ATF-13136-TR1
Abstract: transistor tag 306 MARK A1 SOT-143 sot-23 6121 ATF13136-TR1 Amplifier Micro-X "marking code" D
Text: Tape and Reel Packaging for Semiconductor Devices Package Outlines 05, 08A, 36, 76, 84, 86, MSOP-3, SOIC-8, SOT-23, SOT-143, SOT-323, SOT-343, SOT-363, SSOP-16, TQFP-32, and TQFP-48 Technical Data Description Related Standard This data sheet is intended to
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OT-23,
OT-143,
OT-323,
OT-343,
OT-363,
SSOP-16,
TQFP-32,
TQFP-48
RS481,
OT-143
ATF-13136-TR1
transistor tag 306
MARK A1 SOT-143
sot-23 6121
ATF13136-TR1
Amplifier Micro-X "marking code" D
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ATF-13136-TR1
Abstract: ATF13136 atf-13136 HPMX-5001 SSOP-16 TQFP-48 On semiconductor date Code sot-143 micro-x marking code E1 transistor tag 306
Text: Tape and Reel Packaging for Semiconductor Devices Package Outlines 05, 08A, 36, 76, 84, 86, MSOP-3, SOIC-8, SOT-23, SOT-143, SOT-323, SOT-363, SSOP-16, TQFP-32, and TQFP-48 Technical Data Description Related Standard This data sheet is intended to cover standards on tape and reel
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OT-23,
OT-143,
OT-323,
OT-363,
SSOP-16,
TQFP-32,
TQFP-48
RS481,
OT-143
ATF-13136-TR1
ATF-13136-TR1
ATF13136
atf-13136
HPMX-5001
SSOP-16
TQFP-48
On semiconductor date Code sot-143
micro-x marking code E1
transistor tag 306
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BULT118
Abstract: BULK118
Text: BULK118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BULK118 IS REVERSE PINS OUT Vs STANDARD SOT-82 PACKAGE AND SAME PINS OUT Vs BULT118 SOT-32 PACKAGE STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BULK118
BULK118
OT-82
BULT118
OT-32
OT-82
BULT118
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SO930
Abstract: SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40
Text: TRANSISTORS SMALL SIGNAL TO-18 TO-39 TO-72 SOT-223 TO-126/SOT-32 SOT-23 TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Max rating Polarity VCEO V NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 15 12 15 25 25 25 25 20 30 15 15 20 30 20 IC Type Ptot
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O-126/SOT-32
OT-223
OT-23
2N2857
2N5179
BFX89
BFR99A
BFR99
BFW16A
BFW17A
SO930
SO918
BSX28
BCW67B SOT-223
SO5400
low noise transistors vhf
So642
2n2222a SOT223
BCY70
bfx40
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Untitled
Abstract: No abstract text available
Text: BD227 BD229 BD231 J K . SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, BD228 and BD230.
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BD227
BD229
BD231
OT-32
BD226,
BD228
BD230.
BD227
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H7545
Abstract: TR BC 817-25 BCV72 BCW31 BCW32 BCX20 BSS64 SOA05 70G45 B 250 C 100 K4
Text: a 7 SCS-THOMSON M DÊKOltLiÊTnSOlifflDËi SURFACE MOUNT DEVICES GENERAL PURPOSE & INDUSTRIAL SOT 23 SOT 23 NPN GENERAL PURPOSE TRANSISTORS v CEO •c ptot hpE @ *C UJ VCBO >o Type V (mA) 50* 50* 50* 30* 30* 30* 80 80 50 50 50 30 30 30 30 30 50 50 32 60
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BCX20
BSS64
SOA05
SQA06
H7545
TR BC 817-25
BCV72
BCW31
BCW32
70G45
B 250 C 100 K4
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Transistors bd 133
Abstract: C 1972 transistor transistor IC BT 136 BD229 BD231 transistor IC BT 134 BD227 BD226 BD230 TRANSISTOR BD 137
Text: BD227 BD229 BD231 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, 8D228 and BD230. QUICK REFERENCE DATA
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BD227
BD229
BD231
OT-32
BD226,
8D228
BD230.
BD229
Transistors bd 133
C 1972 transistor
transistor IC BT 136
BD231
transistor IC BT 134
BD226
BD230
TRANSISTOR BD 137
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Transistor 834
Abstract: MJE210 TRANSISTOR B 834
Text: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.
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MJE210
MJE210
OT-32
OT-32
Transistor 834
TRANSISTOR B 834
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MJE3440
Abstract: sot-32 bs
Text: MJE3440 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR • ■ DESCRIPTION The MJE3440 is a NPN silicon Epitaxial Planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications.
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MJE3440
MJE3440
OT-32
OT-32
sot-32 bs
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ST1803DFP
Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
Text: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D
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OT-32
O-126
BD433
BD435
MJE521
BD135
BD437
BD235
BD439
2N5191
ST1803DFP
BUX98PI
BU808DFI equivalent
BUV48FI
electronic balast
ST1803DHI equivalent
st2001hi
SOT93 package
BUX48A
ST2310HI equivalent
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Untitled
Abstract: No abstract text available
Text: : S v m Se m i : 5YM5EMI SEMICONDUCTOR BCW61B SOT -23 Plastic Encapsulate Transistors TRANSISTOR PNP FEATURES Power dissipation PCM : 0.25 Collector current Icm : W -0.2 (Tamb=25 °C) A Collector base voltage V ( b r )cbo : ~32 V Operating and storage junction temperature range
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BCW61B
OT-23
950TPY
550REF
037TPY
022REF
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2N5657
Abstract: No abstract text available
Text: 2N5657 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR • ■ DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays.
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2N5657
2N5657
OT-32
OT-32
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LTACQ
Abstract: LTC6910-2 LTC6910-1 LTC6910-3 LTC6910-2CTS8 sot-23 marking code 352
Text: Final Electrical Specifications LTC6910-2 Digitally Controlled Programmable Gain Amplifier in SOT-23 April 2003 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 3-Bit Digital Gain Control 0, 1, 2, 4, 8, 16, 32 and 64V/V 8-Pin TSOT-23 Package
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LTC6910-2
OT-23
TSOT-23
13MHz
120dB
LTC6910-2
LT1251/LT1256
40MHz
LTC1564
LTACQ
LTC6910-1
LTC6910-3
LTC6910-2CTS8
sot-23 marking code 352
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LTC6910-2
Abstract: LTC6910-1 LTC6910-3 LTACQ Automatic Gain Control LTC6910-2CTS8
Text: Final Electrical Specifications LTC6910-2 Digitally Controlled Programmable Gain Amplifier in SOT-23 March 2003 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 3-Bit Digital Gain Control 0, 1, 2, 4, 8, 16, 32 and 64V/V 8-Pin TSOT-23 Package
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LTC6910-2
OT-23
TSOT-23
13MHz
13nV/Hz
120dB
LTC6910-2
LT1251/LT1256
40MHz
LTC6910-1
LTC6910-3
LTACQ
Automatic Gain Control
LTC6910-2CTS8
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34063
Abstract: led driver circuit 34063 34063 application note 34063 application INA-34063 34063 schematic led driver 34063 marking 34 sot-363 rf 18 sot-363 rf power amplifier a006
Text: 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm P1 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications
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INA-34063
OT-363
SC-70)
INA-34063
5967-5768E
34063
led driver circuit 34063
34063 application note
34063 application
34063 schematic
led driver 34063
marking 34 sot-363 rf
18 sot-363 rf power amplifier
a006
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34063
Abstract: 34063 application note 34063 schematic 34063 Application Notes marking 34063 INA-34063 34063 circuit table
Text: 3.0 GHz Medium Power Silicon RFIC␣ Amplifier Technical Data INA-34063 Features • +8 dBm P1 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9␣ GHz • Single +3V Supply • Unconditionally Stable
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INA-34063
OT-363
SC-70)
INA-34063
OT-363
OT-143
5967-5768E
34063
34063 application note
34063 schematic
34063 Application Notes
marking 34063
34063 circuit table
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ex 34063
Abstract: 34063 schematic 34063 application note
Text: W hot HEWLETT mLEM PACKARD 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm Pj ¿3 at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply
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INA-34063
OT-363
SC-70)
INA-34063
OT-363
OT-143
5967-5768E
ex 34063
34063 schematic
34063 application note
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34063 schematic
Abstract: 34063 application note 34063 34063 application led driver circuit 34063 a006 ex 34063 led driver 34063 rfics marking 76 ANA004R
Text: 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm P1 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications
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INA-34063
OT-363
SC-70)
INA-34063
5967-5768E
34063 schematic
34063 application note
34063
34063 application
led driver circuit 34063
a006
ex 34063
led driver 34063
rfics marking 76
ANA004R
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Untitled
Abstract: No abstract text available
Text: TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 24 @ VGS = 4.5V 3 32 @ VGS = 2.5V 3 37 @ VGS = 2.0V 3 Block Diagram ● Advance Trench Process Technology
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TSM1412
OT-363
TSM1412CU6
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Untitled
Abstract: No abstract text available
Text: BF457 to BF459 J v _ SILICON PLANAR TRANSISTORS fo r vid e o o u tp u t stages N-P-N transistors in a SOT-32 plastic package intended for video output stages in black-and-white and in colour television receivers. Q UICK R E F E R E N C E DATA
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BF457
BF459
OT-32
BF458
BF459
OT-32)
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B 1403 N
Abstract: No abstract text available
Text: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol
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MMBD1401
OT-23
B 1403 N
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1403
Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.
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MMBD1401
OT-23
MMBD1404
UMBD1403
MMBD1405
b50113D
1403
R20 marking
M3325
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transistor BD 378
Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
Text: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.
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BD136
BD138
BD140
OT-32
BD140
transistor BD 378
BD140 pnp transistor
transistors bd136
bd136 N
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BD226
Abstract: T-33-07 C 1972 transistor BD227 BD228 BD230 BD229 BD231 3307 jnib
Text: _ PHILI P S I N T E R N A T I O N A L BD226 BD228 BD230 J m SbE ]> 711DflEti 004EA314 ^37 • P H I N SILICON PLANAR EPITAXIAL POWER TRANSISTORS T~ 3 3 - 0 7 G en eral purpose n -p-n tra n sisto r s in a SOT-32 p lastic envelope esp ecially recom m ended
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BD226
BD228
BD230
T-33-07
OT-32
BD227,
BD229
BD231.
C 1972 transistor
BD227
BD231
3307
jnib
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