SOT-25 RF DETECT Search Results

equivalent components of diode ak 03

Contextual Info: Surface Mount RF Schottky Detector Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMS-285L/P HSMS-286L/P/R Features • Surface Mount SOT-363 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz

MMBF4416

Abstract: FAIRCHILD SOT-23 MARK 30 RF Amplifiers rf fairchild transistor 100mhz rf fairchild transistor 100mhz amplifier
Contextual Info: MMBF4416 N-Channel RF Amplifiers • This device is designed for RF amplifiers. • Sourced from process 50. G S SOT-23 D Mark: 6A Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage

Contextual Info: W hü1 H E W L E T T mLttM P A C K A R D Surface Mount RF Schottky Detector Diodes in SOT-363 SC-70, 6 Lead Technical Data Features • Surface Mount SOT-363 Package • High Detection Sensitivity: Up to 50 mV/nW at 915 MHz Up to 35 mV/nW at 2.45 GHz Up to 25 mV/nW at 5.80 GHz

UPC2757T

Abstract: UPC2757TB UPC2757TB-E3-A UPC2758TB UPC2758TB-E3-A
Contextual Info: 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES UPC2757TB UPC2758TB CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package VCC = 3 V, LO Power = -5 dBm RF Above LO 200 MHz IF Conversion Gain dB • WIDEBAND OPERATION:

150J10

Abstract: 7011 NPN TRANSISTOR
Contextual Info: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm

MJE 15024

Abstract: BF111 NE662M04 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884
Contextual Info: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm

UPC2749T

Abstract: UPC2749TB UPC2749TB-E3-A
Contextual Info: 3 V, SUPER MINIMOLD UPC2749TB 1900 MHz SI RFIC AMPLIFIER FEATURES GAIN vs. FREQUENCY AND TEMPERATURE • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 25 VCC = 3.0 V • GAIN: 16 dB TYP 20 • NOISE FIGURE: 4.0 dB TYP DESCRIPTION NEC's UPC2749TB is a Silicon RF Integrated Circuit which is

DD01-73

Abstract: DC16-73 DD01 sot-6
Contextual Info: Preliminary Directional Detector DD01-73 Features • Low Cost SO T-6 ■ Low Profile SOT -6 ■ Small SOT-6 Package ■ Tape & Reel SOT -6 -6 SOT Description The DD01-73 is a 50 Ω, directional coupler/Schottky diode combination. The integrated directional coupler is

marking 34 sot-363 rf

Abstract: HSMS-286x Series Detector Schottky Diodes at 915MHZ sot-23 MARKING CODE ZZ AVAGO DATE CODE MARKING sot 23 marking code T2 SOT 363 marking CODE T4 T4 marking sot-323 286E HSMS-2865
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-2865 HSMS-2865 High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

surface mount limiter diodes

Abstract: marking 34 sot-363 rf HSMS-286F HSMS-286K HSMS-286P 286E HSMS-286B date code A DIODE MARKING CODE T4 marking code tc sot 363 MARKING T2 SOT323
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286P HSMS-286P High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

DIODE MARKING CODE A1

Abstract: RFID 5.8Ghz HSMS286F marking code e1 DIODE 286E HSMS-286F HSMS-286K package marking AVAGO DATE CODE MARKING sc70-3 PCB PAD
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286F HSMS-286F High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

5rd marking

Contextual Info: NSR15ADXV6T1, NSR15ADXV6T5 Dual RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. http://onsemi.com Features • • • • Low Capacitance <1.0 pF Low VF (390 mV Typical @ 1.0 mA)

SOT-563 rf power detection

Abstract: NSR15ADXV6T1 NSR15ADXV6T5 vfd B DELTA 5rd marking
Contextual Info: NSR15ADXV6T1, NSR15ADXV6T5 Dual RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. http://onsemi.com Features • • • • Low Capacitance <1.0 pF Low VF (390 mV Typical @ 1.0 mA)

marking 301 sot-23

Abstract: 301 marking code sot-23 MBD301G MMBD301LT1G marking 4T sot-23 MBD301 MMBD301 MMBD301LT1 MMBD301LT3 MMBD301LT3G
Contextual Info: MBD301, MMBD301LT1 Preferred Device Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

Contextual Info: ON Semiconductort Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

Contextual Info: ON Semiconductort MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other

709 SOT23

Abstract: marking 4T sot-23
Contextual Info: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other

4T SOT23

Contextual Info: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other

AV02-1377EN

Abstract: HSMS-285C HSMS-285X S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j
Contextual Info: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector ­diodes has been designed and optim­ized for use in small signal Pin <-20 dBm applications at ­frequencies below

Contextual Info: MBD701, MMBD701L, SMMBD701L Preferred Device Silicon Hot-Carrier Diodes Schottky Barrier Diodes http://onsemi.com These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

SMMBD701LT1G

Contextual Info: MBD701, MMBD701L, SMMBD701L Preferred Device Silicon Hot-Carrier Diodes Schottky Barrier Diodes http://onsemi.com These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

S11 SCHOTTKY diode

Abstract: zero bias diode AV02-1377EN HSMS-285x 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List
Contextual Info: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector ­diodes has been designed and optim­ized for use in small signal Pin <-20 dBm applications at ­frequencies below

MMBD452LT1

Contextual Info: ON Semiconductort Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

MMBD452LT1

Contextual Info: MOTOROLA Order this document by MMBD452LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital