MBC13720 application notes
Abstract: 4-611 motorola
Text: Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking Package MBC13720T1 20 SOT-363 The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz
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MBC13720/D
MBC13720
OT-363)
MBC13720T1
OT-363
MBC13720
OT-363
MBC13720/D
MBC13720 application notes
4-611 motorola
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marking 47 gain block sot-363
Abstract: S1239
Text: Technical Data Sheet MBC13720/D Rev. 1, 01/2002 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Scale 2:1 Package Information Plastic Package Case 419B (SOT-363) Ordering Information Device Device Marking Package MBC13720T1 20 SOT-363 The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz
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MBC13720/D
MBC13720
OT-363)
MBC13720T1
OT-363
MBC13720
OT-363
marking 47 gain block sot-363
S1239
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MBC13720
Abstract: MBC13720T1 low noise amplifier 0947
Text: Freescale Semiconductor, Inc. Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking
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MBC13720/D
MBC13720
OT-363)
MBC13720T1
OT-363
MBC13720
MBC13720T1
low noise amplifier 0947
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BAS16S
Abstract: VPS05604 4C3 diode
Text: BAS16S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2
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BAS16S
OT-363
VPS05604
EHA07193
EHA07291
OT363
Jul-06-2001
EHB00025
BAS16S
VPS05604
4C3 diode
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PDF
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VPS05604
Abstract: No abstract text available
Text: BAS 16S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2
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OT-363
VPS05604
EHA07193
EHA07291
OT-363
Aug-09-1999
EHB00025
EHB00022
VPS05604
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PDF
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BAV70S
Abstract: Q62702-A1097 5a2 DIODE
Text: BAV 70S Silicon Switching Diode Array • For high speed switching applications • Common cathode • Internal galvanic isolated Diodes Arrays in one package Type Marking Ordering Code Pin Configuration BAV 70S A4s 1/4=A1 Q62702-A1097 2/5=A2 Package 3/6=C1/2 SOT-363
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Q62702-A1097
OT-363
Nov-28-1996
BAV70S
Q62702-A1097
5a2 DIODE
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BAW56S
Abstract: Q62702-A1253 VPS05604
Text: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Common anode 6 • Internal galvanic isolated Diodes in one package 2 1 3 VPS05604 Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 2/5 = C2 3/6 = A1/2 SOT-363
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VPS05604
OT-363
Q62702-A1253
Sep-07-1998
EHB00093
EHB00090
BAW56S
Q62702-A1253
VPS05604
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PDF
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a1277
Abstract: Q62702-A1277 VPS05604 A7s marking diode A7S marking code 855i
Text: BAV 99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Connected in series 6 • Internal galvanic isolated Diodes in one package 2 1 3 VPS05604 Type Marking Ordering Code Pin Configuration BAV 99S A7s 1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363
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VPS05604
OT-363
Q62702-A1277
Apr-27-1998
EHB00078
EHB00075
a1277
Q62702-A1277
VPS05604
A7s marking diode
A7S marking code
855i
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transistor a1241
Abstract: A1241 transistor a1241 datasheet Q62702-A1241 VPS05604 5-30K
Text: BAS 16S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Internal galvanic isolated Diodes 6 in one package Tape loading orientation 2 1 Type Marking Ordering Code Pin Configuration BAS 16S A6s 3 VPS05604 Package Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363
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VPS05604
Q62702-A1241
OT-363
Apr-24-1998
EHB00025
EHB00022
transistor a1241
A1241
transistor a1241 datasheet
VPS05604
5-30K
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marking 7A
Abstract: sot-363 MARKING MUN5237DW1T1
Text: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5211DW1T1
r14525
MUN5211DW1T1/D
marking 7A
sot-363 MARKING
MUN5237DW1T1
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MUN5211DW1T1
Abstract: MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5237DW1T1
Text: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5211DW1T1
r14525
MUN5211DW1T1/D
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5237DW1T1
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34 sot-363
Abstract: MUN5136DW1T1
Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5111DW1T1
r14525
MUN5111DW1T1/D
34 sot-363
MUN5136DW1T1
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PDF
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MUN5111DW1T1
Abstract: MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5136DW1T1
Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5111DW1T1
r14525
MUN5111DW1T1/D
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5136DW1T1
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PDF
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MUN5331DW1T1
Abstract: No abstract text available
Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5311DW1T1
r14525
MUN5311DW1T1/D
MUN5331DW1T1
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PDF
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420 sot-363
Abstract: SOT363 footprint marking code 12 SOT-363 amplifier marking code 04 sot-363 SOT363 MARKING 3B BC857 SOT363 BC557 bc556 information of BC557 3f L series surface mount transistor BC858CDW1T1
Text: BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices http://onsemi.com Dual General Purpose Transistors 3 PNP Duals (2) (1) Q1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is
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BC856BDW1T1,
BC857BDW1T1,
BC857CDW1T1,
BC858BDW1T1,
BC858CDW1T1
OT-363/SC-88
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
420 sot-363
SOT363 footprint
marking code 12 SOT-363 amplifier
marking code 04 sot-363
SOT363 MARKING 3B
BC857 SOT363
BC557 bc556
information of BC557
3f L series surface mount transistor
BC858CDW1T1
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BC557 transistor
Abstract: MARKING 3F TRANSISTOR BC858CDW1T1
Text: BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices Dual General Purpose http://onsemi.com Transistors PNP Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is
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BC857BDW1T1,
BC857CDW1T1,
BC858BDW1T1,
BC858CDW1T1
363/SC
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC857
BC557 transistor
MARKING 3F TRANSISTOR
BC858CDW1T1
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PDF
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BC858CDW1T1
Abstract: No abstract text available
Text: BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices Dual General Purpose http://onsemi.com Transistors PNP Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is
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BC857BDW1T1,
BC857CDW1T1,
BC858BDW1T1,
BC858CDW1T1
363/SC
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC857
BC858CDW1T1
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PDF
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BC848BDW
Abstract: No abstract text available
Text: BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 http://onsemi.com Dual General Purpose Transistors 3 NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
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BC846BDW1T1,
BC847BDW1T1,
BC847CDW1T1,
BC848BDW1T1,
BC848CDW1T1
363/SC
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848BDW
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PDF
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bc557
Abstract: BC847 SOT363 marking 12 SOT-363 amplifier
Text: BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 Dual General Purpose Transistors http://onsemi.com NPN Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.
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Original
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BC847BDW1T1,
BC847CDW1T1,
BC848BDW1T1,
BC848CDW1T1
OT-363/SC-88
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
BC847
bc557
BC847 SOT363
marking 12 SOT-363 amplifier
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PDF
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BC858CDW1T1
Abstract: BC856 BC856BDW1T1 BC857 BC857BDW1T1 BC857CDW1T1 BC858 BC858BDW1T1 operation of BC557 TRANSISTOR
Text: BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is
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Original
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BC856BDW1T1,
BC857BDW1T1
BC858BDW1T1
363/SC
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
BC856
BC858CDW1T1
BC856
BC856BDW1T1
BC857
BC857CDW1T1
BC858
operation of BC557 TRANSISTOR
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PDF
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3F SOT3
Abstract: bc557 3f series surface mount transistor BC858CDW1T1
Text: BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices http://onsemi.com Dual General Purpose Transistors 3 PNP Duals (2) (1) Q1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is
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Original
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BC856BDW1T1,
BC857BDW1T1,
BC857CDW1T1,
BC858BDW1T1,
BC858CDW1T1
363/SC
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
3F SOT3
bc557
3f series surface mount transistor
BC858CDW1T1
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PDF
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bc557
Abstract: dual BC847
Text: BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 Dual General Purpose Transistors http://onsemi.com NPN Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
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Original
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BC847BDW1T1,
BC847CDW1T1,
BC848BDW1T1,
BC848CDW1T1
363/SC
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
BC847
bc557
dual BC847
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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OCR Scan
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
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PDF
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TFK 715
Abstract: BAW56S
Text: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363
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OCR Scan
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Q62702-A1253
OT-363
100ns,
TFK 715
BAW56S
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PDF
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