MC4044P
Abstract: 7660CPA MC14411P 8038ccpd RC4151N ultrasonic proximity detector LM35CZ ICL7660SCPA 344C mc145151p
Text: Linear, Sensors & Digital Pots TO-5/TO-52 TO-92 TO-220 TO-252 TO-263 DD DIP Call us to see if you can save 10-20%. SOIC & SOP SOT-23 SOT-223 Manufacturer Cross Reference Table Manufacturer Analog Devices Anachip Code Manufacturer Code Manufacturer ADI Fairchild Semiconductor FSC Maxim Corporation
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O-5/TO-52
O-220
O-252
O-263
OT-23
OT-223
302252CB
302228CB
25275CB
29372CB
MC4044P
7660CPA
MC14411P
8038ccpd
RC4151N
ultrasonic proximity detector
LM35CZ
ICL7660SCPA
344C
mc145151p
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE TO-252 SOT-89 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.
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UT06P03
O-252
OT-89
UT06P03
OT-26
UT06P03G-AB3-R
UT06P03G-AG6-R
UT06P03L-TN3-R
UT06P03G-TN3-R
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B08 REGULATOR
Abstract: voltage regulator sot 223 18BSC TS39100 transistor npn 12V 1A Collector Current
Text: TS39100 1A Ultra Low Dropout Voltage Regulator SOT-223 TO-252 DPAK Pin Definition: 1. Input 2. Ground (tab) 3. Output General Description The TS39100 are 1A ultra low dropout linear voltage regulators that provide low voltage, high current output from an
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TS39100
OT-223
O-252
TS39100
400mV
B08 REGULATOR
voltage regulator sot 223
18BSC
transistor npn 12V 1A Collector Current
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2SD965
Abstract: 2SD965AL 2sd965l 2sd965 transistor 2SD965A
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR 1 SOT-89 FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V 1 TO-252
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2SD965/A
OT-89
2SD965:
2SD965A:
O-252
2SD965L/2SD965AL
2SD965-x-AB3-R
2SD965L-x-AB3-R
2SD965-x-T92-B
2SD965L-x-T92-B
2SD965
2SD965AL
2sd965l
2sd965 transistor
2SD965A
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TRANSISTOR MPS-A44
Abstract: transistor 400V sot MPSA44
Text: UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 1 FEATURES TO-252 SOT-89 * Collector-Emitter Voltage: * VCEO=400V UTC MPSA44 * VCEO=350V (UTC MPSA45) * Collector Current up to 300mA 1 1 TO-92 TO-92NL 1 TO-126
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MPSA44/45
O-252
OT-89
MPSA44)
MPSA45)
300mA
O-92NL
O-126
MPSA44G-AB3-R
TRANSISTOR MPS-A44
transistor 400V sot
MPSA44
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TS39100
Abstract: TS39104CS SOP8 PNP Transistor Package 2525l
Text: TS39100/1/2/3/4/5 1A Ultra Low Dropout Voltage Regulator with Multi-Function SOT-223 TO-252 DPAK Pin Definition: TS39100CWxx 1. Input 2. Ground (tab) 3. Output Pin Definition: TS39100CPxx 1. Input 2. Ground (tab) 3. Output SOP-8 Pin Definition: TS39101CSxx
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TS39100/1/2/3/4/5
OT-223
O-252
TS39100CWxx
TS39100CPxx
TS39101CSxx
TS39102CS
O-252-5L
TS39104CS
TS39103CP5xx
TS39100
TS39104CS
SOP8 PNP Transistor Package
2525l
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2SB1132
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES 1 * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) TO-252 *Pb-free plating product number: 2SB1132L
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2SB1132
OT-89
2SB1132
-500mA/-50mA)
O-252
2SB1132L
2SB1132-x-AB3-R
2SB1132L-x-AB3-R
2SB1132-x-TN3-R
2SB1132L-x-TN3-R
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APM3054N
Abstract: 0118-B transistor apm3054n equivalent J-STD-020A marking 8A* sot-223 m3054n
Text: APM3054N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/15A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Package 1
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APM3054N
0V/15A,
O-252
OT-223
O-252
OT-223
OT-89
APM3054N
0118-B
transistor apm3054n equivalent
J-STD-020A
marking 8A* sot-223
m3054n
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APM3055L
Abstract: 3055L APM3055L voltage APM3055L equivalent APM3055L datasheet J-STD-020A marking 3055l f 3055l A6 sot223
Text: APM3055L N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =100mΩ(max) @ VGS=10V RDS(ON)=200mΩ(max) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages
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APM3055L
0V/12A,
O-252
OT-223
O-252
OT-223
3055L
APM3055L
3055L
APM3055L voltage
APM3055L equivalent
APM3055L datasheet
J-STD-020A
marking 3055l
f 3055l
A6 sot223
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PJ1386
Abstract: PJB1386 PJB1386CY
Text: PJB1386 PNP Epitaxial Silicon Transistor T he PJ1386 is an epitaxial planar type PNP silicon transistor SOT-89 TO-252 FATURES z Excellent DC current gain characteristics z Low VCE sat VCE(sat) = -0.35V (Typ) (IC/IB = -4A/-0.1A) Pin: 1.Base ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ )
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PJB1386
PJ1386
O-252
OT-89
O-252
OT-89
PJB1386CY
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3a npn to126 transistor
Abstract: 2sd1060l 2SD1060
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR 1 SOT-89 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A 1 TO-126 1 TO-92 1 TO-220 1 1 TO-252 TO-251 *Pb-free plating product number: 2SD1060L
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2SD1060
OT-89
O-126
O-220
O-252
O-251
2SD1060L
2SD1060-x-AB3-R
2SD1060L-x-AB3-R
2SD1060-x-T60-K
3a npn to126 transistor
2sd1060l
2SD1060
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3023n
Abstract: APM3023N A102 J-STD-020A M3023 TO-252-E
Text: APM3023N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages
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APM3023N
0V/30A,
O-252
O-220
OT-223
OT-223
O-252
3023n
APM3023N
A102
J-STD-020A
M3023
TO-252-E
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voltage regulator sot 223
Abstract: No abstract text available
Text: TS39100 1A Ultra Low Dropout Voltage Regulator SOT-223 TO-252 DPAK Pin Definition: 1. Input 2. Ground (tab) 3. Output General Description The TS39100 are 1A ultra low dropout linear voltage regulators that provide low voltage, high current output from an extremely small package. This regulator offers extremely low dropout (typically 400mV at 1A) and very low
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TS39100
OT-223
O-252
TS39100
400mV
voltage regulator sot 223
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM
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LN2302LT1G
236AB)
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
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LP4101LT1G
Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance
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LP4101LT1G
236AB)
3000/Tape
LP4101LT3G
000/Tape
195mm
150mm
3000PCS/Reel
LP4101LT1G
P41 sot-23
mark 642 sot 363
MARKING d1 sot-723
SC-75
SOT-353 MARKING 8v
sot-23 single diode mark PD
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LP2301LT1G
Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance
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LP2301LT1G
236AB)
3000/Tape
LP2301LT3G
000/Tape
195mm
150mm
3000PCS/Reel
LP2301LT1G
SC-75
SOT-353 MARKING 8v
619 SOT 23
sot-23 single diode mark PD
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ln2312
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance
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LN2312LT1G
236AB)
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
ln2312
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LN2312LT1G
Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance
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LN2312LT1G
236AB)
3000/Tape
LN2312LT3G
10000/Tape
195mm
150mm
3000PCS/Reel
LN2312LT1G
LN2312LT3G
mark 642 sot 363
SC-75
SOT-353 MARKING 8v
SOT-353 vg
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ahr 49 transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB
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L2SB1197KXLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
ahr 49 transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor *32V, *0.5A L2SA1036K*LT1G L2SA1036KPLT1G FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. L2SA1036KQLT1G L2SA1036KRLT1G The G.Suffix Denotes a Pb-Free Lead Finish
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L2SA1036K
L2SA1036KPLT1G
500mA
L2SA1036KQLT1G
L2SA1036KRLT1G
L2SA1036KPLT1G
L2SA1036KQLT1G
OT-23
L2SA1036KRLT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)
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LRB551V-30T1GG
LRB551V-30T1G
3000/Tape
LRB551V-30T3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE
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LMBV3401LT1G
20Vdc
100MHzâ
34Ohms
10mAdc
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High –Speed Switching Diode LMDL914T1G LMDL914T1G Featrues 1 Pb-Free Package is available. ORDERING INFORMATION 2 Device Package Shipping LMDL914T1G SOD-323 3000/Tape&Reel LMDL914T3G SOD-323 10000/Tape&Reel SOD- 323 1 CATHODE MAXIMUM RATINGS
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LMDL914T1G
OD-323
3000/Tape
LMDL914T3G
10000/Tape
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T410
Abstract: T435 Triac T435
Text: SGS-THOMSON ’0 ^ M iM T41o 0 g S T 4 3 5 HIGH PERFORMANCE TRIACS FEATURES • ITRMS = 4 A ■ V drm = 400 V to 800 V ■ SENSITIVE GATE : lGT s 10 mA ■ HIGH COMMUTATION : (dl/dt c > 3.5 A/ms DESCRIPTION The T410 / T435 high voltage TRIAC Families are high performance planar diffused PNPN de
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ISOWATT220
194/SOT
T0220AB
T0220AB
BTA06-XXX
BTB06-XXX
T410
T435
Triac T435
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