2 CATHODE 3 ORDERING INFORMATION Device PACKAGE Shipping 1 LBAW56LT1G SOT-23 3000 Tape & Reel 2 LBAW56LT3G SOT-23 10000 Tape & Reel

RB110C

Abstract: diode 1436 DAN202KRVA c1251
Contextual Info: RO H M CORP 07E D | T f i S ñ ' m O D D E S T % ' 4 | tk Variable Capacitance Diodes EVariable Capacitance Diodes Electrical Characteristics Ta=25°C fi I Î I =25ÙC) Vr m VR Tj Tstg (V) (V) t°C) i°C) 1SV205 35 30 120 —3 0-12 0 1SV207 35 30 120 -3 0 -1 2 0

automatic heat detector project report

Abstract: transistor equivalent 0107 NA BC237 MIL-STD-750 method 1037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital

Contextual Info: PRELIMINARY MTUFS300600ST6 300A, 600V, Non-Isolated Power Rectifier Module AVAILABILITY: • SOT-227, 4 Lead, Metric screw terminals  Industrial Temp  Mil‐Temp FEATURES:  Non‐Isolated Package  Ultra‐Fast, Rectifier <75ns

DECT transmitter siemens

Abstract: BAR63 BAR63-04 DECT siemens SIEMENS MICROWAVE RADIO 8 GHz 6 GHz SMD PIN diode
Contextual Info: Knut Brenndörfer ● Jörg Lützner Antenna switches with PIN diodes for digital mobile communications In handhelds for digital mobile and cordless telephone systems, such as GSM and DECT, PIN diodes are starting to replace conventional duplex filters in the transmit/receive switch. For this

Characteristic curve BC107

Abstract: TRANSISTOR 308B BC237 BC307 BC108 characteristic bc307b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage

IGBT Battery 120 watt Charger circuit diagrams

Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
Contextual Info: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .

MPF910 equivalent

Abstract: .model for MPF910 BC237 TRANSISTOR mpf910
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF910 N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID IDM 0.5 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C

2N6284 inverter schematic diagram

Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Contextual Info: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital

SOT186A package

Abstract: Tj-102
Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR1545CTF, PBYR1545CTX series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance

STP4119

Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Contextual Info: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices

power tmos

Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
Contextual Info: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003  SCILLC, 2003 Previous Edition  2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further