f3 diode sot23
Abstract: marking code F3 diode MARKING F3 marking f3 sot-23
Text: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM
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MMBD193
OT-23
100mA
f3 diode sot23
marking code F3
diode MARKING F3
marking f3 sot-23
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marking code F3
Abstract: diode MARKING F3
Text: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM
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MMBD193
OT-23
100mA
marking code F3
diode MARKING F3
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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NUF2230XV6
Abstract: NUF2230XV6T1 NUF2230XV6T1G
Text: NUF2230XV6 2 Line EMI Filter with ESD Protection This device is a 2 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 900 MHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all
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NUF2230XV6
IEC61000-4-2
OT-563
NUF2230XV6/D
NUF2230XV6
NUF2230XV6T1
NUF2230XV6T1G
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Untitled
Abstract: No abstract text available
Text: NUF2230XV6 2 Line EMI Filter with ESD Protection This device is a 2 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 900 MHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all
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NUF2230XV6
IEC61000â
NUF2230XV6/D
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PIN-6D
Abstract: No abstract text available
Text: NUF2230XV6 2 Line EMI Filter with ESD Protection This device is a 2 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 900 MHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all
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NUF2230XV6
IEC61000-4-2
OT-563
NUF2230XV6/D
PIN-6D
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Untitled
Abstract: No abstract text available
Text: NUF2230XV6 2 Line EMI Filter with ESD Protection This device is a 2 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 900 MHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all
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NUF2230XV6
IEC61000-4-2
OT-563
NUF2230XV6/D
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NUF2230XV6
Abstract: NUF2230XV6T1 marking code sot563
Text: NUF2230XV6 2 Line EMI Filter with ESD Protection This device is a 2 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 900 MHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all
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NUF2230XV6
IEC61000-4-2
OT-563
NUF2230XV6/D
NUF2230XV6
NUF2230XV6T1
marking code sot563
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Untitled
Abstract: No abstract text available
Text: NCP4624 150 mA, Wide Input Range, LDO Linear Voltage Regulator The NCP4624 is a CMOS 150 mA LDO linear voltage regulator which features high input voltage range while maintaining low quiescent current 2 mA typically. Several protection features like Current Limiting and Reverse Current Protection Circuit are fully
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NCP4624
NCP4624
NCP4624/D
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ncp4624
Abstract: ncp46 NCP4624DSN12T1G
Text: NCP4624 150 mA, Wide Input Range, LDO Linear Voltage Regulator The NCP4624 is a CMOS 150 mA LDO linear voltage regulator which features high input voltage range while maintaining low quiescent current 2 mA typically. Several protection features like Current Limiting and Reverse Current Protection Circuit are fully
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NCP4624
OT-23-5
NCP4624/D
ncp46
NCP4624DSN12T1G
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Untitled
Abstract: No abstract text available
Text: NCP4624 150 mA, Wide Input Range, LDO Linear Voltage Regulator The NCP4624 is a CMOS 150 mA LDO linear voltage regulator which features high input voltage range while maintaining low quiescent current 2 mA typically. Several protection features like Current Limiting and Reverse Current Protection Circuit are fully
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NCP4624
OT-23-5
NCP4624/D
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NCP582DXV29T2G
Abstract: basic ac motor reverse forward electrical diagram F28D marking code PB marking code SJ onsemi onsemi sj SF 829 B 419C NCP582 NCP582DSQ15T1G
Text: NCP582 Ultra−Fast, Low Noise 150 mA CMOS LDO Regulator with Enable The NCP582 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy, low quiescent current, and high ripple rejection.
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NCP582
NCP582
NCP582/D
NCP582DXV29T2G
basic ac motor reverse forward electrical diagram
F28D
marking code PB
marking code SJ onsemi
onsemi sj
SF 829 B
419C
NCP582DSQ15T1G
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F28D
Abstract: No abstract text available
Text: NCP582 Ultra−Fast, Low Noise 150 mA CMOS LDO Regulator with Enable The NCP582 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy, low quiescent current, and high ripple rejection.
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NCP582
SC-82AB
NCP582/D
F28D
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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PU10015EJ04V0PF
transistor marking T79 ghz
marking code C1H mmic
marking code C3E SOT-89
upb1507
marking code C1G mmic
marking code C1E mmic
data book transistors 2SA
uPC2712
pc3215
transistor 2SA data book
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DEVICE MARKING CODE RJ 07
Abstract: marking F3 SC-70 marking code 18 surface mount diode marking code f4 DIODE agilent model marking code AN1124 marking code tc sot 363 marking f3 sot-23 marking L2 package SOT sc-70 package pcb layout
Text: Surface Mount PIN Diodes Technical Data HSMP-386x Series Features • Switching – Low Distortion Switching – Low Capacitance • Attenuating – Low Current Attenuating for Less Power Consumption • Matched Diodes for Consistent Performance • Better Thermal
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HSMP-386x
OT-363
5968-7687E
DEVICE MARKING CODE RJ 07
marking F3 SC-70
marking code 18 surface mount diode
marking code f4 DIODE
agilent model marking code
AN1124
marking code tc sot 363
marking f3 sot-23
marking L2 package SOT
sc-70 package pcb layout
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F33A
Abstract: F15D
Text: NCP582 Low Noise 150 mA LDO Regulator The NCP582 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy, low supply current, and high ripple rejection. These devices feature an enable function and are offered in active
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NCP582
SC-82AB
NCP582/D
F33A
F15D
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F28D
Abstract: 419C NCP582 NCP582DSQ15T1G NCP582DSQ18T1G NCP582DSQ25T1G NCP582DSQ28T1G NCP582DSQ30T1G NCP582DSQ33T1G
Text: NCP582 Low Noise 150 mA LDO Regulator The NCP582 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy, low supply current, and high ripple rejection. These devices feature an enable function and are offered in active
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NCP582
NCP582
SC-82AB
NCP582/D
F28D
419C
NCP582DSQ15T1G
NCP582DSQ18T1G
NCP582DSQ25T1G
NCP582DSQ28T1G
NCP582DSQ30T1G
NCP582DSQ33T1G
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F28D
Abstract: 419C NCP582 NCP582DSQ15T1G NCP582DSQ18T1G NCP582DSQ25T1G NCP582DSQ28T1G NCP582DSQ30T1G NCP582DSQ33T1G F25d
Text: NCP582 Low Noise 150 mA CMOS LDO Regulator with Enable The NCP582 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy, low supply current, and high ripple rejection. These devices feature an enable function and are offered in active
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NCP582
NCP582
SC-82AB
NCP582/D
F28D
419C
NCP582DSQ15T1G
NCP582DSQ18T1G
NCP582DSQ25T1G
NCP582DSQ28T1G
NCP582DSQ30T1G
NCP582DSQ33T1G
F25d
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Untitled
Abstract: No abstract text available
Text: NCP582 Low Noise 150 mA CMOS LDO Regulator with Enable The NCP582 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy, low supply current, and high ripple rejection. These devices feature an enable function and are offered in active
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NCP582
SC-82AB
NCP582/D
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4xxxm
Abstract: NCP582DSQ18T1G
Text: NCP582 Low Noise 150 mA CMOS LDO Regulator with Enable The NCP582 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy, low supply current, and high ripple rejection. These devices feature an enable function and are offered in active
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NCP582
SC-82AB
NCP582/D
4xxxm
NCP582DSQ18T1G
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transistor Bc 542
Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
Text: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times
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33-r2
a75ttti
DIN41
T0126
15A3DIN
transistor Bc 542
transistor BC 56
transistor bc 144
bc 147 transistor
BUT 11 Transistor
transistor BC 147
transistor bc 146
c 2665 transistor
BUT56
FC4A
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transistor BC 575
Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
Text: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB
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569-GS
transistor BC 575
BC 194 TRANSISTORS
transistor bf 196
transistor bf 194 b
BF 194 transistor
transistor bf 195
77 ic marking code
BF 194 npn transistor
6520* transistor
BFY90
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CF-400
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC aie T> a ^ O O S b GDDS3b7^ 3 • AL66 CF 400 m i » ! » electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 G Hz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with
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