CS3121
Abstract: No abstract text available
Text: CS3121 Revision History Rev. No. History Issue Date 1.0 New issue Sep. 10,2012 Add Current Limit=300mA Min. Delete TSOT-23-6 Package 1.1 Add TDFN-6 and SOT-23-6 Package May. 13,2013 Modify Ordering information and Marking information Add ESD Rating
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CS3121
300mA
TSOT-23-6
OT-23-6
CS3121
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TP0610K-T1-E3
Abstract: No abstract text available
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K
2002/95/EC
18-Jul-08
TP0610K-T1-E3
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MAX810
Abstract: No abstract text available
Text: MOTOROLA Order Number: MAX809/D Rev. 0, 06/1999 Semiconductor Components MAX809 MAX810 SOT–23 PLASTIC PACKAGE TO–236 CASE 318–08 Product Preview ORDERING INFORMATION 3-Pin Microprocessor Reset Monitors MAX809x SOT–23 MAX810x SOT–23 NOTE: The ”x” denotes a suffix for VCC
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MAX809/D
MAX809
MAX810
MAX809x
MAX810x
140msec
MAX809)
MAX810
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order Number: MAX809/D Rev. 1, 07/1999 Semiconductor Components MAX809 MAX810 SOT–23 PLASTIC PACKAGE TO–236 CASE 318 3-Pin Microprocessor Reset Monitors ORDERING INFORMATION MAX809xTR SOT–23 MAX810xTR SOT–23 NOTE: The ”x” denotes a suffix for VCC
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MAX809/D
MAX809
MAX810
MAX809xTR
MAX810xTR
140msec
MAX809)
63erature
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Untitled
Abstract: No abstract text available
Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • S and NSV Prefix for Automotive and Other Applications Requiring
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BCX17LT1G,
BCX18LT1G,
BCX19LT1G,
SBCX19LT1G,
BCX17,
BCX19
BCX18
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Untitled
Abstract: No abstract text available
Text: MMBD6100LT1 Monolithic Dual Switching Diode http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Rating Value Unit VR Reverse Voltage 70 Vdc IF Forward Current 200 mAdc Peak Forward Surge Current 500 mAdc IFM(surge) 3 1 2 PLASTIC SOT−23S CASE 318 THERMAL CHARACTERISTICS
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MMBD6100LT1
OT-23S
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SBCX19LT1G
Abstract: SBCX19
Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
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Original
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BCX17LT1G,
BCX18LT1G,
BCX19LT1G,
SBCX19LT1G,
AEC-Q101
OT-23
O-236)
BCX17,
BCX19
BCX18
SBCX19LT1G
SBCX19
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Untitled
Abstract: No abstract text available
Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
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Original
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BCX17LT1G,
BCX18LT1G,
BCX19LT1G,
SBCX19LT1G,
BCX17,
BCX19
BCX18
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PDF
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m6g marking code
Abstract: m6g transistors marking code m6g marking sot23
Text: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique SOT−23 CASE 318 STYLE 10
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MMBF4391LT1G,
SMMBF4391LT1G,
MMBF4392LT1G,
MMBF4393LT1G
AEC-Q101
OT-23
MMBF4391LT1/D
m6g marking code
m6g transistors marking code
m6g marking sot23
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5bm Marking
Abstract: MMBD6100LT1 MMBD6100LT3
Text: MMBD6100LT1 Monolithic Dual Switching Diode http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Rating Value Unit VR Reverse Voltage 70 Vdc IF Forward Current 200 mAdc Peak Forward Surge Current 500 mAdc IFM(surge) 3 1 2 PLASTIC SOT–23S CASE 318 THERMAL CHARACTERISTICS
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MMBD6100LT1
r14525
MMBD6100LT1/D
5bm Marking
MMBD6100LT1
MMBD6100LT3
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PDF
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BSV52LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BSV52LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage
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BSV52LT1/D
BSV52LT1
236AB)
BSV52LT1/D*
BSV52LT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
236AB)
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ic 556
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB
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BCX17LT1
BCX18LT1
BCX19LT1
BCX20LT1
236AB)
BCX20LT1
BCX17LT1
ic 556
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon BCW68GLT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc
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BCW68GLT1
236AB)
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6u sot-23
Abstract: JFET with Yos s22 sot-23
Text: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N−Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB
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MMBFJ309LT1
MMBFJ310LT1
236AB)
MMBFJ309LT1
6u sot-23
JFET with Yos
s22 sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping 1 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB MAXIMUM RATINGS
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LBAL99LT1G
3000/Tape
LBAL99LT3G
10000/Tape
236AB)
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PDF
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BCW68GLT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BCW68GLT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon BCW68GLT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB Symbol Value Unit Collector–Emitter Voltage
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BCW68GLT1/D
BCW68GLT1
236AB)
BCW68GLT1/D*
BCW68GLT1
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PDF
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P−Channel 3 MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB
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MMBF5460LT1
236AB)
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon LMBT918LT1G z Pb-Free Package is Available. Ordering Information Device Marking Shipping LMBT918LT1G M3B 3000/Tape&Reel LMBT918LT3G M3B 10000/Tape&Reel 3 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS
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LMBT918LT1G
3000/Tape
LMBT918LT3G
10000/Tape
236AB)
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LBSS63LT1G PNP Silicon 3 COLLECTOR 3 1 1 BASE 2 2 Featrues CASE 318–08, STYLE 6 SOT– 23 TO–236AB EMITTER Pb-Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Collector– Emitter Voltage
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LBSS63LT1G
236AB)
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SOT23s
Abstract: SOT23-s MMBD6100LT1 MMBD6100LT3
Text: MMBD6100LT1 Monolithic Dual Switching Diode http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Rating Value Unit VR Reverse Voltage 70 Vdc IF Forward Current 200 mAdc Peak Forward Surge Current 500 mAdc IFM(surge) 3 1 2 PLASTIC SOT–23S CASE 318 THERMAL CHARACTERISTICS
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Original
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MMBD6100LT1
r14525
MMBD6100LT1/D
SOT23s
SOT23-s
MMBD6100LT1
MMBD6100LT3
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PDF
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BF993
Abstract: 1S marking transistor transistor bc 132
Text: TELEFUNKEN ELECTRONIC A1C D ¥i Li(FyMKIKl electronic Creative Technologies • AT20{nb 0005577 BF 993 Marked with: ME - T -31 -=25 N-Channel Dual Gate MOS*Fieldeffect Tetrode •Depletion Mode Applications: Input- and Mlxerstages especially for FM- and VHF TV-tuners up to 300 MHz
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OCR Scan
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569-GS
BF993
1S marking transistor
transistor bc 132
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PDF
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J3005
Abstract: BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020
Text: ö le D TELEFUNKEN ELECTRONIC • a^soQ^b o o o s m 'W BF 311 TidtifpyKlKilMl electronic T - z t - t f Creative Tech nologïes Silicon NPN Epitaxial Planar RF Transistor I Applications; Video IF amplifier stages configuration, especially in video IF power stages
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OCR Scan
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569-GS
J3005
BF311
transistor BF 37
transistor marking ra
marking code YA Transistor
U16020
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PDF
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telefunken ta 350
Abstract: transistor BC 310 BF310 BC238C MOSFET sot-143 TO92 telefunken transistors Transistor A12 transistor AC 237 transistor bc 238 b
Text: TELEFUNKEN ELECTRONIC filC fi^ S O O ^ b D 0 0 0 5 1 0 ^ 5 • AL66 T ~ 3 f~ / y BF 310 TitUlFOMKIlIM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General up to 100 MHz In common base conflguratlon Features: • Small feedback capacltance
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OCR Scan
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ft-11
569-GS
000s154
hal66
if-11
telefunken ta 350
transistor BC 310
BF310
BC238C
MOSFET sot-143
TO92 telefunken transistors
Transistor A12
transistor AC 237
transistor bc 238 b
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PDF
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