Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT-23 TRANSISTOR BIPOLAR Search Results

    SOT-23 TRANSISTOR BIPOLAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    N0801S-T1-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, SOT-23F, / Visit Renesas Electronics Corporation
    N0201R-T1-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, SOT-23F, / Visit Renesas Electronics Corporation
    N0500S-T1-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, SOT-23F, / Visit Renesas Electronics Corporation

    SOT-23 TRANSISTOR BIPOLAR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mmbt3904lti

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT3906LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904LTI is Recommended * Epitaxial planar die construction SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic


    Original     		MMBT3906LT1 OT-23 MMBT3904LTI OT-23 MIL-STD-202E 125OC -55OC PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		MMBT3906 OT-23 MMBT3904 OT-23 MIL-STD-202E PDF

    125OC

    Abstract: MMBT3904 MMBT3906
    Text: MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		MMBT3906 OT-23 MMBT3904 OT-23 MIL-STD-202E 125OC MMBT3906 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807-16LT1 BC807-25LT1 BC807-40LT1 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Ideally suited for automatic insertion * Epitaxial planar die construction * Complementary NPN type available(BC817) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE


    Original     		BC807-16LT1 BC807-25LT1 BC807-40LT1 OT-23 BC817) OT-23 MIL-STD-202E PDF

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT2222ALT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Epitaxial planar die construction * Complementary PNP Type available(MMBT2907ALT1) SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		MMBT2222ALT1 OT-23 MMBT2907ALT1) OT-23 MIL-STD-202E PDF

    40LT16

    Abstract: No abstract text available
    Text: BC817-16LT1 BC817-25LT1 BC817-40LT1 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE


    Original     		BC817-16LT1 BC817-25LT1 BC817-40LT1 OT-23 OT-23 MIL-STD-202E 40LT16 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTA42 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * High breakdown voltage * Low collector-emitter saturation voltage * Complementary to MMBTA92 (NPN) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		MMBTA42 OT-23 MMBTA92 OT-23 MIL-STD-202E PDF

    125OC

    Abstract: MMBTA42 MMBTA92
    Text: MMBTA42 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * High breakdown voltage * Low collector-emitter saturation voltage * Complementary to MMBTA92 (NPN) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		MMBTA42 OT-23 MMBTA92 OT-23 MIL-STD-202E 125OC MMBTA42 MMBTA92 PDF

    200MHZ

    Abstract: 2SB709A
    Text: RECTRON 2SB709A SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		2SB709A OT-23 OT-23 MIL-STD-202E 200MHZ 2SB709A PDF

    100MHZ

    Abstract: BCW61B
    Text: RECTRON BCW61B SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation SOT-23 COLLECTOR MECHANICAL DATA * * * * * 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed


    Original     		BCW61B OT-23 OT-23 MIL-STD-202E 100MHZ BCW61B PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807-16 BC807-25 BC807-40 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Ideally suited for automatic insertion * Epitaxial planar die construction * Complementary NPN type available(BC817) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic


    Original     		BC807-16 BC807-25 BC807-40 OT-23 BC817) OT-23 MIL-STD-202E PDF

    100MHZ

    Abstract: BC817-16 BC817-25 BC817-40
    Text: BC817-16 BC817-25 BC817-40 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic


    Original     		BC817-16 BC817-25 BC817-40 OT-23 OT-23 MIL-STD-202E 100MHZ BC817-16 BC817-25 BC817-40 PDF

    2GM transistor

    Abstract: MMBTA56
    Text: MMBTA56 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W(Tamb=25OC) * Collector current ICM : -0.5 A * Collector-base voltage VCBO : -80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23


    Original     		MMBTA56 OT-23 -55OC 150OC OT-23 MIL-STD-202E 2GM transistor MMBTA56 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTA56 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W(Tamb=25OC) * Collector current ICM : -0.5 A * Collector-base voltage VCBO : -80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23


    Original     		MMBTA56 OT-23 -55OC 150OC OT-23 MIL-STD-202E PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTA13 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.3 A * Collector-base voltage V(BR)CBO: 30 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR


    Original     		MMBTA13 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 07different PDF

    100MHZ

    Abstract: 20MHZ BC807-40 BC817
    Text: BC807-40 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Ldeally suited for automatic insertion * Epitaxial planar die construction * Complementary NPN type available(BC817) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		BC807-40 OT-23 BC817) OT-23 MIL-STD-202E 100MHZ 20MHZ BC807-40 BC817 PDF

    C945

    Abstract: BR c945 transistor transistor npn c945 c945 transistor position of emitter of c945 NPN C945 C945 NPN transistor c945 C945 plastic C945 IC
    Text: C945 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : 0.15 * Collector-base voltage V(BR)CBO : 60 * Operating and storage junction TJ,Tstg: -55OC to +150OC W (Tamb=25OC) A V temperature range SOT-23


    Original     		OT-23 -55OC 150OC OT-23 MIL-STD-202E C945 BR c945 transistor transistor npn c945 c945 transistor position of emitter of c945 NPN C945 C945 NPN transistor c945 C945 plastic C945 IC PDF

    100MHZ

    Abstract: 20MHZ BC807-16 BC817
    Text: BC807-16 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Ldeally suited for automatic insertion * Epitaxial planar die construction * Complementary NPN type available(BC817) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		BC807-16 OT-23 BC817) OT-23 MIL-STD-202E 100MHZ 20MHZ BC807-16 BC817 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23


    Original     		MMBTA06 OT-23 -55OC 150OC OT-23 MIL-STD-202E PDF

    125OC

    Abstract: MMBT2907A
    Text: MMBT2907A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23


    Original     		MMBT2907A OT-23 -55OCto 150OC OT-23 MIL-STD-202E 125OC MMBT2907A PDF

    1GM sot-23

    Abstract: MMBTA06 1GM sot-23 transistor
    Text: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23


    Original     		MMBTA06 OT-23 -55OC 150OC OT-23 MIL-STD-202E 1GM sot-23 MMBTA06 1GM sot-23 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR


    Original     		MMBT3904 OT-23 -55OCto 150OC OT-23 MIL-STD-202E PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT2907A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23


    Original     		MMBT2907A OT-23 -55OCto 150OC OT-23 MIL-STD-202E PDF

    125OC

    Abstract: MMBT3904
    Text: MMBT3904 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR


    Original     		MMBT3904 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 125OC MMBT3904 PDF