SOT-23 MARKING CODE Y1 Search Results

SOT-23 MARKING CODE Y1 Result Highlights (5)

Part	Manufacturer	Description
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)

SOT-23 MARKING CODE Y1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
M8050 Abstract: No abstract text available Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11	Original	M8050 200mW OT-23 M8050-L 800mA, 30MHz 800mA M8050	PDF
M8050 Abstract: m8050 NPN equivalent M8050 equivalent Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11	Original	M8050 200mW OT-23 M8050-L M8050ation 800mA, 30MHz 25-Nov-2010 M8050 m8050 NPN equivalent M8050 equivalent	PDF
Y1 SOT-23 Abstract: KSD201 SDZ11V ksd2016 Text: SDZ11V Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ11V Marking Package Code Y1 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1	Original	SDZ11V OT-23 KSD-2016-000 Y1 SOT-23 KSD201 SDZ11V ksd2016	PDF
triode sot23 Abstract: bf999 Q62702-F1132 MARKING CODE DG SOT 23 Text: Silicon N Channel MOSFET Triode ● BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter Symbol	Original	Q62702-F1132 OT-23 triode sot23 bf999 Q62702-F1132 MARKING CODE DG SOT 23	PDF
V = Device Code Abstract: No abstract text available Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.	Original	MC74VHC1G02 353/SC V = Device Code	PDF
marking CODE W2D Abstract: marking w2d Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	MC74VHC1G126 353/SC marking CODE W2D marking w2d	PDF
V = Device Code Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS	Original	MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D	PDF
diode Marking code v3 Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14 Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.	Original	MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64	PDF
V = Device Code Abstract: MC74VHC1G00 Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.	Original	MC74VHC1G00 353/SC V = Device Code	PDF
M6H MARKING sot23 Abstract: MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD353LT3G MMBD354LT1 Text: MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236 CASE 318 2 Features	Original	MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 OT-23 O-236) MMBD352LT1 MMBD353LT1 MMBD354LT1 M6H MARKING sot23 MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD353LT3G MMBD354LT1	PDF
Wafer Fab Plant Codes ST Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08 Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer	Original	MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08	PDF
V = Device Code Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE Text: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining	Original	MC74VHC1GT32 V = Device Code diode Marking code v3 on semi aa sot353 TOREX TOP CODE	PDF
On semiconductor date Code sot-23 Abstract: sot-23 body marking C 1 sot-23 body marking A 4 BC847BLT1G MARKING A1 SOT-23 SOT-23 marking 2F sot-23 body marking A c marking code SOT-23 2F Code sot-23 on semiconductor MARKING 1L SOT-23 Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • COLLECTOR 3 ESD Rating − Machine Model: >400 V Pb−Free Packages are Available	Original	BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 On semiconductor date Code sot-23 sot-23 body marking C 1 sot-23 body marking A 4 BC847BLT1G MARKING A1 SOT-23 SOT-23 marking 2F sot-23 body marking A c marking code SOT-23 2F Code sot-23 on semiconductor MARKING 1L SOT-23	PDF
V = Device Code Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.	Original	MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A	PDF

torex new marking Abstract: TOSHIBA el suffix V = Device Code Text: MC74VHC1G03 2-Input NOR Gate with Open Drain Output The MC74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low	Original	MC74VHC1G03 torex new marking TOSHIBA el suffix V = Device Code	PDF
ON Semiconductor marking Abstract: marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a Text: MC74VHC1GT02 2-Input NOR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT02 is a single gate 2–input NOR fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	MC74VHC1GT02 ON Semiconductor marking marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a	PDF
ON Semiconductor marking Abstract: fairchild marking codes sot-23 SOT-353 MARKING w5 date code marking toshiba Nand M2 MARKING SOT23 MARKING W2 SOT23 sot353 vk sot-353 cf sot-353 on semi marking code sot T138-A Text: MC74VHC1GT00 2-Input NAND Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT00 is a single gate 2–input NAND fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	MC74VHC1GT00 ON Semiconductor marking fairchild marking codes sot-23 SOT-353 MARKING w5 date code marking toshiba Nand M2 MARKING SOT23 MARKING W2 SOT23 sot353 vk sot-353 cf sot-353 on semi marking code sot T138-A	PDF
ON Semiconductor marking Abstract: marking VU sot363 V = Device Code SOT23 "Marking Code" t04 ON TSOP6 MARKING 6L marking 62 ON Semi VM MARKING CODE SOT353 marking code V6 diode Text: MC74VHC1GT86 2-Input Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky	Original	MC74VHC1GT86 ON Semiconductor marking marking VU sot363 V = Device Code SOT23 "Marking Code" t04 ON TSOP6 MARKING 6L marking 62 ON Semi VM MARKING CODE SOT353 marking code V6 diode	PDF
SOT-353 MARKING VL Abstract: No abstract text available Text: MC74VHC1G125 Noninverting 3-State Buffer The MC74VHC1G125 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	MC74VHC1G125 SOT-353 MARKING VL	PDF
wz 74 marking Abstract: t138a V = Device Code Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer	Original	MC74HC1G02 MC74HC 353/SC wz 74 marking t138a V = Device Code	PDF
marking t132 Abstract: marking code V6 diode MC74VHC1G08 V = Device Code Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.	Original	MC74VHC1G08 353/SC marking t132 marking code V6 diode V = Device Code	PDF
vsop8 package outline Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc Text: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.	Original	MC74VHC1G09 vsop8 package outline vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc	PDF
H2D MARKING CODE Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3 Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer	Original	MC74HC1G08 MC74HC 353/SC H2D MARKING CODE marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3	PDF
PC 74 HCT 32 P Abstract: U-046 V = Device Code Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low	Original	MC74VHC1G01 PC 74 HCT 32 P U-046 V = Device Code	PDF

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SOT-23 MARKING CODE Y1 Search Results

SOT-23 MARKING CODE Y1 Result Highlights (5)

SOT-23 MARKING CODE Y1 Datasheets Context Search

M8050

M8050

Y1 SOT-23

triode sot23

V = Device Code

marking CODE W2D

V = Device Code

diode Marking code v3

V = Device Code

M6H MARKING sot23

Wafer Fab Plant Codes ST

V = Device Code

On semiconductor date Code sot-23

V = Device Code

torex new marking

ON Semiconductor marking

ON Semiconductor marking

ON Semiconductor marking

SOT-353 MARKING VL

wz 74 marking

marking t132

vsop8 package outline

H2D MARKING CODE

PC 74 HCT 32 P